2SK2053-AY [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,5A I(D),TO-243VAR;
| 型号： | 2SK2053-AY |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,5A I(D),TO-243VAR |
| 文件： | 总7页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2053
N-CHANNEL MOSFET
FOR HIGH-SPEED SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK2053 is an N-channel vertical MOS FET. Because it
can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
5.7 0.ꢀ
2.0 0.2
ꢀ.5 0.ꢀ
FEATURES
ꢀ
3
• New package intermediate between small signal and power
types
0.85
0.ꢀ
0.5
0.5 0.ꢀ
0.4 0.05
2.ꢀ
• Gate can be driven by 1.5 V
• Low ON resistance
ꢀ. Source
2. Drain
3. Gate
4.2
RDS(on) = 0.40 Ω MAX. (VGS = 1.5 V, ID = 0.5 A)
RDS(on) = 0.12 Ω MAX. (VGS = 4.0 V, ID = 2.5 A)
ORDERING INFORMATION
PART NUMBER
2SK2053
PACKAG
SC-84
Marking: NA1
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATITA = 25°C)
Drain to Source Voltage (VGS
Gate to Source Voltage (V)
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation Note2
Channel Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
16
±7.0
V
V
Drain
±5.0
A
Body
Diode
±10.0
2.0
A
Gate
W
°C
°C
Tch
150
Gate
Protection
Diode
Storage Temperature
Tstg
−55 to +150
Source
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic substrate of 7.5 cm2 x 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D11224EJ3V0DS00 (3rd edition)
Date Published November 2005 NS CP(K)
Printed in Japan
1996
2SK2053
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
VDS = 16 V, VGS = 0 V
MIN.
TYP.
0.8
MAX.
1.0
UNIT
μA
μA
V
IDSS
IGSS
VGS = 7.0 V, VDS = 0 V
VDS = 3 V, ID = 1 mA
VDS = 3 V, ID = 2.5 A
VGS = 1.5 V, ID = 0.5 A
VGS = 2.5 V, ID = 2.5 A
VGS = 4.0 V, ID = 2.5 A
VDS = 3 V
3.0
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
0.5
4
1.1
Note
Forward Transfer Admittance
S
Note
Drain to Source On-state Resistance
0.19
0.08
0.06
730
640
230
85
0.40
0.15
0.12
Ω
Ω
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
Coss
VGS = 0 V
Crss
f = 1 MHz
td(on)
VDD = 3 V, ID = 2.5 A
VGS = 3 V
tr
450
280
310
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS
R
L
90%
V
GS
GS
ꢀ
Wave Form
0
RG
PG.
V
DD
90%
90%
ꢀ0%
I
D
V
0
GS
ꢀ0%
I
0
m
t
d(on)
t
r
t
d(off)
t
f
τ
t
on
t
off
μ
τ = ꢀ
s
Duty Cycle ≤ ꢀ%
2
Data Sheet D11224EJ3V0DS
2SK2053
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
ꢀ00
FORWARD BIAS SAFE OPERATING AREA
ꢀ0
5
80
60
40
20
2
ꢀ
0.5
0.2
0.ꢀ
Single
pulse
ꢀ
2
ꢀ0
20
50
ꢀ00
0
30
60
90
ꢀ20
ꢀ50
V
Do Source Voltage - V
TA
- Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ANSFER CHARACTERISTICS
5
ꢀ
ꢀ
= 3 V
4
3
2
ꢀ
TA = 75 ˚C
0.ꢀ
25 ˚C
–25˚C
0.0ꢀ
0.00ꢀ
0
0.2
0.
.6
0.8
ꢀ.0
0
0.5
ꢀ
ꢀ.5
2
2.5
V
DS - Drarce Voltage - V
VGS - Gate to Source Voltage - V
FORWANSFER ADMITTANCE vs.
DRAIN RENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ꢀ0
0.7
0.6
0.5
0.4
0.3
0.2
0.ꢀ
0
V
GS = ꢀ.5 V
V
DS = 3 V
3
ꢀ
T = –25 ˚C
A
25 ˚C
75 ˚C
0.3
0.ꢀ
T
A
= 75 ˚C
25 ˚C
0.03
0.0ꢀ
–25 ˚C
0.00ꢀ 0.003
0.0ꢀ 0.03
0.ꢀ
0.3
ꢀ
0.0ꢀ 0.03
0.ꢀ
0.3
ꢀ
3
ꢀ0
ID
- Drain Current - A
I
D
- Drain Current - A
3
Data Sheet D11224EJ3V0DS
2SK2053
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.7
0.6
0.5
0.4
0.3
0.2
0.ꢀ
0
0.7
0.6
0.5
0.4
0.3
0.2
0.ꢀ
0
V
GS = 2.5 V
VGS = 4.0 V
T
A
= 75 ˚C
25 ˚C
–25 ˚C
T
A
= 75 ˚C
25 ˚C
–25 ˚C
0.0ꢀ 0.03
0.ꢀ
0.3
ꢀ
3
ꢀ0
0.0ꢀ 0.03
0.ꢀ
ꢀ
3
ꢀ0
ID
- Drain Current - A
ID
- rrent - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
TO DRAIN DIODE
ARD VOLTAGE
0.5
0.4
0.3
0.2
0.ꢀ
ꢀ0
0.ꢀ
I
D
= ꢀ A, 2.5 A
5 A
0.0ꢀ
0.00ꢀ
0
2
6
0.2
0.4
0.6
0.8
ꢀ.0
ꢀ.2
V
GS - Gate to Sltage - V
VSD - Source to Drain Voltage - V
CAPACvs.
DRAIURCE VOLTAGE
SWITCHING CHARACTERISTICS
ꢀ 000
ꢀ 000
500
C
C
iss
tr
500
tf
oss
t
d(off)
200
ꢀ00
50
200
ꢀ00
C
rss
td(on)
50
20
ꢀ0
20
ꢀ0
V
V
DD = 3 V
GS(on) = 3 V
V
GS = 0
f = ꢀ MHz
ꢀ
2
5
ꢀ0
20
50
ꢀ00
0.ꢀ
0.2
0.5
ꢀ
2
5
ꢀ0
VDS - Drain to Source Voltage - V
ID
- Drain Current - A
4
Data Sheet D11224EJ3V0DS
2SK2053
•
The information in this document is current as of November, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an Nlectronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by ans without the prior
written consent of NEC Electronics. NEC Electronics assumes no responor any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of paopyrights or other intellectual
property rights of third parties by or arising from the use of NEC Elecproducts listed in this document
or any other liability arising from the use of such products. Ne, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual propertof NEC Electronics or others.
Descriptions of circuits, software and other related informatis document are provided for illustrative
purposes in semiconductor product operation and apn examples. The incorporation of these
circuits, software and information in the design of a er's equipment shall be done under the full
responsibility of the customer. NEC Electronics ano responsibility for any losses incurred by
customers or third parties arising from the use of rcuits, software and information.
•
• While NEC Electronics endeavors to enhance lity, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the ity of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property (including death) to persons arising from defects in NEC
Electronics products, customers muporate sufficient safety measures in their design, such as
redundancy, fire-containment and are features.
• NEC Electronics products are cd into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality graies only to NEC Electronics products developed based on a customer-
designated "quality assurogram" for a specific application. The recommended applications of an NEC
Electronics product dn its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronuct before using it in a particular application.
"Standard": Comps, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(ꢀ)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. ꢀꢀ-ꢀ
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