2SK1485-T1 [NEC]
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD, SC-62, 3 PIN;
| 型号： | 2SK1485-T1 |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD, SC-62, 3 PIN 开关 晶体管 |
| 文件： | 总8页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1485
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
The 2SK1485, N-channel vertical type MOS FET is a switching device
which can be driven directly by the output of ICs having a 5 V power source.
As the MOS FET has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors, relays,
and solenoids.
4.5 ± 0.1
1.5 ± 0.1
1.6 ± 0.2
2
1
3
0.42
±0.06
0.42
±0.06
0.47
±0.06
3.0
1.5
FEATURES
+0.03
0.41
–0.05
• Directly driven by ICs having a 5 V power source.
• Low on-state resistance
1.Source
2.Drain
3.Gate
DS(on)1
GS
D
R
R
= 1.2 Ω MAX. (V = 4.0 V, I = 0.5 A)
DS(on)2
GS
D
= 0.8 Ω MAX. (V = 10 V, I = 0.5 A)
MARK : NC
• Complementary to 2SJ199.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
GS
DSS
Drain to Source Voltage (V = 0 V)
V
V
100
V
V
EQUIVALENT CIRCUIT
DS
GSS
Gate to Source Voltage (V = 0 V)
±20
Drain
★
C
D(DC)
Drain Current (DC) (T = 25°C)
I
±1.0
±2.0
A
A
Drain Current (pulse) Note1
D(pulse)
I
Body
Diode
Note2
Gate
A
Total Power Dissipation (T = 25°C)
T
P
2.0
W
°C
°C
ch
Channel Temperature
Storage Temperature
T
150
Gate
Protection
Diode
stg
T
−55 to +150
Source
Notes1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic board of 16 cm2 × 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
(Previous No. TC-2349)
D15680EJ3V0DS00 (3rd edition)
1991, 2001
©
The mark ★ shows major revised points.
Date Published July 2001 NS CP(K)
Printed in Japan
2SK1485
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
VDS = 100 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 0.5 A
VGS = 4.0 V, ID = 0.5 A
VGS = 10 V, ID = 0.5 A
VDS = 10 V
MIN.
TYP.
1.2
MAX.
10
UNIT
IDSS
µA
µA
V
IGSS
±10
2.0
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
0.8
0.4
Forward Transfer Admittance
Drain to Source On-state Resistance
S
0.6
0.5
230
80
1.2
0.8
Ω
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
Coss
VGS = 0 V
Crss
f = 1 MHz
12
td(on)
VDD = 25 V, ID = 0.5 A
VGS = 10 V
14
tr
14
Turn-off Delay Time
Fall Time
td(off)
370
65
RG = 10 Ω
tf
SWITCHING TIME
D.U.T.
VGS
RL
90%
VGS
VGS
10%
Wave Form
0
RG
PG.
VDD
90%
90%
ID
ID
VGS
0
10%
10%
ID
0
Wave Form
t
r
t
d(on)
t
d(off)
t
f
τ
t
on
toff
τ = 1
µs
Duty Cycle ≤ 1%
2
Data Sheet D15680EJ3V0DS
2SK1485
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
4
I
D(pulse)
100
80
I
D(DC)
1
0.3
60
40
0.1
0.03
T
A
= 25°C
20
0
Single Pulse
0.01
1
3
10
30
100
300
1000
0
20
40
60
80 100 120 140 160
V
DS - Drain to Source Voltage - V
T
C
- Case Temperature - °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT VS.
DRAIN TO SOURCE VOLTAGE
2.4
600
500
400
Pulsed
mounted on ceramic
board of 16 cm × 0.7 mm
2.5 V
2
2.0
1.6
1.2
0.8
0.4
0
300
200
100
0
V
GS = 2.0 V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
30
60
90
120 150 180
VDS - Drain to Source Voltage - V
T
A
- Ambient Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TRANSFER CHARACTERISTICS
8.0
3.0
3
1
V
DS = 10 V
V
DS = 10 V
f = 1MH
Z
Pulsed
1.0
0.3
0.1
0.1
0.01
0.03
0.001
0
1.0
2.0
3.0
0.004 0.01
0.03
0.1
0.3
1
2
I
D
- Drain Current - A
VGS - Gate to Source Voltage - V
3
Data Sheet D15680EJ3V0DS
2SK1485
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.1
I
D
= 0.5 A
Pulsed
0.9
0.7
0.5
0.3
0.1
Pulsed
0.9
0.7
0.5
V
GS = 4 V
VGS = 10 V
0.3
0.1
0
4
8
12
16
20
0.1
0.3
1
3
V
GS - Gate to Source Voltage -
V
I
D
- Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
600
300
800
300
V
GS = 0 V
td(off)
f = 1 MH
Z
Ciss
100
100
50
tf
50
30
Coss
20
10
td(on)
tr
10
Crss
5
3
5
3
V
V
R
DD = 25 V
GS = 10 V
G = 10 Ω
0.2
1
3
10
30
100 200
0.03
0.1
0.3
1
3
10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
GS
=
0 V
1.4
1.2
1.0
0.8
0.6
0.4
Pulsed
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD - Source to Drain Voltage - V
4
Data Sheet D15680EJ3V0DS
2SK1485
[MEMO]
5
Data Sheet D15680EJ3V0DS
2SK1485
[MEMO]
6
Data Sheet D15680EJ3V0DS
2SK1485
[MEMO]
7
Data Sheet D15680EJ3V0DS
2SK1485
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 00. 4
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