2SK1489_06
更新时间：2024-09-18 06:34:47
品牌：TOSHIBA
描述：N CHANNEL MOS TYPE (CHOPPER REGULATOR, HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
概述
数据手册2SK1489_06 概述
N CHANNEL MOS TYPE (CHOPPER REGULATOR, HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS N沟道MOS型（斩波稳压器，高速，大电流开关应用
2SK1489_06 数据手册
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PDF下载2SK1489
.5
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII )
2SK1489
Chopper Regulator Applications
Unit: mm
z Low drain−source ON resistance
z High forward transfer admittance
: R
= 0.8 Ω (typ.)
DS (ON)
: |Y | = 6.0 S (typ.)
fs
z Low leakage current
z Enhancement mode
: I
= 300 μA (max) (V
= 800 V)
DSS
DS
: V = 1.5~3.5 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
1000
1000
±30
V
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
JEDEC
JEITA
―
―
DC (Note 1)
Pulse (Note 1)
I
12
D
Drain current
A
I
36
DP
Drain power dissipation (Tc = 25°C)
Channel temperature
P
200
W
°C
°C
D
ch
stg
TOSHIBA
2-21F1B
T
150
Weight: 9.75 g (typ.)
Storage temperature range
T
−55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
0.625
35.7
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
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2006-11-09
2SK1489
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
V
V
= ±25 V, V = 0 V
—
—
—
—
±100
300
—
nA
μA
V
GSS
GS
DS
DS
Drain cut−off current
I
= 800 V, V
= 0 V
DSS
(BR) DSS
GS
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
1000
1.5
—
—
D
GS
V
V
V
V
= 10 V, I = 1 mA
—
3.5
1.0
—
V
th
DS
GS
DS
D
R
= 10 V, I = 6 A
0.8
6.0
2000
220
360
Ω
DS (ON)
|Y |
D
= 20 V, I = 6 A
4.0
—
S
fs
D
C
C
—
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
—
oss
Rise time
t
—
—
—
100
140
150
—
—
—
r
Turn−on time
Switching time
t
on
ns
Fall time
t
f
Turn−off time
t
—
—
500
110
—
—
off
Total gate charge (Gate–source
plus gate–drain)
Q
g
V
≈ 400 V, V
= 10 V, I = 12 A
nC
DD
GS
D
Gate−source charge
Q
—
—
50
60
—
—
gs
Gate−drain (“miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
—
Typ.
—
Max
12
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
—
—
36
A
V
DRP
Forward voltage (diode)
V
I
= 12 A, V = 0 V
GS
−1.6
DSF
DR
Marking
Part No. (or abbreviation code)
Lot No.
TOSHIBA
2SK1489
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2006-11-09
2SK1489
3
2006-11-09
2SK1489
4
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2SK1489
5
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2SK1489
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-09
2SK1489_06 相关器件
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| 2SK1493-Z | RENESAS | 3A, 450V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, 3 PIN | 获取价格 |
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| 2SK1494 | RENESAS | 3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PACKAGE-3 | 获取价格 |
|
| 2SK1494-Z | RENESAS | 3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, 3 PIN | 获取价格 |
|
| 2SK1494-Z | NEC | Power Field-Effect Transistor, 3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | 获取价格 |
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