2SJ603-ZJ-AZ [NEC]
Power Field-Effect Transistor, 25A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN;
| 型号： | 2SJ603-ZJ-AZ |
| 厂家： | 
NEC |
| 描述： | Power Field-Effect Transistor, 25A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN 晶体 晶体管 开关 脉冲 局域网 |
| 文件： | 总8页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING
P-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
PART NUMBER
2SJ603
PACKAGE
TO-220AB
TO-262
2SJ603-S
FEATURES
2SJ603-ZJ
TO-263
• Super low on-state resistance:
RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A)
RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A)
• Low input capacitance:
Note
TO-220SMD
2SJ603-Z
Note TO-220SMD package is produced only in
Japan.
Ciss = 1900 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT
−60
V
V
20
25
70
m
m
m
A
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
50
W
PT
1.5
150
W
(TO-262)
Tch
°C
°C
A
Storage Temperature
Single Avalanche Current Note2
Tstg
−55 to +150
−25
IAS
Single Avalanche Energy Note2
EAS
62.5
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published July 2002 NS CP(K)
Printed in Japan
D14648EJ3V0DS00 (3rd edition)
The mark ★ shows major revised points.
2000, 2001
©
2SJ603
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
VDS = −60 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
−10
µA
µA
V
10
m
m
Gate Cut-off Voltage
VDS = −10 V, ID = −1 mA
VDS = −10 V, ID = −13 A
VGS = −10 V, ID = −13 A
VGS = −4.0 V, ID = −13 A
VDS = −10 V
−1.5
−2.0
21
−2.5
Forward Transfer Admittance
Drain to Source On-state Resistance
10
S
38
48
75
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
53
Input Capacitance
1900
350
140
10
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = −30 V, ID = −13 A
VGS = −10 V
11
Turn-off Delay Time
Fall Time
RG = 0 Ω
66
20
Total Gate Charge
QG
VDD = −48 V
38
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = −10 V
7
ID = −25 A
10
IF = 25 A, VGS = 0 V
IF = 25 A, VGS = 0 V
di/dt = 100 A/ µs
1.0
49
ns
nC
Qrr
100
TEST CIRCUIT 2 SWITCHING TIME
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
D.U.T.
L
RG
= 25 Ω
V
GS (−)
R
L
90%
PG.
GS = −20 → 0 V
V
GS
V
GS
10%
VDD
50 Ω
Wave Form
0
RG
V
PG.
V
DD
V
DS (−)
90%
90%
−
BVDSS
V
DS
I
AS
V
GS (−)
10% 10%
d(off)
V
DS
0
V
DS
0
Wave Form
I
D
t
d(on)
t
t
f
t
r
VDD
τ
t
on
t
off
µ
τ = 1 s
Starting Tch
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= −2 mA
RL
PG.
V
DD
50 Ω
2
Data Sheet D14648EJ3V0DS
2SJ603
TYPICAL CHARACTERISTICS (TA = 25°C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
60
50
40
30
20
10
0
100
80
60
40
20
0
0
20
40 60
80 100 120 140 160
20 40
60
80 100 120 140 160
0
T
ch - Channel Temperature - ˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
–100
I
D(pulse)
I
D(DC)
–10
–1
T
C
= 25˚C
Single Pulse
–0.1
–0.1
–1
–10
–100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(j-A) = 83.3˚C/W
10
1
R
th(j-C) = 2.5˚C/W
0.1
Single Pulse
100 1000
0.01
µ
10
1 m
10 m
100 m
1
10
100
µ
PW - Pulse Width - s
3
Data Sheet D14648EJ3V0DS
2SJ603
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
–100
–10
–80
–60
–40
–20
0
V
GS = –10 V
–4.5 V
–4.0 V
–1
T
A
= −55˚C
25˚C
75˚C
125˚C
–0.1
–0.01
V
DS = –10 V
Pulsed
–4
–5
Pulsed
0
–1
–2
–3
–5
–1
–2
–3
–4
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
100
10
Pulsed
80
60
40
20
0
I
D
= –25 A
–13 A
–5 A
T
A
= 125˚C
75˚C
1
25˚C
−55˚C
0.1
VDS = –10 V
Pulsed
0.01
0
–5
–10
–15
–20
–0.01
–0.1
–1
–10
–100
VGS - Gate to Source Voltage - V
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
120
100
80
60
40
20
0
–4.0
–3.0
–2.0
–1.0
0
Pulsed
V
DS = –10 V
I
D
= –1 mA
V
GS = –4.0 V
–4.5 V
–10 V
–0.1
–1
–10
–100
–50
0
50
100
150
ID - Drain Current - A
T
ch - Channel Temperature - ˚C
4
Data Sheet D14648EJ3V0DS
2SJ603
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
–100
–10
Pulsed
Pulsed
GS = –10 V
80
60
40
20
0
V
–4.5V
V
GS = –4.0 V
–4.0 V
–1
0 V
–10 V
–0.1
–0.01
I
D
= –13 A
0
–1.5
100
150
–1.0
–0.5
0
50
−50
V
SD - Source to Drain Voltage - V
T
ch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
100
10
10000
1000
V
V
R
DD = –30 V
GS = –10 V
= 0 Ω
V
GS = 0 V
f = 1 MHz
G
C
iss
t
d(off)
t
f
C
oss
rss
t
d(on)
100
10
C
t
r
1
–0.1
–0.1
–1
–10
–100
–1
–10
–100
ID - Drain Current - A
V
DS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–12
–10
–8
–6
–4
–2
0
1000
100
10
–60
–50
–40
–30
–20
–10
0
di/dt = 100 A/
GS = 0 V
µ
s
I = –25 A
D
V
V
DD = –48 V
–30 V
V
GS
–12 V
VDS
1
0.1
1
10
100
0
5
10
15
20
25
30
35
40
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
5
Data Sheet D14648EJ3V0DS
2SJ603
SINGLE AVALANCHE ENERGY
DERATING FACTOR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
160
140
120
100
80
100
10
V
R
V
DD = –30 V
= 25 Ω
GS = –20 → 0 V
G
I
AS = –25 A
I
AS ≤ –25 A
60
1
40
V
DD = –30V
= 25 Ω
GS = –20 → 0 V
20
R
G
V
0.1
10
0
µ
100
µ
1m
10m
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - ˚C
6
Data Sheet D14648EJ3V0DS
2SJ603
★
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
10.6 MAX.
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.3±0.2
4.8 MAX.
1.3±0.2
φ
3.6±0.2
10 TYP.
10.0 TYP.
4
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
1.Gate
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
2.54 TYP.
2.Drain
3.Source
4.Fin (Drain)
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z) Note
4.8 MAX.
4.8 MAX.
10 TYP.
10 TYP.
4
1.3±0.2
1.3±0.2
4
1
2
3
1
2
3
1.4±0.2
1.4±0.2
0.7±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
0.5±0.2
2.54 TYP.
2.54 TYP.
2.54 TYP.
1.Gate
1.Gate
2.Drain
3.Source
2.Drain
3.Source
4.Fin (Drain)
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Body
Diode
Gate
Gate
Protection
Diode
Source
7
Data Sheet D14648EJ3V0DS
2SJ603
•
The information in this document is current as of July, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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•
•
•
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M8E 00. 4
相关型号：
2SJ604-S-AZ
Power Field-Effect Transistor, 45A I(D), 60V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN
NEC
2SJ604-Z-AZ
Power Field-Effect Transistor, 45A I(D), 60V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN
NEC
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