2SC5431EB-A [NEC]
TRANSISTOR,BJT,NPN,12V V(BR)CEO,60MA I(C),SOT-416VAR;型号: | 2SC5431EB-A |
厂家: | NEC |
描述: | TRANSISTOR,BJT,NPN,12V V(BR)CEO,60MA I(C),SOT-416VAR |
文件: | 总9页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5431
NPN EPITAXIAL SILICON TRANSISTOR
FOR UHF TUNER OSC/MIX
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
•
•
Contains same chip as 2SC5004
Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5431
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
2SC5431-T1
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
20
12
V
3
60
V
mA
mW
°C
°C
P
tot Note
100
Total Power Dissipation
Junction Temperature
Storage Temperature
Tj
125
Tstg
−65 to +125
Note Free air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10099EJ01V0DS (1st edition)
The mark • shows major revised points.
(Previous No. P13075EJ1V0DS00)
Date Published February 2002 CP(K)
Printed in Japan
NEC Corporation 1998
NEC Compound Semiconductor Devices 2002
2SC5431
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Symbol
ICBO
IEBO
Test Conditions
VCB = 15 V, IE = 0 mA
MIN.
–
TYP.
–
MAX.
100
100
0.5
120
–
Unit
nA
nA
V
VEB = 1 V, IC = 0 mA
hFE = 10, IC = 5 mA
–
–
Collector to Emitter Saturation Voltage
DC Current Gain
VCE (sat)
–
–
h
FE Note 1
V
CE
= 5 V, I = 5 mA
C
60
3.0
5.0
–
–
–
Gain Bandwidth Product
Insertion Power Gain
fT
VCE = 5 V, IC = 5 mA, f = 1 GHz
4.3
–
GHz
dB
pF
2
S
21e
V
V
CE
CB
= 5 V, I = 5 mA, f = 1 GHz
C
–
C
re Note 2
= 5 V, I = 0 mA, f = 1 MHz
E
0.6
1.2
Reverse Transfer Capacitance
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
EB
TA
FB
TB
Marking
hFE Value
60 to 90
80 to 120
2
Data Sheet PU10099EJ01V0DS
2SC5431
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
150
125
100
75
1.00
f = 1 MHz
Free Air
0.50
50
0.20
0.10
25
0
25
50
75
100
125
(˚C)
150
1.0
50
1
10
Collector to Base Voltage VCB (V)
100
Ambient Temperature T
A
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
24
16
8
24
16
8
V
CE = 5 V
I
B
= 120
µ
µ
µ
A
100
80
A
A
A
60
µ
µ
µ
40
20
A
A
0
0.2
0.4
0.6
0.8
0
2
4
6
8
10
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
200
100
50
7
6
5
4
3
2
1
0
V
CE = 5 V
VCE = 5 V
f = 1 GHz
20
10
0.5
1
2
5
10
20
1
10
100
Collector Current I (mA)
C
Collector Current I (mA)
C
3
Data Sheet PU10099EJ01V0DS
2SC5431
INSERTION POWER GAIN, MAG
vs. FREQUENCY
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
25
20
15
10
5
14
12
10
8
V
CE = 5 V
V
CE = 5 V
f = 1 GHz
IC = 5 mA
MAG
6
2
|S21e
|
4
2
0
0.1
0
1.0
10.0
1
10
100
Frequency f (GHz)
Collector Current I (mA)
C
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10099EJ01V0DS
2SC5431
S-PARAMETERS
VCE = 3 V, IC = 1 mA, ZO = 50 Ω
Frequency
(GHz)
S11
S21
S21
S21
S12
S12
S12
S22
S22
S22
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0.878
0.699
0.607
0.531
0.477
0.450
0.442
0.427
0.415
0.426
0.450
0.467
0.477
0.492
0.511
−34.4
−64.9
3.225
2.556
2.080
1.791
1.524
1.316
1.184
1.081
0.976
0.883
0.821
0.786
0.741
0.676
0.638
149.4
125.7
107.1
94.8
85.4
76.4
68.0
62.1
56.8
51.5
45.2
40.7
37.9
34.8
29.9
0.076
0.123
0.148
0.154
0.161
0.164
0.163
0.159
0.152
0.148
0.150
0.153
0.161
0.167
0.174
65.6
48.1
37.3
30.0
25.2
23.3
24.6
26.6
28.8
29.8
33.0
37.3
42.2
46.5
50.0
0.939
0.796
0.691
0.647
0.626
0.596
0.567
0.543
0.534
0.526
0.509
0.508
0.527
0.541
0.536
−14.8
−25.3
−34.0
−40.4
−43.9
−46.6
−50.9
−56.5
−62.8
−69.2
−76.5
−86.2
−94.4
−100.8
−107.8
−90.1
−107.9
−123.5
−137.4
−148.0
−157.3
−167.7
−177.6
−175.6
170.7
166.1
161.5
158.0
VCE = 3 V, IC = 3 mA, ZO = 50 Ω
Frequency
(GHz)
S11
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0.707
0.514
0.439
0.391
0.369
0.370
0.374
0.367
0.370
0.390
0.413
0.430
0.444
0.462
0.480
−53.0
−91.3
7.303
5.041
3.754
3.018
2.525
2.132
1.885
1.693
1.506
1.355
1.251
1.189
1.126
1.028
0.964
137.7
113.3
97.8
88.9
82.3
75.2
68.7
64.2
59.8
55.2
49.5
45.0
42.7
39.5
34.6
0.064
0.091
0.102
0.107
0.116
0.125
0.135
0.141
0.148
0.155
0.167
0.180
0.196
0.206
0.214
58.0
43.6
38.9
37.8
38.2
40.2
43.3
46.6
49.4
50.2
50.7
51.9
53.3
54.8
55.2
0.814
0.575
0.457
0.404
0.372
0.343
0.318
0.299
0.289
0.280
0.268
0.272
0.286
0.297
0.303
−27.8
−40.8
−48.1
−52.1
−53.8
−55.5
−59.4
−64.8
−70.7
−77.1
−85.6
−95.6
−104.0
−110.4
−117.3
−116.2
−133.8
−148.6
−159.9
−167.5
−175.1
176.3
168.9
164.3
160.7
157.1
153.8
151.4
VCE = 3 V, IC = 5 mA, ZO = 50 Ω
Frequency
(GHz)
S11
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0.597
0.431
0.375
0.347
0.340
0.348
0.355
0.352
0.359
0.381
0.404
0.421
0.435
0.454
0.472
−65.7
−106.4
−130.0
−146.7
−160.1
−169.5
−175.6
177.6
9.659
6.136
4.420
3.497
2.911
2.441
2.153
1.925
1.706
1.533
1.411
1.343
1.270
1.162
1.088
130.5
107.4
93.7
86.2
80.3
74.2
68.4
64.4
60.4
56.1
50.7
46.6
44.3
41.6
36.6
0.056
0.075
0.086
0.093
0.105
0.116
0.130
0.142
0.152
0.161
0.175
0.191
0.209
0.220
0.227
53.8
44.3
43.7
44.8
47.0
49.1
51.6
54.4
56.4
56.4
55.8
55.7
56.3
57.4
57.0
0.719
0.463
0.354
0.305
0.272
0.246
0.225
0.210
0.200
0.192
0.185
0.191
0.206
0.218
0.228
−35.9
−49.2
−55.6
−58.8
−59.9
−61.7
−66.0
−71.9
−78.5
−86.1
−96.3
−107.2
−115.6
−122.2
−129.3
170.0
163.8
160.0
157.0
153.7
150.8
149.0
5
Data Sheet PU10099EJ01V0DS
2SC5431
VCE = 5 V, IC = 1 mA, ZO = 50 Ω
Frequency
(GHz)
S11
S21
S21
S21
S12
S12
S12
S22
S22
S22
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0.886
0.711
0.616
0.538
0.481
0.448
0.437
0.421
0.407
0.417
0.439
0.455
0.466
0.480
0.499
−32.7
−62.0
3.235
2.597
2.130
1.844
1.577
1.362
1.222
1.116
1.008
0.915
0.849
0.812
0.768
0.701
0.661
150.8
127.7
109.4
97.1
87.9
79.1
70.8
64.9
59.5
54.3
47.8
43.3
40.5
37.4
32.5
0.066
0.109
0.131
0.139
0.145
0.148
0.148
0.144
0.138
0.135
0.138
0.143
0.152
0.159
0.167
66.7
49.9
39.3
32.5
27.7
26.0
27.7
29.8
32.6
34.1
37.8
42.2
47.0
51.8
55.6
0.948
0.821
0.722
0.682
0.666
0.639
0.611
0.584
0.574
0.566
0.550
0.542
0.558
0.573
0.566
−12.9
−22.2
−30.2
−36.4
−39.6
−41.9
−45.7
−50.7
−56.6
−62.5
−69.0
−77.8
−86.0
−92.3
−98.7
−86.9
−104.5
−120.1
−134.2
−145.2
−154.8
−165.5
−175.6
177.1
172.0
167.2
162.4
158.8
VCE = 5 V, IC = 3 mA, ZO = 50 Ω
Frequency
(GHz)
S11
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0.723
0.525
0.444
0.390
0.362
0.359
0.362
0.354
0.356
0.374
0.397
0.414
0.429
0.446
0.465
−49.7
−86.6
7.443
5.234
3.929
3.168
2.663
2.247
1.987
1.784
1.589
1.426
1.316
1.253
1.186
1.083
1.018
139.6
115.4
99.6
90.6
84.0
77.1
70.4
66.0
61.6
57.1
51.3
46.8
44.2
41.4
36.2
0.057
0.082
0.094
0.098
0.106
0.115
0.124
0.131
0.138
0.144
0.155
0.169
0.185
0.196
0.204
60.0
45.9
41.3
39.8
40.3
42.2
45.5
49.1
52.4
53.2
54.2
55.1
56.6
58.6
59.2
0.839
0.617
0.501
0.452
0.424
0.397
0.372
0.349
0.338
0.328
0.315
0.310
0.320
0.329
0.331
−24.0
−35.2
−41.5
−45.1
−46.4
−47.3
−50.3
−54.8
−60.2
−65.8
−72.5
−81.4
−89.7
−96.2
−102.7
−111.6
−129.2
−144.4
−156.6
−164.8
−172.8
178.2
170.5
165.6
162.0
158.2
154.8
152.3
VCE = 5 V, IC = 5 mA, ZO = 50 Ω
Frequency
(GHz)
S11
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0.675
0.550
0.513
0.489
0.487
0.501
0.508
0.498
0.502
0.524
0.545
0.560
0.571
0.585
0.602
−66.0
−108.8
−133.2
−149.5
−162.2
−170.9
−176.5
177.3
10.641
7.098
5.218
4.145
3.458
2.973
2.566
2.279
2.018
1.800
1.645
1.559
1.475
1.337
1.246
135.2
111.6
96.6
88.0
81.6
75.0
69.0
64.7
60.4
56.0
50.1
45.5
43.0
39.9
35.4
0.052
0.074
0.088
0.097
0.108
0.119
0.133
0.143
0.153
0.162
0.176
0.191
0.210
0.222
0.226
57.8
46.8
45.0
45.5
47.9
50.1
52.1
55.0
56.4
56.5
55.6
55.4
56.1
57.1
57.1
0.786
0.546
0.428
0.377
0.345
0.316
0.290
0.269
0.257
0.246
0.233
0.229
0.236
0.239
0.240
−29.4
−41.0
−47.0
−50.1
−50.9
−51.8
−54.8
−59.4
−65.0
−71.1
−78.4
−88.3
−97.3
−104.3
−110.6
169.8
164.0
160.2
156.9
153.6
150.5
148.5
6
Data Sheet PU10099EJ01V0DS
2SC5431
PACKAGE DIMENSIONS
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD (UNIT: mm)
1.2 ± 0.05
0.8 ± 0.1
2
3
1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
7
Data Sheet PU10099EJ01V0DS
2SC5431
•
The information in this document is current as of February, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
8
Data Sheet PU10099EJ01V0DS
2SC5431
Business issue
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0110
相关型号:
2SC5432-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC
2SC5432-EB
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC
2SC5432-EB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC
2SC5432-FB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC
2SC5432-T1
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC
2SC5432-T1-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC
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