2SC5431FB-T1 [NEC]

TRANSISTOR,BJT,NPN,12V V(BR)CEO,60MA I(C),SOT-416VAR;
2SC5431FB-T1
型号: 2SC5431FB-T1
厂家: NEC    NEC
描述:

TRANSISTOR,BJT,NPN,12V V(BR)CEO,60MA I(C),SOT-416VAR

文件: 总9页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5431  
NPN EPITAXIAL SILICON TRANSISTOR  
FOR UHF TUNER OSC/MIX  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Contains same chip as 2SC5004  
Flat-lead 3-pin thin-type ultra super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5431  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (collector) face the perforation side of the tape  
2SC5431-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3
60  
V
mA  
mW  
°C  
°C  
P
tot Note  
100  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
125  
Tstg  
65 to +125  
Note Free air  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10099EJ01V0DS (1st edition)  
The mark shows major revised points.  
(Previous No. P13075EJ1V0DS00)  
Date Published February 2002 CP(K)  
Printed in Japan  
NEC Corporation 1998  
NEC Compound Semiconductor Devices 2002  
2SC5431  
ELECTRICAL CHARACTERISTICS (TA = +25°C)  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Symbol  
ICBO  
IEBO  
Test Conditions  
VCB = 15 V, IE = 0 mA  
MIN.  
TYP.  
MAX.  
100  
100  
0.5  
120  
Unit  
nA  
nA  
V
VEB = 1 V, IC = 0 mA  
hFE = 10, IC = 5 mA  
Collector to Emitter Saturation Voltage  
DC Current Gain  
VCE (sat)  
h
FE Note 1  
V
CE  
= 5 V, I = 5 mA  
C
60  
3.0  
5.0  
Gain Bandwidth Product  
Insertion Power Gain  
fT  
VCE = 5 V, IC = 5 mA, f = 1 GHz  
4.3  
GHz  
dB  
pF  
2
S
21e  
V
V
CE  
CB  
= 5 V, I = 5 mA, f = 1 GHz  
C
C
re Note 2  
= 5 V, I = 0 mA, f = 1 MHz  
E
0.6  
1.2  
Reverse Transfer Capacitance  
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%  
2. Collector to base capacitance when the emitter grounded  
hFE CLASSIFICATION  
Rank  
EB  
TA  
FB  
TB  
Marking  
hFE Value  
60 to 90  
80 to 120  
2
Data Sheet PU10099EJ01V0DS  
2SC5431  
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
150  
125  
100  
75  
1.00  
f = 1 MHz  
Free Air  
0.50  
50  
0.20  
0.10  
25  
0
25  
50  
75  
100  
125  
(˚C)  
150  
1.0  
50  
1
10  
Collector to Base Voltage VCB (V)  
100  
Ambient Temperature T  
A
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
24  
16  
8
24  
16  
8
V
CE = 5 V  
I
B
= 120  
µ
µ
µ
A
100  
80  
A
A
A
60  
µ
µ
µ
40  
20  
A
A
0
0.2  
0.4  
0.6  
0.8  
0
2
4
6
8
10  
Base to Emitter Voltage VBE (V)  
Collector to Emitter Voltage VCE (V)  
DC CURRENT GAIN vs.  
COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
200  
100  
50  
7
6
5
4
3
2
1
0
V
CE = 5 V  
VCE = 5 V  
f = 1 GHz  
20  
10  
0.5  
1
2
5
10  
20  
1
10  
100  
Collector Current I (mA)  
C
Collector Current I (mA)  
C
3
Data Sheet PU10099EJ01V0DS  
2SC5431  
INSERTION POWER GAIN, MAG  
vs. FREQUENCY  
INSERTION POWER GAIN  
vs. COLLECTOR CURRENT  
25  
20  
15  
10  
5
14  
12  
10  
8
V
CE = 5 V  
V
CE = 5 V  
f = 1 GHz  
IC = 5 mA  
MAG  
6
2
|S21e  
|
4
2
0
0.1  
0
1.0  
10.0  
1
10  
100  
Frequency f (GHz)  
Collector Current I (mA)  
C
Remark The graphs indicate nominal characteristics.  
4
Data Sheet PU10099EJ01V0DS  
2SC5431  
S-PARAMETERS  
VCE = 3 V, IC = 1 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
S21  
S21  
S21  
S12  
S12  
S12  
S22  
S22  
S22  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.878  
0.699  
0.607  
0.531  
0.477  
0.450  
0.442  
0.427  
0.415  
0.426  
0.450  
0.467  
0.477  
0.492  
0.511  
34.4  
64.9  
3.225  
2.556  
2.080  
1.791  
1.524  
1.316  
1.184  
1.081  
0.976  
0.883  
0.821  
0.786  
0.741  
0.676  
0.638  
149.4  
125.7  
107.1  
94.8  
85.4  
76.4  
68.0  
62.1  
56.8  
51.5  
45.2  
40.7  
37.9  
34.8  
29.9  
0.076  
0.123  
0.148  
0.154  
0.161  
0.164  
0.163  
0.159  
0.152  
0.148  
0.150  
0.153  
0.161  
0.167  
0.174  
65.6  
48.1  
37.3  
30.0  
25.2  
23.3  
24.6  
26.6  
28.8  
29.8  
33.0  
37.3  
42.2  
46.5  
50.0  
0.939  
0.796  
0.691  
0.647  
0.626  
0.596  
0.567  
0.543  
0.534  
0.526  
0.509  
0.508  
0.527  
0.541  
0.536  
14.8  
25.3  
34.0  
40.4  
43.9  
46.6  
50.9  
56.5  
62.8  
69.2  
76.5  
86.2  
94.4  
100.8  
107.8  
90.1  
107.9  
123.5  
137.4  
148.0  
157.3  
167.7  
177.6  
175.6  
170.7  
166.1  
161.5  
158.0  
VCE = 3 V, IC = 3 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.707  
0.514  
0.439  
0.391  
0.369  
0.370  
0.374  
0.367  
0.370  
0.390  
0.413  
0.430  
0.444  
0.462  
0.480  
53.0  
91.3  
7.303  
5.041  
3.754  
3.018  
2.525  
2.132  
1.885  
1.693  
1.506  
1.355  
1.251  
1.189  
1.126  
1.028  
0.964  
137.7  
113.3  
97.8  
88.9  
82.3  
75.2  
68.7  
64.2  
59.8  
55.2  
49.5  
45.0  
42.7  
39.5  
34.6  
0.064  
0.091  
0.102  
0.107  
0.116  
0.125  
0.135  
0.141  
0.148  
0.155  
0.167  
0.180  
0.196  
0.206  
0.214  
58.0  
43.6  
38.9  
37.8  
38.2  
40.2  
43.3  
46.6  
49.4  
50.2  
50.7  
51.9  
53.3  
54.8  
55.2  
0.814  
0.575  
0.457  
0.404  
0.372  
0.343  
0.318  
0.299  
0.289  
0.280  
0.268  
0.272  
0.286  
0.297  
0.303  
27.8  
40.8  
48.1  
52.1  
53.8  
55.5  
59.4  
64.8  
70.7  
77.1  
85.6  
95.6  
104.0  
110.4  
117.3  
116.2  
133.8  
148.6  
159.9  
167.5  
175.1  
176.3  
168.9  
164.3  
160.7  
157.1  
153.8  
151.4  
VCE = 3 V, IC = 5 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.597  
0.431  
0.375  
0.347  
0.340  
0.348  
0.355  
0.352  
0.359  
0.381  
0.404  
0.421  
0.435  
0.454  
0.472  
65.7  
106.4  
130.0  
146.7  
160.1  
169.5  
175.6  
177.6  
9.659  
6.136  
4.420  
3.497  
2.911  
2.441  
2.153  
1.925  
1.706  
1.533  
1.411  
1.343  
1.270  
1.162  
1.088  
130.5  
107.4  
93.7  
86.2  
80.3  
74.2  
68.4  
64.4  
60.4  
56.1  
50.7  
46.6  
44.3  
41.6  
36.6  
0.056  
0.075  
0.086  
0.093  
0.105  
0.116  
0.130  
0.142  
0.152  
0.161  
0.175  
0.191  
0.209  
0.220  
0.227  
53.8  
44.3  
43.7  
44.8  
47.0  
49.1  
51.6  
54.4  
56.4  
56.4  
55.8  
55.7  
56.3  
57.4  
57.0  
0.719  
0.463  
0.354  
0.305  
0.272  
0.246  
0.225  
0.210  
0.200  
0.192  
0.185  
0.191  
0.206  
0.218  
0.228  
35.9  
49.2  
55.6  
58.8  
59.9  
61.7  
66.0  
71.9  
78.5  
86.1  
96.3  
107.2  
115.6  
122.2  
129.3  
170.0  
163.8  
160.0  
157.0  
153.7  
150.8  
149.0  
5
Data Sheet PU10099EJ01V0DS  
2SC5431  
VCE = 5 V, IC = 1 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
S21  
S21  
S21  
S12  
S12  
S12  
S22  
S22  
S22  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.886  
0.711  
0.616  
0.538  
0.481  
0.448  
0.437  
0.421  
0.407  
0.417  
0.439  
0.455  
0.466  
0.480  
0.499  
32.7  
62.0  
3.235  
2.597  
2.130  
1.844  
1.577  
1.362  
1.222  
1.116  
1.008  
0.915  
0.849  
0.812  
0.768  
0.701  
0.661  
150.8  
127.7  
109.4  
97.1  
87.9  
79.1  
70.8  
64.9  
59.5  
54.3  
47.8  
43.3  
40.5  
37.4  
32.5  
0.066  
0.109  
0.131  
0.139  
0.145  
0.148  
0.148  
0.144  
0.138  
0.135  
0.138  
0.143  
0.152  
0.159  
0.167  
66.7  
49.9  
39.3  
32.5  
27.7  
26.0  
27.7  
29.8  
32.6  
34.1  
37.8  
42.2  
47.0  
51.8  
55.6  
0.948  
0.821  
0.722  
0.682  
0.666  
0.639  
0.611  
0.584  
0.574  
0.566  
0.550  
0.542  
0.558  
0.573  
0.566  
12.9  
22.2  
30.2  
36.4  
39.6  
41.9  
45.7  
50.7  
56.6  
62.5  
69.0  
77.8  
86.0  
92.3  
98.7  
86.9  
104.5  
120.1  
134.2  
145.2  
154.8  
165.5  
175.6  
177.1  
172.0  
167.2  
162.4  
158.8  
VCE = 5 V, IC = 3 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.723  
0.525  
0.444  
0.390  
0.362  
0.359  
0.362  
0.354  
0.356  
0.374  
0.397  
0.414  
0.429  
0.446  
0.465  
49.7  
86.6  
7.443  
5.234  
3.929  
3.168  
2.663  
2.247  
1.987  
1.784  
1.589  
1.426  
1.316  
1.253  
1.186  
1.083  
1.018  
139.6  
115.4  
99.6  
90.6  
84.0  
77.1  
70.4  
66.0  
61.6  
57.1  
51.3  
46.8  
44.2  
41.4  
36.2  
0.057  
0.082  
0.094  
0.098  
0.106  
0.115  
0.124  
0.131  
0.138  
0.144  
0.155  
0.169  
0.185  
0.196  
0.204  
60.0  
45.9  
41.3  
39.8  
40.3  
42.2  
45.5  
49.1  
52.4  
53.2  
54.2  
55.1  
56.6  
58.6  
59.2  
0.839  
0.617  
0.501  
0.452  
0.424  
0.397  
0.372  
0.349  
0.338  
0.328  
0.315  
0.310  
0.320  
0.329  
0.331  
24.0  
35.2  
41.5  
45.1  
46.4  
47.3  
50.3  
54.8  
60.2  
65.8  
72.5  
81.4  
89.7  
96.2  
102.7  
111.6  
129.2  
144.4  
156.6  
164.8  
172.8  
178.2  
170.5  
165.6  
162.0  
158.2  
154.8  
152.3  
VCE = 5 V, IC = 5 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.675  
0.550  
0.513  
0.489  
0.487  
0.501  
0.508  
0.498  
0.502  
0.524  
0.545  
0.560  
0.571  
0.585  
0.602  
66.0  
108.8  
133.2  
149.5  
162.2  
170.9  
176.5  
177.3  
10.641  
7.098  
5.218  
4.145  
3.458  
2.973  
2.566  
2.279  
2.018  
1.800  
1.645  
1.559  
1.475  
1.337  
1.246  
135.2  
111.6  
96.6  
88.0  
81.6  
75.0  
69.0  
64.7  
60.4  
56.0  
50.1  
45.5  
43.0  
39.9  
35.4  
0.052  
0.074  
0.088  
0.097  
0.108  
0.119  
0.133  
0.143  
0.153  
0.162  
0.176  
0.191  
0.210  
0.222  
0.226  
57.8  
46.8  
45.0  
45.5  
47.9  
50.1  
52.1  
55.0  
56.4  
56.5  
55.6  
55.4  
56.1  
57.1  
57.1  
0.786  
0.546  
0.428  
0.377  
0.345  
0.316  
0.290  
0.269  
0.257  
0.246  
0.233  
0.229  
0.236  
0.239  
0.240  
29.4  
41.0  
47.0  
50.1  
50.9  
51.8  
54.8  
59.4  
65.0  
71.1  
78.4  
88.3  
97.3  
104.3  
110.6  
169.8  
164.0  
160.2  
156.9  
153.6  
150.5  
148.5  
6
Data Sheet PU10099EJ01V0DS  
2SC5431  
PACKAGE DIMENSIONS  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD (UNIT: mm)  
1.2 ± 0.05  
0.8 ± 0.1  
2
3
1
PIN CONNECTIONS  
1. Emitter  
2. Base  
3. Collector  
7
Data Sheet PU10099EJ01V0DS  
2SC5431  
The information in this document is current as of February, 2002. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.  
and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4-0110  
8
Data Sheet PU10099EJ01V0DS  
2SC5431  
Business issue  
NEC Compound Semiconductor Devices, Ltd.  
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com  
NEC Compound Semiconductor Devices Hong Kong Limited  
Hong Kong Head Office  
Taipei Branch Office  
Korea Branch Office  
TEL: +852-3107-7303  
FAX: +852-3107-7309  
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859  
TEL: +82-2-528-0301  
FAX: +82-2-528-0302  
NEC Electron Devices European Operations  
http://www.nec.de/  
TEL: +49-211-6503-101 FAX: +49-211-6503-487  
California Eastern Laboratories, Inc.  
http://www.cel.com/  
TEL: +1-408-988-3500 FAX: +1-408-988-0279  
Technical issue  
NEC Compound Semiconductor Devices, Ltd.  
http://www.csd-nec.com/  
Sales Engineering Group, Sales Division  
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918  
0110  

相关型号:

2SC5432

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC

2SC5432-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC

2SC5432-EB

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC

2SC5432-EB-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC

2SC5432-FB

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
RENESAS

2SC5432-FB-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC

2SC5432-T1

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC

2SC5432-T1

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
RENESAS

2SC5432-T1-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC

2SC5432-T1-EB

RF SMALL SIGNAL TRANSISTOR
RENESAS

2SC5432-T1-FB

RF SMALL SIGNAL TRANSISTOR
RENESAS