2SC3587 [NEC]
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION; NPN外延硅晶体管微波低噪声放大
| 型号： | 2SC3587 |
| 厂家： | 
NEC |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
| 文件： | 总8页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SC3587
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for low-
PACKAGE DIMENSIONS (in mm)
noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
E
FEATURES
3.8 MIN.
3.8 MIN.
• Low noise
: NF = 1.7 dB TYP. @ f = 2 GHz
NF = 2.6 dB TYP. @ f = 4 GHz
C
B
• High power gain : GA = 12.5 dB TYP. @ f = 2 GHz
GA = 8.0 dB TYP. @ f = 4 GHz
45 °
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
E
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
RATING
UNIT
V
0.5 ± 0.05
2.55 ± 0.2
φ 2.1
20
10
VCEO
V
VEBO
1.5
V
IC
35
mA
mW
°C
Total Power Dissipation
Junction Temperature
Storage Temperature
PT (TC = 25 °C)
Tj
580
200
Tstg
-
65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITIONS
MIN.
TYP.
MAX.
1.0
UNIT
µA
VCB = 10 V
VEB = 1 V
IEBO
1.0
µA
hFE
VCE = 6 V, IC = 10 mA Pulse
VCE = 6 V, IC = 10 mA
VCB = 10 V, f = 1 MHz
VCE = 6 V, IC = 5 mA
50
100
10.0
0.2
250
Gain Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
fT
GHz
pF
Cre
0.7
2.4
NFNote
f = 2 GHz
f = 4 GHz
f = 2 GHz
f = 4 GHz
1.7
dB
dB
dB
dB
dB
dB
dB
2.6
Insertion Gain
|S21e|2
VCE = 6 V, IC = 10 mA
10.5
12.5
7.5
Maximum Available Gain
Power Gain
MAG
VCE = 6 V, IC = 10 mA, f = 4 GHz
VCE = 6 V, IC = 5 mA f = 2 GHz
f = 4 GHz
10
GA
12.5
8.0
Document No. P11673EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
1996
©
2SC3587
Note Test block diagram
Coax. SW
Coax. SW
Transistor
Under
Test
Noise Diode
Post Amp
Mixer
NF Meter
Stub
Tuner
Bias
Tee
Bias
Tee
Network
Analyzer
Coax. SW
*
To test 1 GHz or lower, insert a bandpass filter.
Sweeper
*
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
MAG AND INSERTION GAIN vs.
FREQUENCY
0.8
V
CE = 6 V
= 10 mA
25
IC
MAG
with heat sink
20
15
10
5
0.6
0.4
0.2
R
th(j−e)
90 °C/W
2
|S21e
|
R
th(j−a)
590 °C/W
0
−5
0.1
0
50
100
150
200
0.2
0.5
1
2
5
10
f - Frequency - GHz
T
A
- Ambient Temperature - °C
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
3
2
200
V
CE = 6 V
f = 1.0 MHz
100
50
1
0.7
0.5
0.3
0.2
20
10
0.5
1
5
10
50
0.1
IC
- Collector Current - mA
1
2
3
5
7
10
20
30
V
CB - Collector to Base Voltage -V
2
2SC3587
INSERTION GAIN vs.
COLLECTOR CURRENT
NOISE FIGURE vs. COLLECTOR CURRENT
6
5
4
3
2
15
10
V
CE = 6 V
f = 2 GHz
f = 4 GHz
3 GHz
4 GHz
5
0
f = 2 GHz
V
CE = 6 V
0.5
1
5
10
50 70
1
2
5
10
20
50
IC - Collector Current - mA
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
30
20
VCE = 6 V
10
7
5
3
2
1
2
3
5
7
10
20
30
IC - Collector Current - mA
S PARAMETER
VCE = 6 V, IC = 10 mA, ZO = 50 Ω
f (MHz)
500
|S11|
.466
.322
.271
.256
.262
.270
.294
.327
S11
|S21|
13.209
8.371
5.672
4.304
3.456
3.095
2.595
2.231
S21
120.8
95.7
78.7
66.9
58.6
46.1
35.0
27.6
|S12|
.0288
.0424
.0561
.0697
.0848
.0955
.106
S12
50.9
54.2
54.5
54.1
51.9
48.0
43.2
35.2
|S22|
S22
25.0
29.4
33.5
38.7
46.2
52.8
61.0
68.4
-
82.1
.634
.610
.579
.549
.531
.507
.498
.500
-
-
-
-
-
-
-
-
1000
1500
2000
2500
3000
3500
4000
-
-
-
123.8
153.7
176.6
167.3
152.0
142.0
129.7
.127
3
2SC3587
S PARAMETER
S11e, S22e − FREQUENCY
VCE = 6 V
IC = 10 mA
500 MHz Step
90
100
70
50
O
20
4 GHz
RESTSTANCE COMPONENT
R
ZO
S11e
0.5 GHz
4 GHz
0.5 GHz
S22e
-
3 0
6 0
9 - 0
S21 − FREQUENCY
VCE = 6 V
IC = 10 mA
500 MHz Step
S12 − FREQUENCY
120°
VCE = 6 V
IC = 10 mA
500 MHz Step
90°
90°
120°
0.5 GHz
60°
60°
4 GHz
150°
150°
30°
30°
0.5 GHz
4 GHz
180°
0° 180°
0°
5
10
0.05
0.1
−150°
−30°
−150°
−30°
−120°
−60°
−120°
−60°
−90°
−90°
4
2SC3587
[MEMO]
5
2SC3587
[MEMO]
6
2SC3587
[MEMO]
7
2SC3587
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representative.
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M4 96.5
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