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2SC3588-Z [TYSEMI]

High voltage VCEO=400V Collector to base voltage VCBO 500 V; 高电压VCEO = 400V集电极到基极电压VCBO 500 V
2SC3588-Z
型号： 2SC3588-Z
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

High voltage VCEO=400V Collector to base voltage VCBO 500 V
高电压VCEO = 400V集电极到基极电压VCBO 500 V

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Transistors  
Product specification  
2SC3588-Z  
TO-252  
Unit: mm  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
Features  
High voltage VCEO=400V  
0.127  
max  
0.80+0.1  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current *1  
Collector current  
Symbol  
VCBO  
VCES  
VEBO  
ICP  
Rating  
Unit  
V
500  
400  
V
7
V
1
A
IC  
0.5  
2
A
PT  
W
Total power dissipation  
Junction temperature  
Storage temperature  
TC = 25 *2  
Tj  
150  
Tstg  
-55 to +150  
*1 pw 10ms,Duty cycle 50%  
*2 when mounted on ceramic substrate of 7.5cm2X0.7mm  
Electrical Characteristics Ta = 25  
Parameter  
Collector Cutoff Current  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
Unit  
ìA  
VCB=400V,IE=0  
10  
10  
80  
Emitter Cutoff Current  
IEBO  
VEB=5.0V,IC=0  
ìA  
VCE=5V,IC=50mA  
VCE=5V,IC=300mA  
IC=300mA,IB=60mA  
IC=300mA,IB=60mA  
20  
10  
42  
20  
DC Current Gain *  
hFE  
Collector Saturation Voltage *  
Base Saturation Voltage *  
Turn-on Time  
VCE(sat)  
VBE(sat)  
ton  
0.2  
0.5  
1.0  
1.0  
2.5  
1.0  
V
V
0.85  
0.12  
2.0  
IC=0.3A,RL=500Ù,VCC=150V,  
PW=50ìs,IB1=-IB2=0.06A  
Duty Cycle 2%  
ìs  
Storage Time  
tstg  
Fall Time  
tr  
0.35  
* Pulsed: PW 350ìA,Duty Cycle 2%  
hFE Classification  
Marking  
hFE  
M
L
K
20 to 40  
30 to 60  
40 to 80  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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