2SC3357-T1RH-A [NEC]
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3;型号: | 2SC3357-T1RH-A |
厂家: | NEC |
描述: | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3 放大器 ISM频段 晶体管 |
文件: | 总8页 (文件大小:86K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
FEATURES
•
Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)
Small package : 3-pin power minimold package
•
•
•
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC3357
25 pcs (Non reel)
1 kpcs/reel
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
2SC3357-T1
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
20
12
V
3.0
V
100
mA
W
P
tot Note
1.2
Total Power Dissipation
Junction Temperature
Storage Temperature
Tj
150
°C
°C
Tstg
−65 to +150
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
The mark • shows major revised points.
Date Published January 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1985, 2003
2SC3357
THERMAL RESISTANCE
Parameter
Symbol
Value
62.5
Unit
R
th (j-a) Note
°
C/W
Junction to Ambient Resistance
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
h
VCB = 10 V, IE = 0 mA
VEB = 1.0 V, IC = 0 mA
= 10 V, I = 20 mA
–
–
–
–
1.0
1.0
250
µA
µA
–
FE Note 1
CE
C
V
50
120
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
fT
VCE = 10 V, IC = 20 mA
= 10 V, I = 20 mA, f = 1 GHz
–
–
–
–
–
6.5
9.0
–
–
GHz
dB
2
S
21e
V
CE
C
NF
NF
C
VCE = 10 V, IC = 7 mA, f = 1 GHz
VCE = 10 V, IC = 40 mA, f = 1 GHz
1.1
–
dB
Noise Figure (2)
1.8
3.0
1.0
dB
re Note 2
CB
E
Reverse Transfer Capacitance
V
= 10 V, I = 0 mA, f = 1 MHz
0.65
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal
capacitance bridge.
hFE CLASSIFICATION
Rank
RH
RH
RF
RF
RE
RE
Marking
hFE Value
50 to 100
80 to 160
125 to 250
2
Data Sheet PU10211EJ01V0DS
2SC3357
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
f = 1 MHz
2
1
1
Ceramic substrate
16 cm2 × 0.7 mm (t)
0.5
0.3
Free air Rth (j-a) 312.5˚C/W
0
25
50
75
100
125
(˚C)
150
50
2
0.2
0.5
1
2
5
10
20 30
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
200
100
50
10
5
V
CE = 10 V
V
CE = 10 V
3
2
1
0.5
20
10
0.3
0.2
0.1
0.1
0.5
1
5
10
(mA)
0.5
1
5
10
(mA)
50 100
Collector Current I
C
Collector Current I
C
INSERTION POWER GAIN, MAG
vs. FREQUENCY
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
25
20
15
10
15
10
VCE = 10 V
MAG
f = 1 GHz
2
|S21e
|
5
0
5
0
VCE = 10 V
I
C
= 20 mA
0.05
0.1
0.2
0.5
1
0.5
1
5
10
50 70
Frequency f (GHz)
Collector Current I
C
(mA)
3
Data Sheet PU10211EJ01V0DS
2SC3357
NOISE FIGURE vs.
COLLECTOR CURRENT
IM
2
, IM vs. COLLECTOR CURRENT
3
7
6
5
4
3
2
1
100
90
80
70
60
50
V
CE = 10 V
= 100 dB
= R
V
CE = 10 V
V
o
µV/50 Ω
f = 1 GHz
R
IM
IM
g
e
= 50 Ω
2
: f = 90 + 100 MHz
3
: f = 2 × 200 – 190 MHz
IM
3
IM
2
40
30
0
0.5
1
5
10
50 70
20
30
40
50
60
(mA)
70
Collector Current I
C
(mA)
Collector Current I
C
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10211EJ01V0DS
2SC3357
SMITH CHART
S11e, S22e-FREQUENCY
CONDITION : VCE = 10 V
0.15
0.35
0.10
0.40
90
110
60
1.4
120
130
2.0
0.20
T
N
E
0.30
N
O
0.05
140
0 . 3
M
0.45
CO
C
N
A
T
C
A
E
O
R
4.0
E
V
I
T
I
20
OS
P
f = 20 GHz
S
11e
50
REACTANCE COMPONENT
: I
: I
C
C
= 20 mA
= 40 mA
R
––––
0.2
(
)
Z
O
f = 0.2 GHz
f = 2.0 GHz
0.4
f = 0.2 GHz
S
22e
−
2 0
0.2
T
N
E
N
O
P
O M
−
3 0
C
E
C
N
A
T
3 . 0
E
R
−
4 0
T
0 . 0 5
A
1 4 0
G
−
0 . 4 5
N E
−
5 0
1 3 0
−
0.7
1 1 0
−
9 − 0
S21e-FREQUENCY
S12e-FREQUENCY
CONDITION : VCE = 10 V, I
C
= 20 mA
CONDITION : VCE = 10 V, I
C
= 20 mA
90˚
90˚
120˚
120˚
60˚
60˚
f = 0.2 GHz
f = 2.0 GHz
S
21e
150˚
30˚
150˚
30˚
S
12e
f = 2.0 GHz
f = 0.2 GHz
180˚
0˚ 180˚
0˚
3
6
9
12 15
0.1
0.2
0.3 0.4 0.5
–150˚
–30˚
–150˚
–30˚
–60˚
–60˚
–120˚
–120˚
–90˚
–90˚
5
Data Sheet PU10211EJ01V0DS
2SC3357
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
1.6±0.2
1.5±0.1
C
E
B
+0.03
–0.06
0.41
0.42±0.06
0.42±0.06
0.47±0.06
1.5
3.0
PIN CONNECTIONS
E : Emitter
C : Collector (Fin)
B : Base
(IEC : SOT-89)
6
Data Sheet PU10211EJ01V0DS
2SC3357
•
The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 00. 4-0110
7
Data Sheet PU10211EJ01V0DS
2SC3357
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