2SC3357E [SHIKUES]
NPN SILICON RF TRANSISTOR;
| 型号： | 2SC3357E |
| 厂家： | 
SHIKUES Electronics |
| 描述： | NPN SILICON RF TRANSISTOR |
| 文件： | 总3页 (文件大小：575K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC3357
NPN SILICON RF TRANSISTOR
Feature
High gain:︱S21e︱2 TYP. Value is 10dB
@ VCE=10V，IC=20mA，f=1GHz
Low noise: NF
fT (TYP.) :
TYP. Value is 1.7dB
TYP. Value is 6.5GHz
@ VCE=10V，IC=7mA，f=1GHz
@ VCE=10V，IC=20mA，f=1GHz
PIN DEFINITION:
1：（Base） 2：（Collector） 3：（Emitter）
SOT-89
Absolute Maximum Ratings TA=25℃ Unless Otherwise noted
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector current
SYMBLE
VCBO
VCEO
VEBO
IC
MAXIMUM VALUE
UNIT
V
20
12
V
3
V
100
mA
W
*Collector Power Dissipation
Junction Temperature
*PD
1.2
Tj
150
℃
℃
Storage Temperature
Tstg
-65 ~ +150
*With heat dissipation panel
hFE Classification
A
B
C
D
RE
E
Classification
Marking
RH
RF
60~100
90~140
130~180
170~250
250~300
hFE
REV.08
1 of 3
2SC3357
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector- Emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
SYMBLE MIN. TYP. MAX. UNIT
TEST CONDITION
V
VCBO
VCEO
ICBO
IEBO
hFE
20
12
IC=1.0μA
IC=100μA
V
0.1
0.1
300
μA
μA
VCB=10V
VEB=1V
60
9
150
6.5
VCE=10V,IC=20mA
VCE=10V,IC=20mA
VCB=10V,IE=0mA,f=1MHz
VCE=10V,IC=20mA,f=1GHz
VCE=10V,IC=40mA,f=1GHz
VCE=10V,Ic=7mA,f=1GHz
Transit frequency
f
T
GHz
pF
Output feedback capacitance
Power gain
Cre
| S21e |2
NF
0.65
10
dB
Noise factor
2.6
3.2
2.3
dB
1.7
Package &Dimension：
SOT-89
REV.08
2 of 3
2SC3357
REV.08
3 of 3
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