2SC1623L4-A [NEC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, MINIMOLD PACKAGE-3;
| 型号： | 2SC1623L4-A |
| 厂家： | 
NEC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, MINIMOLD PACKAGE-3 晶体 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
PACKAGE DIMENSIONS
•
High DC Current Gain: hFE = 200 TYP.
(VCE = 6.0 V, IC = 1.0 m A)
in m illim eters
2.8 ± 0.2
1.5
•
High Voltage: VCEO = 50 V
+0.1
0.65
–0.15
ABSOLUTE MAXIMUM RATINGS
Maxim um Voltages and Current (TA = 25 ˚C)
2
1
Collector to Base Voltage
Collector to Em itter Voltage
Em itter to Base Voltage
Collector Current (DC)
VCBO
VCEO
VEBO
IC
60
50
V
V
3
5.0
100
V
m A
Maxim um Power Dissipation
Total Power Dissipation
Marking
at 25 ˚C Am bient Tem perature PT
Maxim um Tem peratures
200
150
m W
˚C
J unction Tem perature
Tj
Storage Tem perature Range
Tstg
–55 to +150 ˚C
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Em itter Cutoff Current
DC Current Gain
SYMBOL
ICBO
MIN.
TYP.
MAX.
0.1
UNIT
TEST CONDITIONS
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
µA
µA
IEBO
0.1
hFE
90
200
0.15
0.86
0.62
250
3.0
600
0.3
VCE = 6.0 V, IC = 1.0 m A*
IC = 100 m A, IB = 10 m A*
IC = 100 m A, IB = 10 m A*
VCE = 6.0 V, IC = 1.0 m A*
VCE = 6.0 V, IE = –10 m A
VCB = 6.0 V, IE = 0, f = 1.0 MHz
Collector Saturation Voltage
Base to Saturation Voltage
Base Em itter Voltage
Gain Bandwidth Product
Output Capacitance
VCE(sat)
VBE(sat)
VBE
V
V
1.0
0.55
0.65
V
fT
MHz
pF
Cob
* Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %
hFE Classification
Marking
L4
L5
L6
200 to 400
L7
300 to 600
hFE
90 to 180
135 to 270
Document No. TC-1481C
(O.D. No. TC-5172C)
Date Published July 1995 P
Printed in Japan
1984
©
2SC1623
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
NORMALIZED COLLECTOR CUTOFF
CURRENT vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
10000
5000
180
160
140
120
100
80
Free air
2000
1000
500
200
100
50
20
10
5
60
40
20
2
1
0
–20
0
20 40 60 80 100 120 140 160 180
TA - Ambient Temperature - ˚C
0
20
40
60
80 100 120 140 160
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
45
100
80
60
40
20
0
10
8
6
4
IB = 0.1 mA
0
2
µ
0
0
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
VCE - Collector to Emitter Voltage - V
VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 6.0 V
Pulsed
1000
1000
500
300
500
300
TA = 75 ˚C
25 ˚C
–25 ˚C
VCE = 6.0 V
1.0 V
100
100
0.5 V
50
30
50
30
10
10
5
3
5
3
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
IC - Collector Current - mA
IC - Collector Current - mA
2
2SC1623
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
100
10
5
V
CE = 6.0 V
Pulsed
50 Pulsed
20
10
I
C
= 50 · I
20
B
2
1
10
5
2
1
VBE(sat)
0.5
0.2
0.1
IC
= 50 · I
B
0.5
0.2
0.1
VCE(sat)
0.05
0.05
0.02
0.01
0.02
0.01
0.1 0.2
0.5
1
2
5
10 20
50 100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
BE - Base to Emitter Voltage - V
IC
- Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
INPUT AND OUTPUT CAPACITANCE
vs. REVERSE VOLTAGE
10000
5000
100
50
f = 1.0 MHz
2000
1000
500
20
10
5
6 V
VCE =10 V
200
100
50
2
1
2 V
1 V
0.5
20
10
0.2
0.1
0.1 0.2
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20 –50 –100
0.5
CB - Collector to Base Voltage - V
EB - Emittor to Base Voltage - V
1
2
5
10 20
50 100
IE
- Emitter Current - mA
V
V
INPUT IMPEDANCE VOLTAGE FEEDBACK
RATIO AND OUTPUT ADMITTANCE vs.
SMALL SIGNAL CURRENT GAIN
SMALL SIGNAL CURRENT GAIN vs.
DC CURRENT GAIN
1000
800
600
400
200
0
100
50
40
30
20
10
0
50
40
30
20
10
0
V
CE = 6.0 V
= 1.0 mA
f = 1.0 kHz
V
CE = 6.0 V
= 1.0 mA
f = 1.0 kHz
I
C
I
C
µ
80
60
40
20
0
h
h
h
oe
re
ie
200
400
600
800
1000
0
200
400
600
800
1000
h
FE - DC Current Gain
hfe - Small Signal Current Gain
3
2SC1623
NORMALIZED h-PARAMETER vs.
COLLECTOR CURRENT
NORMALIZED h-PARAMETER vs.
COLLECTOR TO EMITTER VOLTAGE
10
5
3
2
1
0
VCE = 6.0 V
f = 1.0 kHz
ICE = 1.0 V
f = 1.0 kHz
hie
he(IC)
he(VCE)
he(VCE = 6 V)
He =
He =
he(IC = 1.0 mA)
hre
hoe
2
1
hfe
hoe
hre
hfe hie
hre
hfe
0.5
hoe
hre
hie
hoe
hfe hie
0.2
0.1
0.1 0.2
0.5
1
2
5
10
10
20
30
IC - Collector Current - mA
VCE - Collector to Emitter Voltage - V
4
2SC1623
[MEMO]
5
2SC1623
[MEMO]
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a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
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Anti-radioactive design is not implemented in this product.
M4 94.11
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