2SC1623L6 [MCC]
NPN Silicon Epitaxial Transistors; NPN硅外延晶体管
| 型号： | 2SC1623L6 |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN Silicon Epitaxial Transistors |
| 文件： | 总1页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2SC1623
Features
·
·
High DC Current Gain: hFE=200 TYP.(VCE=6.0V, I =1.0mA)
C
NPN Silicon
High voltage: VCEO=50V
Epitaxial Transistors
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Rating
50
60
5.0
100
200
-55 to +150
-55 to +150
Unit
V
V
SOT-23
A
D
V
mA
mW
OC
OC
PC
Collector power dissipation
Junction Temperature
Storage Temperature
B
C
TJ
TSTG
F
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
H
G
J
OFF CHARACTERISTICS
ICBO
Collector Cutoff Current
(VCB=60Vdc,IE=0)
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
---
---
---
0.1
0.1
uAdc
uAdc
K
DIMENSIONS
MM
IEBO
INCHES
MIN
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
ON CHARACTERISTICS
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
hF
DC Current Gain*
---
(I =1.0mAdc, VCE=6.0Vdc)
90
200
600
C
VCE(sat)
VBE(SAT)
VBE
Collector Saturation Voltage*
(I =100mAdc, I =10mAdc)
---
---
0.15
0.86
0.3
1.0
0.65
---
Vdc
Vdc
Vdc
pF
C
B
F
G
H
J
Base Saturation Voltage*
(I =100mAdc,I =10mAdc)
C
B
.085
.37
Base Emitter Voltage*
K
(VCE=6.0Vdc, I =1.0mAdc)
0.55 0.62
C
Suggested Solder
Pad Layout
Collector Capacitance
(VCB=6.0Vdc, IE=0, f=1.0MHz)
Gain Bandwidth product
(VCE=6.0Vdc, IE=10mAdc)
Cob
fT
---
---
3.0
250
.031
.800
---
MHz
.035
.900
.079
2.000
inches
mm
hFE CLASSIFICATION
Marking
hFE
L4
90-180
L5
135-270
L6
200-400
L7
300-600
.037
.950
* Pulse Test PW<350us, duty cycle<2%
.037
.950
www.mccsemi.com
Revision: 2
2003/04/30
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