130NT3 [NAINA]
Non-isolated Thyristor Module; 非隔离晶闸管模块
| 型号： | 130NT3 |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | Non-isolated Thyristor Module |
| 文件： | 总2页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
130NT3
Naina Semiconductor Ltd.
Non-isolated Thyristor Module
Features
•
•
•
•
•
Low voltage three-phase
High surge current of 2500A @ 60Hz
Easy construction
Non-isolated
Mounting base as common anode
Voltage Ratings (TC = 25OC unless otherwise specified)
Parameter
Symbol
Values
Units
Maximum repetitive peak
reverse voltage
VRRM
300
V
Maximum non-repetitive
peak reverse voltage
VRSM
VDRM
360
300
V
V
Maximum repetitive peak
off-state voltage
NT3
Electrical Characteristics (TC = 25OC unless otherwise specified)
Parameter
Conditions
Symbol
IT(AV)
Values
130
Units
Single phase, half-wave, 1800
Average on-state current
R.M.S. on-state current
A
A
conduction @ TC = 1160C
IT(RMS)
204
half cycle, 50Hz/60Hz, peak value,
non-repetitive
On-state surge current
ITSM
3300
A
I2t required for fusing
I2t
51500
A2S
W
W
A
Peak gate power dissipation
Average gate power dissipation
Peak gate current
PGM
10
1
PGM(AV)
IGM
3
Peak gate voltage (forward)
Peak gate voltage (reverse)
VFGM
VRGM
10
5
V
V
I0 = 200mA, V0 = ½ VDRM , dIG/dt = 1
A/µs
Critical rate of rise of on-state current
di/dt
50
A/µs
TJ = 1500C, V0 = 2/3 VDRM , exponential
wave
Critical rate of rise of off-state voltage
Holding current
dv/dt
IH
50
70
V/µs
mA
Thermal & Mechanical Specifications (TC = 25OC unless otherwise specified)
Parameter
Symbol
TJ
Values
-30 to +150
-30 to +125
0.25
Units
0C
0C
Operating junction temperature range
Storage temperature range
Thermal resistance, junction to case
TSTG
Rth(JC)
0C/W
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
• Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
130NT3
Naina Semiconductor Ltd.
ALL DIMENSIONS IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
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