130NTT [NAINA]
Thyristor - Thyristor Module; 晶闸管 - 晶闸管模块
| 型号： | 130NTT |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | Thyristor - Thyristor Module |
| 文件： | 总2页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
130NTT
Naina Semiconductor Ltd.
Thyristor – Thyristor Module
Features
•
•
•
•
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol
IF(AV)
IF(RMS)
IFSM
Values
Units
A
Maximum average forward current @ TJ =
850C
130
Maximum average RMS forward current
300
A
Maximum non-repetitive surge current @ t
= 10ms
Maximum I2t for fusing @ t = 10ms
M2
3300
51
A
I2t
kA2s
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Values
-65 to +125
0.18
Units
0C
0C/W
Operating junction temperature range
Thermal resistance, junction to case
TJ
Rth(JC)
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Symbol
IT(max)
VRRM
VFM
Values
130
Units
A
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
200 to 1600
1.55
V
V
Gate current required to trigger
Gate voltage required to trigger
Holding current range
IGT
150
mA
V
VGT
2.5
IH
200
mA
mA
V/µs
V
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
IL
300
dv/dt
VISO
1000
3500
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
130NTT
Naina Semiconductor Ltd.
ALL DIMENSIONS IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
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