MJE1320T [MOTOROLA]
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| 型号： | MJE1320T |
| 厂家： | 
MOTOROLA |
| 描述： | 暂无描述 晶体 晶体管 |
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by MJE1320/D
SEMICONDUCTOR TECHNICAL DATA
POWER TRANSISTOR
2 AMPERES
Switchmode Series
900 VOLTS
80 WATTS
This transistor is designed for high–voltage, power switching in inductive circuits
where RBSOA and breakdown voltage are critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
•
•
•
•
•
Fluorescent Lamp Ballasts
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Features:
•
•
•
High V
Low Saturation Voltage
100 C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Capability (1800 Volts)
CEV
CASE 221A–06
TO–220AB
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter Base Voltage
V
900
1800
9
CEO(sus)
V
CEV
V
EB
Collector Current — Continuous
Peak(1)
I
C
2
5
I
CM
Base Current — Continuous
Peak(1)
I
1.5
2.5
Adc
B
I
BM
Total Power Dissipation @ T = 25 C
P
80
32
0.64
Watts
C
D
@ T = 100 C
C
W/ C
C
Derate above 25 C
Operating and Storage Junction Temperature Range
T , T
J
–65 to +150
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.56
275
Unit
C/W
C
Thermal Resistance, Junction to Case
R
θJC
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SWITCHMODE is a trademark of Motorola, Inc.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
V
900
—
—
Vdc
CEO(sus)
(I = 50 mA, I = 0)
C
B
Collector Cutoff Current
I
mAdc
CEV
(V
CEV
(V
CEV
= Rated Value, V
= Rated Value, V
= 1.5 Vdc)
= 1.5 Vdc, T = 100 C)
—
—
—
—
0.25
2.5
BE(off)
BE(off)
C
Emitter Cutoff Current
(V = 9 Vdc, I = 0)
I
—
—
0.25
mAdc
EBO
EB
C
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
I
See Figure 13
See Figure 14
S/b
RBSOA
(1)
ON CHARACTERISTICS
DC Current Gain (V
= 5 Vdc)
I
C
I
C
= 2 Adc
= 1 Adc
h
FE
2.5
3
4.5
7
—
—
—
—
CE
Collector–Emitter Saturation Voltage
(I = 1 Adc, I = 0.5 Adc)
V
Vdc
CE(sat)
—
—
—
0.18
0.3
0.3
1
2.5
1.5
C
B
(I = 2 Adc, I = 1 Adc)
C
B
(I = 1 Adc, I = 0.5 Adc, T = 100 C)
C
B
C
Base–Emitter Saturation Voltage
(I = 1 Adc, I = 0.5 Adc)
V
Vdc
BE(sat)
—
—
—
0.2
0.9
0.15
1.5
2.8
1.5
C
B
(I = 2 Adc, I = 1 Adc)
C
B
(I = 1 Adc, I = 0.5 Adc, T = 100 C)
C
B
C
DYNAMIC CHARACTERISTICS
Output Capacitance
C
—
80
—
pF
ob
(V
CB
= 10 Vdc, I = 0, f = 1 MHz)
test
E
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
t
—
—
—
—
0.1
0.8
4
—
—
—
—
µs
µs
µs
µs
d
V
= 250 Vdc, I = 1 A
C
Rise Time
Storage Time
Fall Time
CC
t
r
I
t
= I = 0.5 Adc
B1 B2
= 25 µs, Duty Cycle
s
2%
p
t
0.8
f
Inductive Load, Clamped (Table 2)
Storage Time
t
—
—
—
—
2.8
2.2
3.7
3.5
—
—
µs
µs
µs
µs
sv
T
= 25 C
C
Crossover Time
t
c
I
V
= 1 A, V
clamp
BE(off)
= 400 Vdc,
C
Storage Time
Crossover Time
Fall Time
t
sv
10.5
10
= 2 Vdc, I = 0.5 Adc
B1
T
C
= 100 C
t
c
(1) Pulse Test: Pulse Width = 300 µs. Duty Cycle
2%.
2
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
100
70
50
2.8
2.4
2 A 2.5 A
I
= 1 A
C
30
20
V
= 5 V
2
1.6
1.2
0.8
CE
T
= 100
°
C
C
25
°C
10
7
5
T
= 25°C
J
3
2
0.4
0
1
0.05 0.07
0.2
0.3
0.5 0.7
1
2
3
5
0.1
0.1
0.2 0.3
0.5 0.7
1
2
5
7
10
I
, COLLECTOR CURRENT (AMPS)
I
, BASE CURRENT (AMP)
C
B
Figure 2. Collector Saturation Region
Figure 1. DC Current Gain
2
1.3
1.1
1.6
I
/I = 2
I
/I = 2
C B
C B
T
= 25°C
1.2
0.8
0.9
0.7
J
100°C
T
= 100°C
J
0.4
0
0.5
0.3
25°C
0.25 0.3
0.4
0.5
0.7
1
1.5
2
2.5
0.25 0.3
0.4
0.5
I , COLLECTOR CURRENT (AMPS)
C
0.7
1
1.5
2
2.5
I
, COLLECTOR CURRENT (AMPS)
C
Figure 3. Collector–Emitter Saturation Voltage
Figure 4. Base–Emitter Saturation Voltage
10K
1K
100
10
10K
5K
V
= 250 V
CE
3K
2K
f = 1 MHz
T
= 150°C
J
C
ib
T
= 25°C
J
125°C
1K
100°C
500
300
200
75°C
C
ob
100
25
°
C
50
30
20
1
REVERSE
–0.2
FORWARD
+0.2
10
0.1
–0.4
0
+0.4
+0.6
0.2 0.3 0.5
1
2
5
10 20
50 100 200 500 1K 2K
3
30
V , REVERSE VOLTAGE (VOLTS)
R
V
, BASE–EMITTER VOLTAGE (VOLTS)
BE
Figure 5. Collector Cutoff Region
Figure 6. Capacitance Variation
3
Motorola Bipolar Power Transistor Device Data
TYPICAL DYNAMIC CHARACTERISTICS
10
I
pk
C
V
CE(pk)
V
= 1 V
7
5
BE(off)
90% V
CE(pk)
90% I
C(pk)
2 V
3 V
I
C
t
t
t
t
ti
sv
rv
fi
3
2
t
c
V
CE
10% V
CE(pk)
T
= 100°C
/I = 2
10%
pk
J
2% I
I
90% I
B1
C
I
I
B
C
C B1
1
0.7
0.5
TIME
0.3
0.5
0.7
1
2
3
5
6
I
, COLLECTOR CURRENT (AMPS)
C
Figure 7. Inductive Switching Measurements
Figure 8. Inductive Storage Time
6
5
6
5
V
= 3 V
BE(off)
2 V
3
2
3
2
V
= 3 V
BE(off)
2 V
1 V
1 V
1
0.7
0.5
1
0.7
0.5
0.3
0.3
0.3
0.5
0.7
1
2
3
5
6
0.3
0.5
0.7
1
2
3
5
6
I
, COLLECTOR CURRENT (AMPS)
I
, COLLECTOR CURRENT (AMPS)
C
C
Figure 10. Inductive Fall Time
Figure 9. Inductive Crossover Time
Table 1. Resistive Load Switching
t
and t
t and t
s f
+Vdc
≈ 11 Vdc
d
r
0 V
100
F
20
2N6191
≈
–35 V
H.P. 214
OR EQUIV.
P.G.
+
F
*I
10
µ
C
R
B1
B2
H.P. 214
OR EQUIV.
P.G.
0.02
µ
*I
B
A
T.U.T.
R
R
L
0.02 µF
R
= 22
Ω
B
2N5337
50
V
CC
50
1
µF
500
100
–V
V
R
= 250 Vdc
= 250 Ω
= 1 Adc
CC
L
+V
–5 V
≈
11 V
0 V
V
in
I
C
I
B
0 V
= 0.5 Adc
A
T.U.T.
t
≤ 15 ns
r
R
L
*I
C
*Tektronix AM503
*P6302 or Equivalent
*I
B
50
V
CC
V
R
= 250 Vdc
= 250 Ω
= 1 Adc
I
I
= 0.5 Adc
= 0.5 Adc
R
R
R
= 22 Ω
= 10 Ω
= 0 Ω
CC
L
B1
B2
B1
B2
B2
I
C
For V
= 5 V
BE(off)
Note: Adjust – V to obtain desired V
at Point A.
BE(off)
4
Motorola Bipolar Power Transistor Device Data
Table 2. Inductive Load Switching
+V
≈ 11 V
0.02 µF
100
H.P. 214
OR EQUIV.
P.G.
2N6191
20
+
–
0
10 µF
R
R
B1
≈
–35 V
A
0.02 µF
B2
1
+
µ
F
–
50
2N5337
–V
100
500
I
C(pk)
T
+V
–V
1
I
C
0 V
A
*I
V
CE(pk)
C
L
V
CE
T.U.T.
MR856
L
(I )
*I
B
coil Cpk
V
T
T
1
50
CC
I
V
B1
V
clamp
CC
adjusted to obtain I
1
C(pk)
I
B
V
Inductive Switching
L = 1.1 mH
RBSOA
L = 1.1 mH
(BR)CEO
I
B2
L = 10 mH
R
=
R
= 0
= 20 Volts
selected for desired I
R
= 0
= 20 Volts
selected for desired I
B1 B1
B2
B2
B2
V
CC
= 20 Volts
V
CC
V
CC
R
R
B1
B1
*Tektronix
*P–6042 or
*Equivalent
Scope — Tektronix
7403 or
Equivalent
Note: Adjust –V to obtain desired V at Point A.
BE(off)
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
power that can be handled to values less than the limitations
imposed by second breakdown.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
REVERSE BIAS
down. Safe operating area curves indicate I – V
CE
limits of
C
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 13 gives the RBSOA character-
istics.
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 12 is based on T = 25 C; T
is
C
J(pk)
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when T ≥ 25 C. Second breakdown limitations do not der-
C
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 12 may be found at any case tem-
perature by using the appropriate curve on Figure 11.
T
may be calculated from the data in Figure 14. At
J(pk)
high case temperatures, thermal limitations will reduce the
5
Motorola Bipolar Power Transistor Device Data
GUARANTEED SAFE OPERATING AREA
1
0.8
0.6
0.4
10
5
10
5 ms
µs
SECOND BREAKDOWN
DERATING
2
1
0.5
0.2
dc
T
= 25°C
C
THERMAL
DERATING
0.1
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.05
0.2
0
0.02
0.01
20
40
60
T
80
100
120
C)
140
160
1
10
100
900
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
, CASE TEMPERATURE (
°
CE
C
Figure 12. Maximum Rated Forward Bias Safe
Operating Area
Figure 11. Power Derating
5
4
3
2
1
I
/I = 1
C B
T
V
≤ 100°C
J
= 2 V
BE(off)
I
/I = 2
C B
0
0
600
900
1200
1500
1800
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 13. Maximum Rated Reverse Bias Safe
Operating Area
1
D = 0.5
0.2
0.1
0.05
0.1
P
(pk)
Z
R
= r(t) R
θ
θ
θ
JC(t)
JC
JC
°C/W MAX
0.02
= 1.56
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
READ TIME AT t
t
1
2
0.01
SINGLE PULSE
0.1
T
– T = P
Z
(pk) θJC
J(pk)
C
DUTY CYCLE, D = t /t
1 2
0.01
0.01
1
10
100
1K
t, TIME (ms)
Figure 14. Thermal Response
6
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
7
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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