MJE15028 [BOCA]
HIGH FREQUENCY DRIVERS IN AUDIO AMPLIFIERS; 在音频放大器的高频驱动器
| 型号： | MJE15028 |
| 厂家： | 
BOCA SEMICONDUCTOR CORPORATION |
| 描述： | HIGH FREQUENCY DRIVERS IN AUDIO AMPLIFIERS |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TO-220 Plastic Package
MJE15028, MJE15030
MJE15029, MJE15031
Boca Semiconductor Corp.
BSC
MJE15028, 15030
NPN PLASTIC POWER TRANSISTORS
MJE15029, 15031
PNP PLASTIC POWER TRANSISTORS
High frequency Drivers in Audio Amplifiers
PIN CONFIGURATION
1. BASE
4
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
C
E
DIM
MIN.
MAX.
B
F
A
B
C
D
E
14.42
9.63
3.56
16.51
10.67
4.83
0.90
1.40
3.88
2.79
3.43
0.56
14.73
4.07
2.92
31.24
1.15
3.75
2.29
2.54
1
2
3
F
G
H
J
K
L
M
N
O
12.70
2.80
2.03
J
D
G
M
DEG 7
ABSOLUTE MAXIMUM RATINGS
15028
15030
15031
150 V
150 V
A
15029
max. 120
max. 120
max.
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
V
V
CBO
CEO
I
8.0
50
C
Total power dissipation up to T = 25°C
P
max.
W
C
tot
Junction temperature
T
j
max.
150
°C
Collector-emitter saturation voltage
I
= 1A; I = 0.1A
V
CEsat
max.
min.
0.5
40
V
C
B
D.C. current gain
= 0.1 A; V
I
= 2 V
h
FE
C
CE
RATINGS (at T =25°C unless otherwise specified)
15028
15029
15030
15031
A
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
V
CBO
V
CEO
max. 120
max. 120
150 V
150 V
http://www.bocasemi.com
MJE15028, MJE15030
MJE15029, MJE15031
Emitter base voltage (open collector)
Collector current
Collector current (Peak value)
Base current
Total power dissipation up to T = 25°C
C
Derate above 25°C
V
max.
max.
max.
max.
max.
max.
max.
max.
max.
5.0
8.0
16
2.0
50
V
A
A
A
EBO
I
I
I
C
C
B
P
W
W/°C
W
W/°C
ºC
tot
0.4
2.0
Total power dissipation up to T = 25°C
A
P
tot
Derate above 25°C
Junction temperature
Storage temperature
0.016
150
–65 to +150 ºC
T
j
T
stg
THERMAL RESISTANCE
From junction to case
From junction to ambient
R
R
=
=
2.5
62.5
°C/W
°C/W
th j–c
th j–a
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
15028
15029
15030
15031
Collector cutoff current
I
I
I
I
= 0; V
= 0; V
= 0; V
= 0; V
= 120V
= 150V
= 120V
= 150V
I
I
I
I
max. 0.1
– mA
0.1 mA
– µA
B
B
E
E
CE
CE
CB
CB
CEO
CEO
CBO
CBO
max.
–
max. 10
max.
max.
–
10 µA
Emitter cut-off current
I
= 0; V = 5V
I
10
µA
C
EB
EBO
Breakdown voltages
I
I
I
= 10 mA; I = 0
V
V
V
* min. 120
min. 120
min.
150
150
V
V
V
C
C
E
B
CEO(sus)
= 1 mA; I = 0
E
CBO
= 1 mA; I = 0
5.0
0.5
1.0
C
EBO
Saturation voltage
I
= 1 A; I = 0.1 A
V *
CEsat
max.
max.
V
V
C
B
Base emitter on voltage
= 1A; V = 2V
I
V *
BE(on)
C
CE
D.C. current gain
I
I
I
I
= 0.1 A; V
CE
= 2 V
h
*
*
*
*
min.
min.
min.
min.
40
40
40
20
C
C
C
C
FE
= 2 A; V
= 3 A; V
= 4 A; V
= 2 V
= 2 V
= 2 V
h
FE
CE
CE
CE
h
FE
h
FE
Transition frequency f = 10 MHz
= 500 mA; V = 10 V
I
f (1)
T
min.
30
MHz
C
CE
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
(1) f = | h | • f
T
fe test
http://www.bocasemi.com
相关型号：
MJE1502816
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
MJE1502816A
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明