BC639RLRP [MOTOROLA]

暂无描述;
BC639RLRP
型号: BC639RLRP
厂家: MOTOROLA    MOTOROLA
描述:

暂无描述

晶体 晶体管
文件: 总4页 (文件大小:120K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Order this document  
by BC635/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
2
3
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC  
BC  
BC  
635  
637  
639  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
CASE 29–04, STYLE 14  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
45  
60  
80  
45  
60  
80  
5.0  
0.5  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
Vdc  
Vdc  
Vdc  
(BR)CEO  
(I = 10 mAdc, I = 0)  
BC635  
BC637  
BC639  
45  
60  
80  
C
B
CollectorBase Breakdown Voltage  
(I = 100 µAdc, I = 0)  
V
(BR)CBO  
BC635  
BC637  
BC639  
45  
60  
80  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
5.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= 30 Vdc, I = 0)  
100  
10  
nAdc  
µAdc  
E
= 30 Vdc, I = 0, T = 125°C)  
E
A
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.  
Motorola, Inc. 1996  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
(1)  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 5.0 mAdc, V  
= 2.0 Vdc)  
= 2.0 Vdc)  
25  
40  
40  
40  
25  
C
CE  
(I = 150 mAdc, V  
CE  
BC635  
BC637  
BC639  
250  
160  
160  
C
(I = 500 mA, V  
C CE  
= 2.0 V)  
CollectorEmitter Saturation Voltage  
(I = 500 mAdc, I = 50 mAdc)  
V
0.5  
Vdc  
Vdc  
CE(sat)  
C
B
Base–Emitter On Voltage  
(I = 500 mAdc, V = 2.0 Vdc)  
V
BE(on)  
1.0  
C
CE  
DYNAMIC CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
200  
7.0  
50  
MHz  
pF  
T
(I = 50 mAdc, V  
C CE  
= 2.0 Vdc, f = 100 MHz)  
Output Capacitance  
(V = 10 Vdc, I = 0, f = 1.0 MHz)  
C
ob  
CB  
Input Capacitance  
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)  
E
C
pF  
ib  
EB  
C
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.  
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
500  
1000  
500  
V
= 2 V  
CE  
SOA = 1S  
200  
100  
P
T 25°C  
A
D
200  
100  
50  
50  
P
T
25°C  
D
C
20  
10  
5
BC635  
BC637  
BC639  
P
P
T
T
25  
25  
°
°
C
C
D
D
A
C
2
1
20  
1
2
3
4
5
7
10  
20  
30 40 50 70 100  
1
3
5
10  
I , COLLECTOR CURRENT (mA)  
C
30 50 100  
300 500 1000  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
Figure 1. Active Region Safe Operating Area  
Figure 2. DC Current Gain  
500  
300  
1
0.8  
0.6  
V
@ I /I = 10  
C B  
BE(sat)  
V
@ V = 2 V  
CE  
BE(on)  
V
= 2 V  
CE  
100  
50  
0.4  
0.2  
0
V
@ I /I = 10  
CE(sat)  
C B  
20  
1
10  
100  
1000  
1
10  
100  
1000  
I
, COLLECTOR CURRENT (mA)  
I , COLLECTOR CURRENT (mA)  
C
C
Figure 3. Current–Gain — Bandwidth Product  
Figure 4. “Saturation” and “On” Voltages  
–0.2  
–1.0  
V
= 2 VOLTS  
°C to +100°C  
CE  
T = 0  
–1.6  
–2.2  
θ
for V  
BE  
V
1
3
5
10  
30 50  
100  
300 500 1000  
I
, COLLECTOR CURRENT (mA)  
C
Figure 5. Temperature Coefficients  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
3
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.  
DIMENSION D AND J APPLY BETWEEN L AND K  
MINIMUM. LEAD DIMENSION IS UNCONTROLLED  
IN P AND BEYOND DIMENSION K MINIMUM.  
R
P
L
F
SEATING  
PLANE  
INCHES  
MIN  
MILLIMETERS  
K
DIM  
A
B
C
D
F
G
H
J
K
L
N
P
MAX  
0.205  
0.210  
0.165  
0.022  
0.019  
0.055  
0.105  
0.020  
–––  
MIN  
4.45  
4.32  
3.18  
0.41  
0.41  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
–––  
MAX  
5.20  
5.33  
4.19  
0.55  
0.48  
1.39  
2.66  
0.50  
–––  
0.175  
0.170  
0.125  
0.016  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
–––  
D
J
X X  
G
H
V
SECTION X–X  
C
–––  
–––  
0.105  
0.100  
–––  
2.66  
2.54  
–––  
1
N
R
V
0.115  
0.135  
2.93  
3.43  
N
–––  
–––  
STYLE 14:  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
CASE 029–04  
(TO–226AA)  
ISSUE AD  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA/EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
BC635/D  

相关型号:

BC639T/R

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92
ETC

BC639TA

Transistor,
FAIRCHILD

BC639ZL1

1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN
ONSEMI

BC639ZL1

500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MOTOROLA

BC639ZL1

1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN
ROCHESTER

BC639ZL1G

High Current Transistors
ONSEMI

BC639_NL

暂无描述
FAIRCHILD

BC63M100

Circuit Protection Solutions Low Voltage Fuse Links Catalogue
COOPER

BC63M80

Circuit Protection Solutions Low Voltage Fuse Links Catalogue
COOPER

BC640

PNP EPITAXIAL SILICON TRANSISTOR
FAIRCHILD

BC640

High Current Transistors
MOTOROLA

BC640

PNP Silicon AF Transistors (High current gain High collector current)
INFINEON