BC640 [INFINEON]
PNP Silicon AF Transistors (High current gain High collector current); PNP硅晶体管自动对焦（高电流增益高集电极电流）
| 型号： | BC640 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistors (High current gain High collector current) |
| 文件： | 总5页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon AF Transistors
BC 636
… BC 640
● High current gain
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 635, BC 637,
2
3
BC 639 (NPN)
1
Package1)
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BC 636
BC 638
BC 640
–
Q68000-A3365
Q68000-A3366
Q68000-A3367
E
C
B
TO-92
If desired, selected transistors, type BC 6 ★ ★ –10 (hFE = 63 … 160), or BC 6 ★ ★ –16
(hFE = 100 … 250) are available. Ordering codes upon request.
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group
1
BC 636
… BC 640
Maximum Ratings
Parameter
Symbol Values
BC 636
Unit
BC 638
60
BC 640
80
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
VCE0
VCB0
VEB0
45
45
V
60
100
5
I
I
I
I
C
1
A
Peak collector current
Base current
CM
1.5
B
100
200
0.8 (1)
150
mA
Peak base current
BM
= 90 ˚C1)
P
tot
W
Total power dissipation, T
C
Junction temperature
Tj
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Junction - case2)
R
th JA
th JC
≤ 156
≤ 55
K/W
R
1)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area
for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
2)
Semiconductor Group
2
BC 636
… BC 640
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
BC 636
BC 638
BC 640
45
60
80
–
–
–
–
–
–
Collector-base breakdown voltage
= 100 µA
IC
BC 636
BC 638
BC 640
45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
= 10 µA
5
–
–
IE
Collector cutoff current
I
CB0
EB0
VCB = 30 V
–
–
–
–
100
20
nA
µA
V
CB = 30 V, T
A
= 150 ˚C
Emitter cutoff current
I
–
–
100
nA
–
VEB = 4 V
DC current gain
h
FE
IC
IC
IC
= 5 mA; VCE = 2 V
= 150 mA; VCE = 2 V1)
= 500 mA; VCE = 2 V1)
25
40
25
–
–
–
–
250
–
Collector-emitter saturation voltage1)
= 500 mA; I = 50 mA
V
CEsat
BE
–
–
500
mV
V
IC
B
Base-emitter voltage1)
= 500 mA; VCE = 2 V
V
–
–
1
IC
AC characteristics
Transition frequency
fT
–
100
–
MHz
IC
= 50 mA, VCE = 10 V, f = 20 MHz
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
BC 636
… BC 640
Total power dissipation Ptot = f (T
A
; TC)
Collector cutoff current ICB0 = f (T )
A
V
CB = 30 V
Permissible pulse load RthJA = f (t
p)
Collector current I = f (VBE)
C
V
CE = 2 V
Semiconductor Group
4
BC 636
… BC 640
DC current gain hFE = f (I
C
)
Collector-emitter saturation voltage
V
CE = 2 V
V
CEsat = f (I
C
)
hFE = 10
Transition frequency f
T
= f (I )
C
Semiconductor Group
5
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