BC372 [MOTOROLA]

High Voltage Darlington Transistors; 高压达林顿晶体管
BC372
型号: BC372
厂家: MOTOROLA    MOTOROLA
描述:

High Voltage Darlington Transistors
高压达林顿晶体管

晶体 晶体管 达林顿晶体管 高压
文件: 总4页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Order this document  
by BC372/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR 3  
BASE  
2
1
2
3
EMITTER 1  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
BC372 BC373  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
100  
100  
80  
80  
CES  
CBO  
EBO  
V
V
12  
Collector Current — Continuous  
I
C
1.0  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
Vdc  
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = 100 Adc, I = 0)  
BC372  
BC373  
100  
80  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
V
Vdc  
BC372  
BC373  
100  
80  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
12  
Vdc  
E
C
Collector Cutoff Current  
I
nAdc  
CBO  
(V  
CB  
(V  
CB  
= 80 Vdc, I = 0)  
BC372  
BC373  
100  
100  
E
= 60 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = 10 V, I = 0)  
I
100  
nAdc  
EBO  
EB  
C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.  
Motorola, Inc. 1996  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
(1)  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
K
(I = 250 mAdc, V  
= 5.0 Vdc)  
= 5.0 Vdc)  
8.0  
10  
160  
C
CE  
CE  
(I = 100 mAdc, V  
C
CollectorEmitter Saturation Voltage  
(I = 250 mAdc, I = 0.25 mAdc)  
V
V
1.0  
1.1  
2.0  
Vdc  
Vdc  
CE(sat)  
C
B
BaseEmitter Saturation Voltage  
(I = 250 mAdc, I = 0.25 mAdc)  
1.4  
BE(sat)  
C
B
DYNAMIC CHARACTERISTICS  
Current–Gain Bandwidth Product  
f
100  
200  
10  
25  
MHz  
pF  
T
(I = 100 mAdc, V  
C
= 5.0 Vdc, f = 100 MHz)  
CE  
Output Capacitance  
C
ob  
(V  
CB  
= 10 Vdc, I = 0, f = 1.0 MHz)  
E
Noise Figure  
(I = 1.0 mAdc, V  
NF  
2.0  
dB  
= 5.0 Vdc, R = 100 k ohm, f = 1.0 kHz)  
C
CE  
g
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.  
100 K  
1.6  
V
@ I /I = 100  
C B  
BE(sat)  
V
= 5 V  
CE  
1.4  
1.2  
1
T
= 125°C  
A
V
@ V = 5 V  
CE  
BE(on)  
25°C  
–55°C  
10 K  
0.8  
0.6  
0.4  
0.2  
0
V
@ I /I = 100  
C B  
CE(sat)  
1 K  
1000  
100  
1
10  
100  
1000  
5
10  
100  
I , COLLECTOR CURRENT (mA)  
C
500  
I
, COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
Figure 2. “Saturation” and “On” Voltages  
100  
10  
1
V
= 5 V  
CE  
= 25°C  
T
J
C
ib  
C
ob  
10  
0.6  
1
10  
100  
600  
0.1  
10  
V , REVERSE VOLTAGE (VOLTS)  
R
100  
I
, COLLECTOR CURRENT (mA)  
C
Figure 3. Current–Gain — Bandwidth Product  
Figure 4. Capacitances  
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.  
DIMENSION D AND J APPLY BETWEEN L AND K  
MINIMUM. LEAD DIMENSION IS UNCONTROLLED  
IN P AND BEYOND DIMENSION K MINIMUM.  
R
P
L
F
SEATING  
PLANE  
INCHES  
MIN  
MILLIMETERS  
K
DIM  
A
B
C
D
F
G
H
J
K
L
N
P
MAX  
0.205  
0.210  
0.165  
0.022  
0.019  
0.055  
0.105  
0.020  
–––  
MIN  
4.45  
4.32  
3.18  
0.41  
0.41  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
–––  
MAX  
5.20  
5.33  
4.19  
0.55  
0.48  
1.39  
2.66  
0.50  
–––  
0.175  
0.170  
0.125  
0.016  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
–––  
D
J
X X  
G
H
V
SECTION X–X  
C
–––  
–––  
0.105  
0.100  
–––  
2.66  
2.54  
–––  
1
N
R
V
0.115  
0.135  
2.93  
3.43  
N
–––  
–––  
STYLE 1:  
PIN 1. EMITTER  
CASE 029–04  
(TO–226AA)  
ISSUE AD  
2. BASE  
3. COLLECTOR  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
3
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA/EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
BC372/D  

相关型号:

BC372-16

TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 1A I(C) | TO-92
ETC

BC372-25

TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 1A I(C) | TO-92
ETC

BC372-40

TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 1A I(C) | TO-92
ETC

BC372/D

Darlington Transistor NPN
ETC

BC372G

High Voltage Darlington Transistors
ONSEMI

BC372P

TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 1A I(C) | TO-92VAR
ETC

BC372PSM

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

BC372PSMTA

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

BC372PSMTC

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

BC372PSTOA

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

BC372PSTOB

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

BC372PSTZ

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES