BC372/D [ETC]
Darlington Transistor NPN ; 达林顿晶体管NPN\n
| 型号： | BC372/D |
| 厂家： | 
ETC |
| 描述： | Darlington Transistor NPN
|
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC372
BC373
High Voltage
Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
BC372 BC373
Unit
Vdc
Vdc
Vdc
Adc
V
100
100
80
80
CES
CBO
EBO
1
V
V
2
3
12
Collector Current — Continuous
I
C
1.0
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
COLLECTOR 3
THERMAL CHARACTERISTICS
Characteristic
BASE
2
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
JC
R
83.3
q
EMITTER 1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
Vdc
(BR)CES
(BR)CBO
(BR)EBO
(I = 100 mAdc, I = 0)
BC372
BC373
100
80
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
Vdc
BC372
BC373
100
80
—
—
—
—
C
E
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
12
—
—
Vdc
E
C
Collector Cutoff Current
(V = 80 Vdc, I = 0)
I
nAdc
CBO
BC372
BC373
—
—
—
—
100
100
CB
E
(V = 60 Vdc, I = 0)
CB
E
Emitter Cutoff Current
(V = 10 V, I = 0)
I
—
—
100
nAdc
EBO
EB
C
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
February, 2001 – Rev. 1
BC372/D
BC372 BC373
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(I = 250 mAdc, V = 5.0 Vdc)
h
FE
K
8.0
10
—
—
—
160
C
CE
(I = 100 mAdc, V = 5.0 Vdc)
C
CE
Collector–Emitter Saturation Voltage
(I = 250 mAdc, I = 0.25 mAdc)
V
V
—
1.0
1.1
2.0
Vdc
Vdc
CE(sat)
C
B
Base–Emitter Saturation Voltage
(I = 250 mAdc, I = 0.25 mAdc)
—
1.4
BE(sat)
C
B
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product
f
100
—
200
10
—
25
—
MHz
pF
T
(I = 100 mAdc, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
ob
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Noise Figure
NF
—
2.0
dB
(I = 1.0 mAdc, V = 5.0 Vdc, R = 100 k ohm, f = 1.0 kHz)
C
CE
g
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
100 K
1.6
V
@ I /I = 100
C B
BE(sat)
V
CE
= 5 V
1.4
1.2
1
T = 125°C
A
V
BE(on)
@ V = 5 V
CE
25°C
-55°C
10 K
0.8
0.6
0.4
0.2
0
V
@ I /I = 100
C B
CE(sat)
1 K
1000
100
1
10
100
1000
5
10
100
500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. “Saturation” and “On” Voltages
100
10
1
V
= 5 V
CE
T = 25°C
J
C
ib
C
ob
10
0.6
1
10
100
600
0.1
10
100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Current–Gain — Bandwidth Product
Figure 4. Capacitances
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2
BC372 BC373
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
---
A
B
C
D
F
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
---
D
J
X X
G
G
H
J
H
V
SECTION X–X
K
L
C
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
1
N
0.115
0.135
2.93
3.43
N
---
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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3
BC372 BC373
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BC372/D
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