S16S90 [MOSPEC]
SCHOTTKY BARRIER RECTIFIERS(16A,70-100V); 肖特基二极管（ 16A ， 70-100V ）
| 型号： | S16S90 |
| 厂家： | 
MOSPEC SEMICONDUCTOR |
| 描述： | SCHOTTKY BARRIER RECTIFIERS(16A,70-100V) |
| 文件： | 总16页 (文件大小：531K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S9060
Rev. 1, 6/2005
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S9060NR1
MRF6S9060NBR1
MRF6S9060MR1
MRF6S9060MBR1
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,
I
DQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — -47.6 dBc @ 30 kHz Bandwidth
880 MHz, 14 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA,
BROADBAND RF POWER MOSFETs
P
out = 21 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts,
Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF6S9060NR1(MR1)
Drain Efficiency — 63%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF6S9060NBR1(MBR1)
13 inch Reel.
• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
- 0.5, +68
- 0.5, +12
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
227
1.3
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 80°C, 14 W CW
R
θ
JC
°C/W
0.77
0.88
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
µAdc
µAdc
µAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 200 µA)
V
V
1
2
3
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 450 mAdc)
—
—
—
2.9
0.18
4.2
—
0.4
—
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.5 Adc)
V
GS
D
Forward Transconductance
(V = 10 Vdc, I = 3 Adc)
g
fs
DS
D
Dynamic Characteristics
Input Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
106
33
—
—
—
pF
pF
pF
iss
GS
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Reverse Transfer Capacitance
C
rss
1.4
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 450 mA, P = 14 W Avg., f = 880 MHz, Single-Carrier
out
DD
DQ
N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
G
20.5
30.5
—
21.4
32.1
23.5
—
dB
%
ps
Drain Efficiency
η
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
-47.6
-15.3
-45
-9
dBc
dB
—
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921-960 MHz, 50 οhm system)
V
= 28 Vdc, I = 500 mA, P = 21 W Avg., f = 921-960 MHz, GSM EDGE Signal
DQ out
DD
Power Gain
G
—
—
—
—
—
20
46
—
—
—
—
—
dB
%
ps
Drain Efficiency
η
D
Error Vector Magnitude
EVM
SR1
SR2
1.5
-62
-78
%
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
dBc
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921-960 MHz, 50 οhm system) V = 28 Vdc,
DD
I
= 500 mA, P = 60 W, f = 921-960 MHz
DQ
out
Power Gain
G
—
—
—
—
20
63
—
—
—
—
dB
%
ps
Drain Efficiency
Input Return Loss
η
D
IRL
-12
67
dB
W
P
@ 1 dB Compression Point
P1dB
out
(f = 940 MHz)
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
3
V
SUPPLY
B2
B1
R3
R4
R1
+
+
+
V
BIAS
C15
C16 C17 C19
C18
RF
+
+
R2
C11
L2
C9
C7
C8
L1
Z7
OUTPUT
Z10
Z11
Z12
Z13
Z14
C13
Z15
RF
INPUT
C6
C5
Z1
Z2 Z3 Z4
Z5
Z6
Z8
Z9
C14
C10
C12
C1
DUT
C2
C3
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.215″ x 0.065″ Microstrip
0.221″ x 0.065″ Microstrip
0.500″ x 0.100″ Microstrip
0.460″ x 0.270″ Microstrip
0.040″ x 0.270″ Microstrip
0.280″ x 0.270″ x 0.530″ Taper
0.087″ x 0.525″ Microstrip
0.435″ x 0.525″ Microstrip
Z9
0.057″ x 0.525″ Microstrip
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.170″ x 0.065″ Microstrip
0.880″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
Taconic RF-35 0.030″, ε = 3.5
r
Figure 1. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Schematic
Table 6. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Newark
B1
B2
Ferrite Bead
Ferrite Bead
95F786
95F787
Newark
Newark
Newark
Newark
Newark
Newark
Newark
Newark
Newark
Newark
Newark
Coilcraft
Newark
Newark
Newark
Newark
C1, C8, C14, C15
47 pF Chip Capacitors
100B470JP500X
44F3360
C2, C4, C13
C3
0.8-8.0 pF Variable Capacitors, Gigatrim
3.0 pF Chip Capacitor
100B3R0JP500X
100B150JP500X
93F2975
C5, C6
C7, C16, C17
C9
15 pF Chip Capacitors
10 µF, 35 V Tantalum Capacitors
100 µF, 50 V Electrolytic Capacitor
13 pF Chip Capacitors
51F2913
C10, C11
C12
100B130JP500X
100B3R9JP500X
700A561MP150X
95F4579
3.9 pF Chip Capacitor
C18
0.56 µF Chip Capacitor
470 µF, 63 V Electrolytic Capacitor
12.5 nH Inductor
C19
L1, L2
R1
A04T-5
1 kΩ Chip Resistor
05F1545
R2
560 kΩ Chip Resistor
84N2435
R3
12 Ω Chip Resistor
97C9103
R4
27 W Chip Resistor
04H7058
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
4
C7
R2
C19
B1
R3
V
DD
R1
C9
V
GG
B2
L2
C16 C17
R4
C8
C15
C18
C6
C5
L1
C11
C10
C12
C1
C2
C3
C14
C13
C4
TO−270/272
Surface /
Bolt down
Figure 2. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
40
22
21.8
21.6
21.4
21.2
21
V
= 28 Vdc, P = 14 W (Avg.), I = 450 mA
out DQ
DD
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
35
η
D
30
G
ps
−45
−50
−55
−60
−65
−8
ACPR
−12
−16
−20
−24
IRL
20.8
20.6
ALT1
840
850
860
870
880
890
900
910
920
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 14 Watts Avg.
50
21.6
21.4
21.2
21
V
= 28 Vdc, P = 28 W (Avg.), I = 450 mA
out DQ
DD
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
48
η
D
46
44
G
ps
20.8
20.6
20.4
20.2
20
−32
−40
−48
−56
−64
−4
−8
ACPR
ALT1
IRL
−12
−16
−20
840
850
860
870
880
890
900
910
920
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 28 Watts Avg.
23
22
21
20
19
18
17
−10
V
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
DD
I
= 675 mA
DQ
−20
−30
−40
−50
−60
550 mA
450 mA
350 mA
I
= 225 mA
DQ
225 mA
350 mA
V
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
DD
450 mA
675 mA
550 mA
10
1
10
100
300
1
100
P
, OUTPUT POWER (WATTS) PEP
out
P
, OUTPUT POWER (WATTS) PEP
out
Figure 6. Third Order Intermodulation Distortion
versus Output Power
Figure 5. Two-Tone Power Gain versus
Output Power
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
−10
−20
−30
0
V
= 28 Vdc, I = 450 mA, f1 = 880 MHz
DQ
V
= 28 Vdc, P = 60 W (PEP)
out
= 450 mA, Two−Tone Measurements
DD
DD
f2 = 880.1 MHz, Two−Tone Measurements
Center Frequency = 880 MHz
I
DQ
−10
−20
−30
−40
−50
−60
−70
Center Frequency = 880 MHz
−40
−50
−60
3rd Order
5th Order
3rd Order
5th Order
−70
−80
7th Order
7th Order
1
10
, OUTPUT POWER (WATTS) PEP
100
300
0.05 0.1
1
10
100
300
P
TWO−TONE SPACING (MHz)
out
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
56
55
54
Ideal
P3dB = 50 dBm (150 W)
53
52
51
50
49
P1dB = 49.1 dBm (100 W)
Actual
48
47
V
= 28 Vdc, I = 450 mA
DQ
DD
46
45
44
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
22 23 24 25 26 27 28 29 30 31 32 33 34
P , INPUT POWER (dBm)
in
Figure 9. Pulse CW Output Power versus
Input Power
55
45
35
25
15
−25
−35
−45
−55
−65
−75
−85
V
= 28 Vdc, I = 450 mA
DQ
DD
η
D
f = 880 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
25_C
ALT1
85_C
−30_C
25_C
ACPR
G
T = 25_C
85_C
ps
C
25_C
−30_C
5
−5
1
10
, OUTPUT POWER (WATTS) AVG.
P
out
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
22
80
70
60
50
40
−30_C
T = −30_C
C
21.5
21
G
ps
25_C
85_C
25_C
20.5
20
85_C
19.5
19
30
20
10
0
V
= 28 Vdc
DD
= 450 mA
η
D
18.5
18
I
DQ
f = 880 MHz
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
22
21
20
19
18
17
32 V
28 V
24 V
16
15
14
20 V
16 V
13
12
11
10
I
= 450 mA
f = 880 MHz
DQ
V
= 12 V
DD
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
, OUTPUT POWER (WATTS) CW
P
out
Figure 12. Power Gain versus Output Power
9
10
10
10
10
8
7
6
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
8
N-CDMA TEST SIGNAL
100
10
−10
−20
−30
1.2288 MHz
Channel BW
1
−40
−50
−60
−70
0.1
0.01
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability
on CCDF.
0.001
−80
−90
−ACPR @ 30 kHz +ACPR @ 30 kHz
Integrated BW
Integrated BW
0.0001
0
2
4
6
8
10
−100
−110
PEAK−TO−AVERAGE (dB)
Figure 14. Single-Carrier CCDF N-CDMA
−3.6 −2.9 −2.2 −1.5 −0.7
0
0.7 1.5
2.2 2.9 3.6
f, FREQUENCY (MHz)
Figure 15. Single-Carrier N-CDMA Spectrum
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
9
Z = 5 Ω
o
f = 910 MHz
f = 910 MHz
Z
load
Z
source
f = 850 MHz
f = 850 MHz
V
= 28 Vdc, I = 450 mA, P = 14 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
850
865
880
0.44 - j0.20
0.44 - j0.07
0.45 + j0.50
2.28 + j0.23
2.18 + j0.33
2.20 + j0.47
895
910
0.48 + j0.18
0.52 + j0.29
2.15 + j0.61
2.00 + j0.68
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
10
NOTES
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
11
NOTES
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
12
NOTES
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
E1
B
2X
D3
2X
E4
PIN ONE ID
M
aaa
D A
NOTES:
D
M
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2X
b1
D1
aaa
D A
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
E
A
E5
E3
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
EXPOSED
HEATSINK AREA
PIN 1
PIN 2
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.98
0.99
1.02
10.57
9.60
7.37
0.41
11.07
6.04
1.68
3.81
1.47
5.87
MAX
2.08
1.09
1.07
10.77
9.70
8.13
0.61
11.28
6.15
1.88
4.57
1.68
5.97
A
A1
A2
D
.078
.039
.040
.416
.378
.290
.016
.436
.238
.066
.150
.058
.231
.082
.043
.042
.424
.382
.320
.024
.444
.242
.074
.180
.066
.235
D2
D1
D2
D3
E
E1
E2
E3
E4
E5
F
PIN 3
BOTTOM VIEW
.025 BSC
0.64 BSC
b1
c1
aaa
.193
.007
.199
.011
4.90
0.18
5.06
0.28
F
.004
0.10
ZONE J
DATUM
PLANE
c1
H
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
A1
2X
E2
E5
A2
D
NOTE 7
CASE 1265-08
ISSUE H
TO-270-2
PLASTIC
MRF6S9060NR1(MR1)
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
14
A
E1
B
r1
C A B
2X
M
aaa
DRAIN ID
PIN 3
GATE
LEAD
DRAIN
LEAD
D1
2X b1
D
1
aaa
M
C A
2
NOTE 8
E
E2
VIEW Y-Y
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
F
ZONE "J"
DATUM
PLANE
c1
H
A
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
A1
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
A2
E2
SEATING
PLANE
C
Y
Y
7
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.54
0.99
1.02
MAX
2.64
1.09
1.07
23.67
A
A1
A2
D
.100
.039
.040
.928
.104
.043
.042
STYLE 1:
.932 23.57
PIN 1. DRAIN
2. GATE
3. SOURCE
.810 BSC
20.57 BSC
D1
E
.438
.248
.241
.442
.252
.245
11.12
6.30
6.12
11.23
6.40
6.22
E1
E2
F
.025 BSC
0.64 BSC
CASE 1337-03
ISSUE C
b1
c1
r1
.193
.007
.063
.199
.011
.068
4.90
.18
1.60
5.05
.28
1.73
TO-272-2
aaa
.004
.10
PLASTIC
MRF6S9060NBR1(MBR1)
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
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Document Number: MRF6S9060
Rev. 1, 6/2005
相关型号：
S16XXXH
The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology.
STMICROELECTR
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