S16XXXH [STMICROELECTRONICS]
The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology.; 该S16xxxH系列SCR的使用高性能MESA玻璃PNPN技术。
| 型号： | S16XXXH |
| 厂家： | 
ST |
| 描述： | The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. |
| 文件： | 总5页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S16xxxH
SCR
FEATURES
IT(RMS) = 16A
VDRM = 200V to 800V
High surge current capability
K
A
G
DESCRIPTION
The S16xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications.
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
Tc= 90°C
Tc= 90°C
16
A
(180° conductionangle)
IT(AV)
ITSM
Average on-state current
(180° conductionangle)
10
A
A
Non repetitive surge peak on-state current
(T initial = 25°C )
j
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
175
160
128
100
I2t
A2s
I2t Value for fusing
Critical rate of rise of on-state current
dI/dt
A/µs
IG = 100 mA
diG /dt = 1 A/µs.
Storage and operating junction temperature range
Tstg
Tj
- 40, + 150
- 40, + 125
°C
°C
Maximum lead temperature for soldering during 10s at
4.5mm from case
Tl
260
Voltage
Symbol
Parameter
Unit
B
D
M
N
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
200
400
600
800
V
Januaryr 1995
1/5
S16xxxH
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case for DC
2.2
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs)
IGM = 4A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Sensitivity
Unit
Symbol
Test Conditions
10
10
25
16
IGT
VD=12V (DC) RL=33Ω
Tj= 25°C MIN
MAX
20
50
mA
VGT
VGD
tgt
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
Tj= 25°C MAX
Tj= 125°C MIN
Tj= 25°C TYP
1.5
0.2
2
V
V
VD=VDRM ITM= 3 x IT(AV
)
µs
dIG/dt = 0.8A/µs IG = 90mA
IT= 250mA Gate open
IG=1.2 IGT
IH
IL
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 110°C MAX
Tj= 110°C MIN
Tj= 110°C MAX
50
100
200
mA
mA
V
100
VTM
ITM= 32A tp= 380µs
1.6
10
2
IDRM
IRRM
VD = VDRM
VR = VRRM
µA
mA
V/µs
µs
dV/dt
tq
VD=67%VDRM Gate open
400
500
ITM= 3 x IT(AV) VR=35V
100
dI/dt=25A/µs tp=100µs
dV/dt=25V/µs
VD= 67%VDRM
ORDERING INFORMATION
S 16 16 M H
PACKAGE :
H = TO220 Non-insulated
SCR MESA GLASS
CURRENT
VOLTAGE
SENSITIVITY
2/5
S16xxxH
Fig.1 : Maximum average power dissipation ver-
sus averageon-state current.
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W)
16
P (W)
Tcase (oC)
-85
16
14
12
10
8
Rth = 0o C/W
O
360
1o C/W
2o C/W
4o C/W -95
14
DC
12
= 180o
10
=
120o
8
6
4
2
0
-105
= 180o
= 90o
6
=
60o
4
-115
=
30o
2
I
(A)
T(AV)
Tamb (oC)
0
-125
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100 120 140
Fig.3 : Average on-state current versus case tem-
perature.
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
I
(A)
T(AV)
20
18
16
14
12
10
8
DC
Zth(j-c)
0.1
Zth(j-a)
= 180o
6
4
Tcase (oC)
2
tp(s)
1E+2 5E+2
0.01
1E-3
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1E-2
1E-1
1E+0
1E+1
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
200
150
100
50
Tj initial = 25oC
2.6
2.4
2.2
2.0
Igt
1.8
1.6
1.4
1.2
1.0
Ih
0.8
0.6
0.4
Number of cycles
10
Tj(oC)
0
-40 -20
0
20
40
60
80 100 120 140
1
100
1000
3/5
S16xxxH
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp ≤ 10ms, and
correspondingvalue of I2t.
Fig.8 : On-statecharacteristics(maximum values).
2
2
I
(A). I t (A s)
I
(A)
TSM
TM
200
100
1000
Tj initial = 25oC
Tj initial
25oC
I
Tj max
TSM
10
Tj max
Vto =0.90V
Rt =0.020
2
I
t
V
(V)
TM
tp(ms)
1
100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1
10
4/5
S16xxxH
PACKAGE MECHANICAL DATA
TO220 Non-insulated (Plastic)
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
REF.
A
B
C
D
F
G
H
I
10.3
0.406
A
H
6.3
6.5 0.248 0.256
G
J
9.1
0.358
I
B
C
12.7
0.500
4.2
0.165
0.118
3.0
L
O
P
4.5
4.7
0.177 0.185
0.139 0.144
0.047 0.051
0.035
F
3.53 3.66
D
J
1.2
1.3
0.9
L
N1
M
M
N
2.7
0.106
0.100
N
5.3
0.209
N1 2.54
O
P
1.2
1.4
0.047 0.055
0.045
1.15
Marking : type number
Weight : 1.8 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized foruse as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
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