MBRF1060C [MOSPEC]
Full Plastic Dual Schottky Barrier Power Rectifiers;
| 型号： | MBRF1060C |
| 厂家： | 
MOSPEC SEMICONDUCTOR |
| 描述： | Full Plastic Dual Schottky Barrier Power Rectifiers |
| 文件： | 总2页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSPEC
MBRF1030C Thru MBRF1060C
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
SCHOTTKY BARRIER
RECTIFIERS
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
Features
10 AMPERES
30-60 VOLTS
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 175℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
ITO-220AB
Mecnanical Data
＊Case :JEDEC ITO-220AB molded plastic body
＊Termals:Plated lead,solderable per MIL-STD-750, Method 2026
＊Polarity:As marked
＊Mounting Torqure: 5 in-lbs. max
＊Weight:1.7 g approx.
＊High temperature soldering guaranteed 260℃/10 seconds
＊In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
MBRF10
Characteristic
Symbol
Unit
MILLIMETERS
30C 35C 40C 45C 50C 60C
DIM
MIN
MAX
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
14.90
13.35
10.00
6.55
2.65
1.55
1.15
0.55
2.50
3.00
1.10
0.55
4.40
1.15
3.35
2.65
3.15
15.15
13.55
10.10
6.65
2.75
1.65
1.25
0.65
2.60
3.20
1.20
0.65
4.60
1.25
3.45
2.75
3.25
30
35
25
40
28
45
32
50
35
60
42
V
RMS Reverse Voltage
VR(RMS) 21
V
A
Average Rectifier Forward Current
Total Device (Rated VR),TC=100℃
5.0
10
IF(AV)
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
10
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
IFSM
100
A
Operating and Storage Junction
Temperature Range
℃
TJ , TSTG
-65 to +175
ELECTRIAL CHARACTERISTICS
MBRF10
Characteristic
Symbol
Unit
30C 35C 40C 45C 50C 60C
Maximum Instantaneous Forward Voltage
( IF =5 Amp TC = 25℃)
( IF =5 Amp TC = 125℃)
VF
0.65
0.56
0.75
0.65
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
IR
0.01
20
mA
Typical Thermal Resistance junction to
case
℃/w
Rθ jc
2.8
MBRF1030C Thru MBRF1060C
FIG-1 FORWARD CURRENT DERATING CURVE
FIG-2 TYPICAL FORWARD CHARACTERISITICS
MBRF1030C-MBRF1045C
MBRF1050C-MBRF1060C
CASE TEMPERATURE (℃)
FORWARD VOLTAGE (Volts)
FIG-3 TYPICAL REVERSE CHARACTERISTICS
FIG-4 TYPICAL JUNCTION CAPACITANCE
MBRF1050C-MBRF1060C
MBRF1030C-MBRF1045C
MBRF1030C-MBRF1045
MBRF1050C-MBRF1060C
PERCENT OF RATED REVERSE VOLTAGE (﹪)
REVERSE VOLTAGE (Volts)
FIG-5 PEAK FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
相关型号：
MBRF1060CT-JT
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB, ALTERNATE ITO-220AB, 3 PIN
DIODES
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