MBRF1060CT [HY]
SCHOTTKY BARRIER RECTIFIERS; 肖特基势垒整流器器
| 型号： | MBRF1060CT |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRF1030CT thru MBRF10100CT
REVERSE VOLTAGE - 30 to 100Volts
FORWARD CURRENT - 10.0 Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
ITO-220AB
●Metal of silicon rectifier , majority carrier conduction
.138(3.5)
.189(4.8)
●Guard ring for transient protection
●Low power loss,high efficiency
●High current capability,low VF
.122(3.1)
.173(4.4)
.406(10.3)
.386(9.8)
.118(3.0)
.102(2.6)
.118(3.0)
.106(2.7)
●High surge capacity
●Plastic package has UL flammability
classification 94V-0
.610(15.5)
.571(14.5)
●For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
.157(4.0)
.142(3.6)
.071(1.8)
.055(1.4)
.571(14.5)
.531(13.5)
MECHANICAL DATA
●Case: ITO-220AB molded plastic
●Polarity: As marked on the body
●Weight: 0.08ounces,2.24 grams
●Mounting position :Any
.114(2.9)
.098(2.5)
.059(1.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
.030(0.76)
.020(0.51)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBRF
1030CT
MBRF
1040CT
MBRF
1050CT
MBRF
1060CT
MBRF
1080CT
MBRF
10100CT
SYMBOL
UNIT
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
V
V
V
Maximum DC Blocking Voltage
100
Maximum Average Forward
I(AV)
10.0
A
Rectified Current ( See Fig.1)
Peak Forward Surge Current
IFSM
125
A
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
0.70
0.57
0.80
0.70
0.80
0.65
0.90
0.75
0.1
0.85
Peak Forward Voltage (Note1)
IF=5A @TJ=25℃
IF=5A @TJ=125℃
IF=10A @TJ=25℃
IF=10A @TJ=125℃
@TJ=25℃
0.75
0.95
0.85
VF
IR
V
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
mA
15
@TJ=125℃
170
220
300
3.0
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
CJ
RθJC
TJ
pF
℃/W
℃
3.0
-55 to +150
-55 to +175
TSTG
℃
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
~ 246 ~
RATING AND CHARACTERTIC CURVES
MBRF1030CT thru MBRF10100CT
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
FIG. 1 – FORWARD CURRENT DERATING CURVE
300
10.0
250
PULSE WIDTH 8.3 ms
8.0
6.0
4.0
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
200
150
100
2.0
50
0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75
100
125
150
175
1
10
20
50
100
2
5
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE (℃)
FIG.4-TYPICAL FORWARD CHARACTERISTICS
FIG.3-TYPICAL REVER CHARACTERISTICS
100
1000
100
10
MBRF1030CT - MBRF1060CT
MBRF1080CT - MBRF10100CT
MBRF1030CT -
MBRF1040CT
10
MBRF1050CT -
MBRF1060CT
TJ=125℃
1.0
MBRF1080CT -
MBRF10100CT
1.0
0.1
TJ=75℃
TJ=25℃
0.1
TJ = 25°C
PULSE WIDTH 300us
2% DUTY CYCLE
0.01
0
20
40
60
80
100
120
140
0.5 0.6
0.8
1.0
0.1 0.2 0.3 0.4
0.7
0.9
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5 – TYPICAL JUNCTION CAPACITANCE
10000
TJ = 25°C f = 1 MHz
1000
MBRF1080CT - MBRF10100CT
MBRF1050CT - MBRF1060CT
MBRF1030CT - MBRF1040CT
100
0.1
1
4
10
100
REVERSE VOLTAGE ,VOLTS
~ 247 ~
相关型号：
MBRF1060CT-JT
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB, ALTERNATE ITO-220AB, 3 PIN
DIODES
MBRF1060CTG
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB, TO-220F-AB, 3 PIN
SURGE
MBRF1060CTL
Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
LITTELFUSE
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