RM800DG-90F [MITSUBISHI]
HIGH VOLTAGE DIODE MODULES; 高压二极管模块
| 型号： | RM800DG-90F |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH VOLTAGE DIODE MODULES |
| 文件： | 总5页 (文件大小：563K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< HIGH VOLTAGE DIODE MODULES >
RM800DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
RM800DG-90F
IF····································································800A
VRRM·························································· 4500V
2-element in a Pack
High insulated Type
Soft Recovery Diode
AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
December 2012
HVM-2026-B.doc
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< HIGH VOLTAGE DIODE MODULES >
RM800DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
MAXIMUM RATINGS
Symbol
VRRM
Item
Conditions
Ratings
Unit
V
Tj = −40…+125°C
Tj = −50°C
4500
4400
Repetitive peak reverse voltage
IF
Forward current
DC, Tc = 65°C
800
A
kA
kA2s
W
IFSM
Surge forward current
6.5
Tj_start = 125°C, tp = 10 ms, Half-sine wave, VR = 0 V
I2
Surge current load integral
Maximum power dissipation
Isolation voltage
211
t
Ptot
Viso
Ve
Tc = 25°C
4160
RMS, sinusoidal, f = 60 Hz, t = 1 min.
RMS, sinusoidal, f = 60 Hz, QPD ≤ 10 pC
10200
V
Partial discharge extinction voltage
Junction temperature
3500
V
Tj
−50 ~ +150
−50 ~ +125
−55 ~ +125
°C
°C
°C
Tjop
Tstg
Operating junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
Limits
Symbol
IRRM
VFM
trr
Item
Conditions
Unit
mA
V
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
Tj = 25°C
1.0
—
Repetitive reverse current
Forward voltage
VRM = VRRM
IF = 800 A
Tj = 125°C
3.0
Tj = 25°C
2.55
2.85
0.70
0.90
700
760
660
1040
0.96
1.50
1.10
1.70
—
Tj = 125°C
3.45
—
Tj = 25°C
Reverse recovery time
Reverse recovery current
Revers0He recovery charge
Reverse recovery energy (Note 1)
Reverse recovery energy
µs
A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
—
VCC = 2800 V
IF = 800 A
—
Irr
—
−di/dt = 2600 A/µs @ Tj = 25°C
−di/dt = 2400 A/µs @ Tj = 125°C
—
Qrr
µC
J
—
—
Erec(10%)
Erec
Ls = 150 nH
—
Inductive load
—
J
—
THERMAL CHARACTERISTICS
Limits
Typ
—
Symbol
Rth(j-c)
Rth(c-s)
Item
Conditions
Unit
Min
—
Max
30.0
Thermal resistance
Junction to Case (per 1/2 module)
K/kW
Case to heat sink, grease = 1 W/m·k
(c-s) = 100 µm (per 1/2 module)
Contact thermal resistance
—
24.0
—
K/kW
D
MECHANICAL CHARACTERISTICS
Symbol Item
Limits
Typ
—
Conditions
Unit
Min
7.0
3.0
—
Max
22.0
6.0
—
Mt
M8 : Main terminals screw
M6 : Mounting screw
N·m
N·m
kg
Mounting torque
Ms
—
m
Mass
1.0
—
CTI
da
Comparative tracking index
Clearance
600
26.0
56.0
—
—
—
—
—
mm
mm
nH
ds
Creepage distance
Parasitic stray inductance
Internal lead resistance
—
—
LP AK
RAA’+KK’
22.0
0.14
—
Tc = 25°C
—
—
mΩ
Note 1.
Note 2.
Erec(10%) are the integral of 0.1VR x 0.1IF x dt.
Definition of all items is according to IEC 60747, unless otherwise specified.
December 2012
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< HIGH VOLTAGE DIODE MODULES >
RM800DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
PERFORMANCE CURVES
FORWARD CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY ENERGY
CHARACTERISTICS (TYPICAL)
1600
1200
4
3
2
1
0
VCC = 2800V
-di/dt = 2400 A/µs @125°C
LS = 150nH, T = 125°C
j
Inductive load
T = 25°C
j
Tj = 125°C
Erec
800
400
0
0
1
2
3
4
5
0
400
800
1200
1600
Forward Voltage [V]
Forward Current [A]
REVERSE RECOVERY
REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
SAFE OPERATING AREA (RRSOA)
100
10
1
10000
1000
100
3200
VCC = 2800V
VCC 3200V, -di/dt < 4kA/µs
-di/dt = 2400 A/µs @125°C
Tj = 125°C
LS = 150nH, Tj = 125°C
Inductive load
2400
1600
800
0
Irr
trr
0.1
10
100
1000
10000
0
1000
2000
3000
4000
5000
Forward Current [A]
Reverse Voltage [V]
December 2012
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< HIGH VOLTAGE DIODE MODULES >
RM800DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
PERFORMANCE CURVES
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
t
Rt h(j-c) = 30.0K/kW
n
(t )
i
1exp
Zth( jc )
R
i
1
0.8
0.6
0.4
0.2
0
i1
1
2
3
4
Ri [K/kW]
ti [sec]
0.0055
0.0001
0.2360
0.0131
0.4680
0.0878
0.2905
0.6247
0.001
0.01
0.1
1
10
Time [s]
December 2012
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< HIGH VOLTAGE DIODE MODULES >
RM800DG-90F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
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