RM1500DC-66F [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | RM1500DC-66F |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI HVDi MODULES
Prepared by
Approd y
S. Iura
Revision: 1.0
RM1500DC-66F
H. Yamaguchi : Apr. 2009
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
RM1500DC-66F
N/A
● IF ………………………
2 x 1500 A
3300 V
● Vrrm ……………………
● 2-element in a Pack
● Insulated Type
● Soft Recovery Diode
● AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
HVDi (High Voltage Diode) MODULES
HVM-2023
1 of 5
MITSUBISHI HVDi MODULES
RM1500DC-66F
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
MAXIMUM RATINGS
Symbol
Conditions
Tj = −40…+150°C
Ratings
3300
Unit
V
Item
VRRM
Repetitive peak reverse voltage
Tj = −50°C
3200
3300
Tj = −40…+150°C
VRSM
V
Non-repetitive peak reverse voltage
Collector current
Tj = −50°C
3200
IF
DC, Tc = 25°C
1500
A
A
IFM
IFSM
I2t
Pulse (Note 1)
3000
Tj = 125°C, VR = 0 V, t = 10 ms
Tj = 125°C, VR = 0 V, t = 10 ms
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
14.0
kA
kA2s
V
Surge (non-repetitive) forward current
Surge forward current integral
Isolation voltage
980
Viso
Ve
6000
2600
V
Partial discharge extinction voltage
Junction temperature
Tj
−50 ~ +150
−50 ~ +150
−55 ~ +150
°C
°C
°C
Top
Tstg
Operating temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Unit
mA
Item
Conditions
Tj = 25°C
Min
—
—
—
—
—
—
—
Typ
—
Max
2.0
—
IRRM
Repetitive reverse current
VRM = VRRM
2.0
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
12.0
2.20
2.40
2.35
0.55
—
—
VFM
V
Forward voltage
IF = 1500 A (Note 2)
2.90
—
—
trr
µs
Reverse recovery time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.75
0.85
1200
1450
1500
1050
1700
2000
1.15
1.85
2.10
1.30
2.10
2.40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
VCC = 1800 V
IC = 1500 A
VGE = ±15 V
Ls = 100 nH
Irr
A
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Reverse recovery energy
Qrr
µC
J/P
J/P
−diF/dt =
5500 A/µs @ Tj = 25°C
5200 A/µs @ Tj = 125°C
5100 A/µs @ Tj = 150°C
(Note 3)
(Note 4)
Erec(10%)
Inductive load
Erec
HVDi (High Voltage Diode) MODULES
HVM-2023
2 of 5
MITSUBISHI HVDi MODULES
RM1500DC-66F
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
THERMAL CHARACTERISTICS
Limits
Symbol
Item
Conditions
Unit
Min
—
Typ
—
Max
16.0
Rth(j-c)
Rth(c-f)
Thermal resistance
Contact thermal resistance
Junction to Case, 1/2 module
K/kW
K/kW
Case to Fin, λgrease = 1W/m·K
—
17.5
—
D(c-f) = 100 µm, 1/2 module
MECHANICAL CHARACTERISTICS
Limits
Typ
—
Symbol
Mt
Item
Conditions
Unit
Min
7.0
Max
22.0
M8: Main terminals screw
M6: Mounting screw
N·m
N·m
kg
Mounting torque
Mass
Ms
3.0
—
—
0.8
—
6.0
—
—
—
—
—
—
m
CTI
da
Comparative tracking index
Clearance
600
19.5
32.0
—
—
—
mm
mm
nH
ds
Creepage distance
—
LP AK
RAA’+KK’
Parasitic stray inductance
Internal lead resistance
1/2 module
33
Tc = 25°C, 1/2 module
—
0.24
mΩ
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (150°C).
Note 2. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note 3. Erec(10%) is the integral of 0.1VR x 0.1IF x dt.
Note 4. The integration range of Erec according to IEC 60747.
HVDi (High Voltage Diode) MODULES
HVM-2023
3 of 5
MITSUBISHI HVDi MODULES
RM1500DC-66F
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
PERFORMANCE CURVES
FORWARD CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
3000
2500
2000
1500
1000
500
4
VCC = 1800V, LS = 100nH
Inductive load
Tj = 150°C
3.5
3
Tj = 125°C
Tj = 150°C
Tj = 25°C
2.5
Tj = 125°C
2
1.5
1
0.5
0
0
0
1
2
3
4
5
0
500 1000 1500 2000 2500 3000
Forward Current [A]
Forward Voltage [V]
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
4
VCC = 1800V, LS = 100nH
Inductive load
3.5
3
2.5
2
Tj = 150°C
1.5
Tj = 125°C
1
0.5
0
0
1000 2000 3000 4000 5000 6000
Current Slope [A/µs]
HVDi (High Voltage Diode) MODULES
HVM-2023
4 of 5
MITSUBISHI HVDi MODULES
RM1500DC-66F
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Modules
PERFORMANCE CURVES
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY SAFE OPERATING AREA
(TYPICAL)
100
10
1
10000
4000
VCC = 1800V, LS = 100nH
Inductive load
VCC 2500V, di/dt < 9kA/µs
≤
Tj = 150°C
Tj = 150°C
Tj = 125°C
Irr
3000
2000
1000
0
1000
100
10
Tj = 150°C
trr
Tj = 125°C
0.1
100
1000
Forward Current [A]
10000
0
1000
2000
3000
4000
Reverse Voltage [V]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
⎛
⎜
⎞
⎟
Rth(j-c)R = 16.0K/kW
t
⎧
⎪
⎨
⎩
⎫
⎪
⎬
n
−τ i
⎜
⎝
⎟
⎠
(t ) =
1−exp
∑
Zth( j−c )
Ri
1
0.8
0.6
0.4
0.2
0
i=1
⎪
⎪
⎭
1
2
3
4
Ri [K/kW] :
0.0059
0.0002
0.0978
0.0074
0.6571
0.0732
0.2392
i [sec] :
τ
0.4488
0.001
0.01
0.1
1
10
Time [s]
HVDi (High Voltage Diode) MODULES
HVM-2023
5 of 5
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