RM1500HE-66F [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | RM1500HE-66F |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< HIGH VOLTAGE DIODE MODULES >
RM1500HE-66F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
RM1500HE-66F
I
V
F···········································································1500A
RRM···································································3300V
1-element in a Pack
Insulated Type
Soft Recovery Diode
AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
June 2013
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< HIGH VOLTAGE DIODE MODULES >
RM1500HE-66F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
MAXIMUM RATINGS
Symbol
VRRM
Item
Conditions
Ratings
3300
Unit
V
Tj = −40 … +150°C
Tj = −50°C
Repetitive peak reverse voltage
3200
3300
Tj = −40 … +150°C
Tj = −50°C
VRSM
V
Non-repetitive peak reverse voltage
Forward current
3200
IF
DC, Tc = 75°C
Pulse (Note 1)
1500
A
A
IFRM
3000
IFSM
Surge (non-repetitive) forward current
Surge current load integral
Isolation voltage
12000
A
T
j_start = 25°C, tp = 8.3 ms, Half-sine wave, VR = 0 V
I2
598
kA2s
V
t
Viso
Ve
RMS, sinusoidal, f = 60 Hz, t = 1 min.
6000
Partial discharge extinction voltage
Junction temperature
RMS, sinusoidal, f = 60 Hz, QPD ≤ 10 pC
2400
V
Tj
−50 ~ +150
−50 ~ +150
−55 ~ +150
°C
°C
°C
Tjop
Tstg
Operating junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
Limits
Symbol
IRRM
VFM
trr
Item
Repetitive reverse current
Forward voltage
Conditions
Unit
mA
V
Min
—
—
—
—
—
—
—
—
—
Typ
—
Max
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
5.0
—
VRM = VRRM
12.0
2.60
2.70
—
3.20
—
IF = 1500 A(Note 2)
VCC = 1500 V
IF = 1500 A
Ls = 100 nH
—
Reverse recovery time
Reverse recovery charge
µs
0.9
—
—
—
Qrr
µC
1300
—
—
−diF/dt = 4400 A/µs @ Tj = 150°C
—
Erec
Reverse recovery energy (Note 3)
J
Tj = 150°C
—
1.35
—
Inductive load
THERMAL CHARACTERISTICS
Limits
Typ
—
Symbol
Rth(j-c)
Rth(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Unit
Min
—
Max
14.5
Junction to Case
K/kW
Case to heat sink, grease = 1 W/m·k
D(c-s) = 100 µm
—
15.0
—
K/kW
MECHANICAL CHARACTERISTICS
Limits
Typ
—
Symbol
Item
Conditions
Unit
Min
6.7
2.9
—
Max
10.8
3.4
—
Mt
M8 : Main terminals screw
M6 : Mounting screw
N·m
N·m
kg
Mounting torque
Mass
Ms
—
m
0.66
—
CTI
da
Comparative tracking index
Clearance
600
19.5
32.0
—
—
—
—
—
mm
mm
nH
ds
Creepage distance
—
—
LP AK
RAA’+KK’
Parasitic stray inductance
Internal lead resistance
17.0
0.16
—
—
—
mΩ
Tc = 25°C
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (150°C).
Note 2. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note 3. Erec is the integral of 0.1VR x 0.1IF x dt.
June 2013
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< HIGH VOLTAGE DIODE MODULES >
RM1500HE-66F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
PERFORMANCE CURVES
FORWARD CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY ENERGY
CHARACTERISTICS (TYPICAL)
3000
2.0
VCC = 1500V, LS = 100nH
T = 150 °C Inductive load
,
j
Tj = 150°C
2500
1.6
1.2
0.8
0.4
0.0
2000
Tj = 25°C
1500
1000
500
0
0
1
2
3
4
0
500 1000 1500 2000 2500 3000
Forward Current [A]
Forward Voltage [V]
REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
2.5
100
10000
1000
100
VCC = 1500V, LS = 100nH
Tj = 150°C, Inductive load
VCC = 1500V, LS = 100nH
Tj = 150°C, Inductive load
Irr
2.0
1.5
1.0
0.5
0.0
10
1
trr
0.1
10
10
100
1000
10000
Forward Current [A]
0
2000
4000
6000
8000
Current Slope [A/µs]
June 2013
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< HIGH VOLTAGE DIODE MODULES >
RM1500HE-66F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
PERFORMANCE CURVES
REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
3000
V
CC
2500V, di/dt < 6.8kA/µs
Tj = 150°C, Ls = 100nH
2500
2000
1500
1000
500
0
0
500 1000 1500 2000 2500 3000
Reverse Voltage [V]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
Rth(j-c) = 14.5K/kW
1
0.8
0.6
0.4
0.2
0
t
n
i
(t )
1exp
Zth( jc )
R
i
i1
1
2
3
4
Ri [K/kW]
0.0096
0.0001
0.1893
0.0058
0.4044
0.0602
0.3967
0.3512
i [sec]
0.001
0.01
0.1
1
10
Time [s]
June 2013
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< HIGH VOLTAGE DIODE MODULES >
RM1500HE-66F
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Modules
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