RA07M3340M-E01 [MITSUBISHI]
MITSUBISHI RF MOSFET MODULE; 三菱RF MOSFET模块
| 型号： | RA07M3340M-E01 |
| 厂家： | 
Mitsubishi Group |
| 描述： | MITSUBISHI RF MOSFET MODULE |
| 文件： | 总9页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF MOSFET MODULE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
DESCRIPTION
BLOCK DIAGRAM
The RA07M3340M is a 7-watt RF MOSFET Amplifier Module
2
3
for 7.2-volt portable radios that operate in the 330- to 400-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
1
4
5
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
1
RF Input (Pin)
2
3
4
5
Gate Voltage (VGG), Power Control
Drain Voltage (VDD), Battery
RF Output (Pout)
FEATURES
• Enhancement-Mode MOSFET Transistors
RF Ground (Case)
(IDD@0 @ VDD=7.2V, VGG=0V)
PACKAGE CODE: H46S
• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• hT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
RA07M3340M-E01
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA07M3340M-01
(Japan - packed without desiccator)
RA 07M3340M
25 April 2003
MITSUBISHI ELECTRIC
1/9
MITSUBISHI RF POWER MODULE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
VGG
Pin
Drain Voltage
Gate Voltage
Input Power
Output Power
VGG<3.5V
9.2
V
V
VDD<7.2V, Pin=0mW
4
70
mW
W
f=330-400MHz,
ZG=ZL=50W
Pout
10
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
-30 to +90
-40 to +110
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50W, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP MAX
UNIT
f
Frequency Range
Output Power
Total Efficiency
2nd Harmonic
Input VSWR
330
7
400
MHz
W
Pout
hT
VDD=7.2V,VGG=3.5V, Pin=50mW
40
%
Pout=6.5W (VGG control),
VDD=7.2V,
2fo
r in
IGG
-25
4:1
dBc
—
Pin=50mW
Gate Current
1
mA
VDD=4.0-9.2V, Pin=25-70mW, Pout<8W (VGG control),
Load VSWR=4:1
—
—
Stability
No parasitic oscillation
—
—
VDD=9.2V, Pin=50mW, Pout=7.0W (VGG control),
Load VSWR=20:1
No degradation or
destroy
Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
RA 07M3340M
25 April 2003
MITSUBISHI ELECTRIC
2/9
MITSUBISHI RF POWER MODULE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50W, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
2 , 3rd HARMONICS versus FREQUENCY
nd
10
100
90
80
70
60
50
40
30
20
10
0
-20
-30
-40
Pout @VGG=3.5V
VDD=7.2V
9
8
7
6
Pin=50mW
2nd @Pout=6.5W
h
T @Pout=6.5W
5
4
3
2
1
0
VDD=7.2V
-50
-60
Pin=50mW
r
in @Pout=6.5W
3rd @Pout=6.5W
-70
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
10
8
50
10
8
f=330MHz,
VDD =7.2V,
VGG =3.5V
f=350MHz,
VDD =7.2V,
VGG =3.5V
Pout
Pout
40
30
20
10
0
40
30
20
10
0
Gp
Gp
6
6
4
4
IDD
IDD
2
2
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
INPUT POWER P (dBm)
in
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
50
10
8
50
10
8
f=380MHz,
VDD=7.2V,
VGG=3.5V
Pout
Pout
Gp
Gp
40
30
40
30
20
10
0
6
6
f=400MHz,
VDD =7.2V,
VGG =3.5V
4
20
10
0
4
2
0
IDD
IDD
2
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POWER P (dBm)
INPUT POWER Pin(dBm)
in
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
8
6
4
2
0
16
8
6
4
2
0
f=350MHz,
VGG=3.5V,
Pin=50mW
f=330MHz,
VGG=3.5V,
Pin=50mW
14
12
10
8
14
12
10
8
Pout
Pout
IDD
IDD
6
6
4
4
2
2
0
0
2
3
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
DRAIN VOLTAGE VDD(V)
DRAIN VOLTAGE VDD(V)
RA 07M3340M
25 April 2003
MITSUBISHI ELECTRIC
3/9
MITSUBISHI RF POWER MODULE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50W, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
8
6
4
2
0
16
14
12
10
8
8
6
4
2
0
f=380MHz,
GG=3.5V,
f=400MHz,
VGG=3.5V,
Pin=50mW
V
14
12
10
8
P =50mW
in
Pout
P
out
IDD
IDD
6
6
4
4
2
2
0
0
2
3
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
DRAIN VOLTAGE VDD(V)
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
6
5
4
3
2
1
0
12
6
f=330MHz,
VDD=7.2V,
Pin=50mW
f=350MHz,
Pout
VDD =7.2V,
Pin=50mW
10
8
10
8
5
4
3
2
1
0
Pout
IDD
IDD
6
6
4
4
2
2
0
0
2
2.5
3
3.5
4
2
2.5
3
3.5
4
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
6
5
4
3
2
1
0
12
6
5
4
3
2
1
0
f=380MHz,
DD=7.2V,
P =50mW
f=400MHz,
V
10
8
10
8
VDD =7.2V,
Pin=50mW
Pout
in
Pout
IDD
IDD
6
6
4
4
2
2
0
0
2
2.5
3
3.5
4
2
2.5
3
3.5
4
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
RA 07M3340M
25 April 2003
MITSUBISHI ELECTRIC
4/9
MITSUBISHI RF POWER MODULE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
OUTLINE DRAWING (mm)
30.0 ±0.2
26.6 ±0.2
21.2 ±0.2
(1.7)
(4.4)
2-R1.5 ±0.1
5
1
2
3
4
Ø0.45 ±0.15
6.1 ±1
13.7 ±1
18.8 ±1
23.9 ±1
1 RF Input (Pin)
2 Gate Voltage (VGG
)
3 Drain Voltage (VDD
4 RF Output (Pout)
5 RF Ground (Case)
)
RA 07M3340M
25 April 2003
MITSUBISHI ELECTRIC
5/9
MITSUBISHI RF POWER MODULE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
TEST BLOCK DIAGRAM
Power
Meter
DUT
Spectrum
Analyzer
5
1
2
3
4
ZG=50W
ZL=50W
Power
Meter
Signal
Generator
Pre-
amplifier
Directional
Coupler
Directional
Coupler
Attenuator
Attenuator
Attenuator
C1
C2
-
+
+
-
DC Power
Supply VGG
DC Power
Supply VDD
C1, C2: 4700pF, 22uF in parallel
1 RF Input (Pin)
2 Gate Voltage (VGG
)
3 Drain Voltage (VDD
4 RF Output (Pout)
5 RF Ground (Case)
)
EQUIVALENT CIRCUIT
3
2
1
4
5
RA 07M3340M
25 April 2003
MITSUBISHI ELECTRIC
6/9
MITSUBISHI RF POWER MODULE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap
is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and
coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and
matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later
when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce
the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The soldering temperature must be lower than 260°C for a maximum of 10 seconds, or lower than 350°C for a maximum
of three seconds.
Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=7W, VDD=7.2V and Pin=50mW each stage transistor operating conditions are:
Pin
(W)
Pout
(W)
Rth(ch-case)
(°C/W)
IDD @ hT=40%
VDD
(V)
Stage
(A)
1st
2nd
0.05
2.0
2.0
7.0
4.5
2.4
0.55
1.85
7.2
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x R
are:
th(ch-case)
Tch1 = Tcase + (7.2V x 0.55A – 2.0W + 0.05W) x 4.5°C/W
Tch2 = Tcase + (7.2V x 1.85A - 7.0W + 2.0W) x 2.4°C/W
= Tcase + 9.0 °C
= Tcase + 20.0 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=7W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / hT ) - Pout
Pin ) of the heat sink, including the contact resistance, is:
+
Rth(case-air) = (90°C - 60°C) / (7W/40% – 7W + 0.05W) = 2.84 °C/W
When mounting the module with the thermal resistance of 2.84 °C/W, the channel temperature of each stage transistor
is:
Tch1 = Tair + 39.0 °C
Tch2 = Tair + 50.0 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
RA 07M3340M
25 April 2003
MITSUBISHI ELECTRIC
7/9
MITSUBISHI RF POWER MODULE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=2.5V, the output power and drain current increases substantially.
Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50W?
c) Is the source impedance ZG=50W?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and
can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced
mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding
those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios.
Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are
caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such
as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any
malfunction or mishap.
RA 07M3340M
25 April 2003
MITSUBISHI ELECTRIC
8/9
SALES CONTACT
JAPAN:
GERMANY:
Mitsubishi Electric Corporation
Semiconductor Sales Promotion Department
2-2-3 Marunouchi, Chiyoda-ku
Tokyo, Japan 100
Mitsubishi Electric Europe B.V.
Semiconductor
Gothaer Strasse 8
D-40880 Ratingen, Germany
Email:
Phone: +81-3-3218-4854
Fax: +81-3-3218-4861
sod.sophp@hq.melco.co.jp
Email:
semis.info@meg.mee.com
Phone: +49-2102-486-0
Fax:
+49-2102-486-3670
HONG KONG:
FRANCE:
Mitsubishi Electric Hong Kong Ltd.
Semiconductor Division
Mitsubishi Electric Europe B.V.
Semiconductor
41/F. Manulife Tower, 169 Electric Road
North Point, Hong Kong
25 Boulevard des Bouvets
F-92741 Nanterre Cedex, France
Email:
Phone: +852 2510-0555
Fax: +852 2510-9822
scdinfo@mehk.com
Email:
semis.info@meg.mee.com
Phone: +33-1-55685-668
Fax:
+33-1-55685-739
SINGAPORE:
ITALY:
Mitsubishi Electric Asia PTE Ltd
Semiconductor Division
307 Alexandra Road
Mitsubishi Electric Europe B.V.
Semiconductor
Centro Direzionale Colleoni,
Palazzo Perseo 2, Via Paracelso
I-20041 Agrate Brianza, Milano, Italy
#3-01/02 Mitsubishi Electric Building,
Singapore 159943
Email:
semicon@asia.meap.com
Email:
semis.info@meg.mee.com
Phone: +65 64 732 308
Phone: +39-039-6053-10
Fax:
+65 64 738 984
Fax:
+39-039-6053-212
TAIWAN:
U.K.:
Mitsubishi Electric Taiwan Company, Ltd.,
Semiconductor Department
9F, No. 88, Sec. 6
Mitsubishi Electric Europe B.V.
Semiconductor
Travellers Lane, Hatfield
Hertfordshire, AL10 8XB, England
Chung Shan N. Road
Taipei, Taiwan, R.O.C.
Email:
Phone: +44-1707-278-900
Fax: +44-1707-278-837
semis.info@meuk.mee.com
Email:
metwnssi@metwn.meap.com
Phone: +886-2-2836-5288
Fax:
+886-2-2833-9793
U.S.A.:
AUSTRALIA:
Mitsubishi Electric & Electronics USA, Inc.
Electronic Device Group
Mitsubishi Electric Australia,
Semiconductor Division
348 Victoria Road
1050 East Arques Avenue
Sunnyvale, CA 94085
Rydalmere, NSW 2116
Sydney, Australia
Email:
Phone: 408-730-5900
Fax: 408-737-1129
customerservice@edg.mea.com
Email: semis@meaust.meap.com
Phone: +61 2 9684-7210
+61 2 9684 7212
+61 2 9684 7214
+61 3 9262 9898
CANADA:
Mitsubishi Electric Sales Canada, Inc.
4299 14th Avenue
Fax:
+61 2 9684-7208
+61 2 9684 7245
Markham, Ontario, Canada L3R OJ2
Phone: 905-475-7728
Fax:
905-475-1918
RA 07M3340M
25 April 2003
MITSUBISHI ELECTRIC
9/9
相关型号：
RA07M4047MSA-101
Narrow Band High Power Amplifier, 400MHz Min, 470MHz Max, 1 Func, Hybrid, 30 X 9.60 MM, 5.30 MM HEIGHT, ROHS COMPLIANT PACKAGE-5
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明