RA07M4047MSA-101 [MITSUBISHI]
Narrow Band High Power Amplifier, 400MHz Min, 470MHz Max, 1 Func, Hybrid, 30 X 9.60 MM, 5.30 MM HEIGHT, ROHS COMPLIANT PACKAGE-5;
| 型号： | RA07M4047MSA-101 |
| 厂家： | 
Mitsubishi Group |
| 描述： | Narrow Band High Power Amplifier, 400MHz Min, 470MHz Max, 1 Func, Hybrid, 30 X 9.60 MM, 5.30 MM HEIGHT, ROHS COMPLIANT PACKAGE-5 高功率电源 射频 微波 |
| 文件： | 总9页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07M4047MSA
RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
BLOCK DIAGRAM
The RA07M4047MSA is a 7-watt RF MOSFET Amplifier
2
3
Module for 7.2-volt portable radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
1
4
5
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
1
RF Input (Pin)
2
3
4
5
Gate Voltage (VGG), Power Control
Drain Voltage (VDD), Battery
RF Output (Pout
)
RF Ground (Case)
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD 0 @ VDD=7.2V, VGG=0V)
• Pout>7.0W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• ηT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 9.6 x 5.3 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA07M4047MSA-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
Antistatic tray,
50 modules/tray
RA07M4047MSA-101
RA07M4047MSA
30 Jun 2010
1/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA07M4047MSA
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
VGG
Pin
Drain Voltage
Gate Voltage
Input Power
Output Power
VGG<3.5V
9.2
V
V
VDD<7.2V, Pin=0mW
4
70
mW
W
f=400-470MHz,VGG<3.5V
ZG=ZL=50Ω
Pout
10
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
-30 to +110
-40 to +110
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, Z G=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f
Frequency Range
Output Power
Total Efficiency
2nd Harmonic
3rd Harmonic
Input VSWR
400
-
-
470
-
MHz
W
Pout
ηT
7.0
VDD=7.2V,VGG=3.5V, Pin=50mW
40
-
-
-
%
2fo
3fo
ρin
-
-25
-30
4:1
-
dBc
dBc
—
Pout=6.5W (VGG control),
VDD=7.2V,
-
-
Pin=50mW
-
-
IGG
Gate Current
-
1
mA
VDD=4.0-9.2V, Pin=25-70mW, Pout<8W (VGG control),
Load VSWR=8:1
—
—
Stability
No parasitic oscillation
—
—
VDD=9.2V, Pin=50mW, Pout=7W (VGG control),
Load VSWR=20:1
Load VSWR Tolerance
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07M4047MSA
30 Jun 2010
2/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA07M4047MSA
TYPICAL PERFORMANCE (Tcase=+25°C, Z G=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
2nd, 3rd HARMONICS versus FREQUENCY
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
10
100
VDD=7.2V
VGG=3.5V
Pin=50mW
Pout
9
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
0
VDD=7.2V
VGG=3.5V
Pin=50mW
2nd
ηt
3rd
ρin
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
40
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
38
36
34
32
30
28
26
24
22
20
5.0
f=435MHz
DD=7.2V
f=400MHz
DD=7.2V
38
36
34
32
30
28
26
24
22
20
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Pout
V
V
Pout
VGG=3.5V
Gp
VGG=3.5V
Gp
IDD
IDD
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POWER PIN(dBm)
INPUT POWER PIN(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
38
36
34
32
30
28
26
24
22
20
5.0
Gp
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Pout
IDD
f=470MHz
VDD=7.2V
VGG=3.5V
-10
-5
0
5
10
15
20
INPUT POWER PIN(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
14
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14
3.5
f=400MHz
PIN=50mW
f=435MHz
PIN=50mW
VGG=3.5V
12
12
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGG=3.5V
10
10
8
8
IDD
IDD
Pout
Pout
6
6
4
2
0
4
2
0
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
DRAIN VOLTAGE VDD(V)
DRAIN VOLTAGE VDD(V)
RA07M4047MSA
30 Jun 2010
3/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA07M4047MSA
TYPICAL PERFORMANCE (Tcase=+25°C, Z G=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
14
12
10
8
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
f=470MHz
PIN=50mW
VGG=3.5V
IDD
Pout
6
4
2
0
3
4
5
6
7
8
9
10
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
3.0
12
3.0
f=400MHz
PIN=50mW
VDD=7.2V
f=435MHz
PIN=50mW
VDD=7.2V
10
8
2.5
10
8
2.5
2.0
1.5
1.0
0.5
0.0
IDD
IDD
2.0
1.5
1.0
0.5
0.0
Pout
Pout
6
6
4
4
2
2
0
0
1.0
2.0
3.0
4.0
1.0
2.0
3.0
4.0
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
3.0
f=470MHz
PIN=50mW
VDD=7.2V
10
8
2.5
2.0
1.5
1.0
0.5
0.0
IDD
Pout
6
4
2
0
1.0
2.0
3.0
4.0
GATE VOLTAGE VGG(V)
RA07M4047MSA
30 Jun 2010
4/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA07M4047MSA
OUTLINE DRAWING (mm)
1 RF Input (Pin)
2 Gate Voltage (VGG
)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA07M4047MSA
30 Jun 2010
5/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA07M4047MSA
TEST BLOCK DIAGRAM
Power
Meter
DUT
Spectrum
Analyzer
5
1
2
3
4
ZG=50Ω
ZL=50Ω
Power
Meter
Signal
Generator
Pre-
amplifier
Directional
Coupler
Directional
Coupler
Attenuator
Attenuator
Attenuator
C1
C2
-
+
+
-
DC Power
DC Power
Supply VGG
Supply VDD
C1, C2: 4700pF, 22uF in parallel
1 RF Input (Pin)
2 Gate Voltage (VGG
)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
2
1
4
5
RA07M4047MSA
30 Jun 2010
6/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA07M4047MSA
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate,
and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and
matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws
or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M2.6 screws are recommended with a tightening torque of 1.8 to 3.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The lead (terminal) must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles
in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=7.0W, VDD=7.2V and Pin=50mW each stage transistor operating conditions are:
Pin
(W)
Pout
(W)
Rth(ch-case)
(°C/W)
IDD @ ηT=40%
VDD
(V)
Stage
(A)
1st
2nd
0.05
2.0
5.4
0.69
7.2
2.0
7.0
2.9
2.43
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (7.2V x 0.69A – 2.0W + 0.05W) x 5.4°C/W
Tch2 = Tcase + (7.2V x 2.43A – 7.0W + 2.0W) x 2.9°C/W
= T case + 16.3 °C
= T case + 36.2 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and P out=7.0W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) -
Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (7.0W/40% – 7.0W + 0.05W) = 2.8 4 °C/W
When mounting the module with the thermal resistance of 2.84 °C/W, the channel temperature of each sta ge
transistor is:
T
ch1 = Tair + 46.3 °C
Tch2 = Tair + 66.2 °C
The 175°C maximum rating for the channel temperatur e ensures application under derated conditions.
RA07M4047MSA
30 Jun 2010
7/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA07M4047MSA
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=2.5V, the output power and drain current increases substantially.
Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do
not leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and
were not specifically designed for use in other applications. In particular, while these products are highly reliable
for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient
to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of
critical communications elements would include transmitters for base station applications and fixed station
applications that operate with long term continuous transmission and a higher on-off frequency during transmitting,
especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.)
to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than
90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the
worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the
module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing
line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level
also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
RA07M4047MSA
30 Jun 2010
8/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA07M4047MSA
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and
more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these materials
-
These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third
party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms,
or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein. The information described here may contain technical inaccuracies
or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage,
liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information
published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor
home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole
or in part these materials.
- If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
RA07M4047MSA
30 Jun 2010
9/9
相关型号：
©2020 ICPDF网 联系我们和版权申明