PM600CLA060 [MITSUBISHI]
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE; 智能功率模块FLAT- BASE型绝缘包装
| 型号： | PM600CLA060 |
| 厂家： | 
Mitsubishi Group |
| 描述： | INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE |
| 文件： | 总8页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
PM600CLA060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.8V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
• 3φ 600A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (Fo available from
all arm devices)
• Acoustic noise-less 45kW/55kW class inverter application
• UL Recognized
Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
172
11
2
(24)
162
6
50±0.5
50±0.5
50±0.5
+1.0
–0.5
17
14
22
28
22
28
22
12-M6 NUTS
6
1 2
1 1
1 0
9
8
7
9.08
50
50
31.84
31.84
31.84
3.22
3-2.54
3.22
3-2.54
3.22
3-2.54
13
16 17
20
19
21
24 25
28
27
29
3233
36
35
14 15 18
22 23 26
30 31 34
21
3-2.54
21
3-2.54
21
3-2.54
53.75
1
50
53.75
3.75
8-φ5.5
MOUNTING HOLES
2
3
4
5
6
12
(SCREWING DEPTH)
12
17
12
17
12
17
12
17
12
17
12
17
Terminal code
1. N 7. W 13. VUPC 19. UN
2. P 8. W 14. UPFO 20. VUN1 26. VNFO 32. VWP1
3. N 9. V 15. UP 21. VVPC 27. VN 33. VWNC
4. P 10. V 16. VUP1 22. VPFO 28. VVN1 34. WNFO
5. N 11. U 17. VUNC 23. VP 29. VWPC 35. WN
6-φ2.5
24- 0.64
25. VVNC 31. WP
6. P 12. U 18. UNFO 24. VVP1 30. WPFO 36. VWN1
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
UN
V
UN1
UP
VUP1
WN
V
WN1
WP
V
WP1
VN
V
VN1
VP
VVP1
VWNC
W
NFO
VWPC
WPFO
VVNC
VNFO
VVPC
VPFO
VUNC
UNFO
VUPC
UPFO
1.5k
1.5k
1.5k
1.5k
1.5k
1.5k
Gnd In Fo Vcc
Gnd In Fo
Vcc
Gnd In Fo Vcc
Gnd In Fo
Vcc
Gnd In Fo Vcc
Gnd In Fo
Vcc
Gnd Si Out
OT
Gnd
Si Out
OT
Gnd Si Out
OT
Gnd
Si Out
OT
Gnd Si Out
OT
Gnd
Si Out
OT
N
W
P
N
V
P
N
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
±IC
Parameter
Collector-Emitter Voltage
Collector Current
Condition
Ratings
600
Unit
V
VD = 15V, VCIN = 15V
TC = 25°C
600
A
±ICP
PC
Collector Current (Peak)
Collector Dissipation
Junction Temperature
TC = 25°C
1200
A
TC = 25°C
(Note-1)
1785
W
°C
Tj
–20 ~ +150
CONTROL PART
Symbol
Parameter
Supply Voltage
Condition
Ratings
20
Unit
V
Applied between : VUP1-VUPC, VVP1-VVPC, VWP1-VWPC
VUN1-VUNC, VVN1-VVNC, VWN1-VWNC
VD
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN-VUNC, VN-VVNC, WN-VWNC
VCIN
VFO
IFO
20
20
20
V
V
Input Voltage
Applied between : UPFO-VUPC, VPFO-VVPC, WPFO-VWPC
UNFO-VUNC, VNFO-VVNC, WNFO-VWNC
Sink current at UPFO, VPFO, WPFO, UNFO, VNFO, WNFO
terminals
Fault Output Supply Voltage
Fault Output Current
mA
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Ratings
Unit
Symbol
Parameter
Condition
Supply Voltage Protected by
SC
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
400
V
VCC(PROT)
VCC(surge) Supply Voltage (Surge)
Applied between : P-N, Surge value
500
–40 ~ +125
2500
V
Storage Temperature
Isolation Voltage
Tstg
Viso
°C
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Vrms
THERMAL RESISTANCES
Limits
Typ.
—
Condition
Symbol
Unit
Parameter
Min.
—
Max.
0.07
0.11
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
Rth(j-c)Q
Rth(j-c)F
Junction to case Thermal
Resistances
(Note-1)
—
—
°C/W
Rth(c-f)
0.014
Contact Thermal Resistance
—
—
(Note-1)
(Note-1) Tc measurement point is just under the chip.
If you use this value, Rth(f-a) should be measured just under the chips.
Table 1: Tc (under the chip) measurement point is below.
(Unit : mm)
WN
arm
UP
VP
WP
UN
VN
IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi
axis
30.5
82.8
20.4
82.8
80.5
82.8
70.4 130.5 120.4 19.4
29.6
27.2
69.4
27.2
79.6 119.4 129.6
X
Y
82.8
82.8
82.8
27.2
27.2
27.2
27.2
7
13
Name
plate
side
Bottom
view
Y
X
6
1
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
1.7
1.8
2.6
1.0
0.2
0.4
2.2
0.6
—
Unit
Condition
Symbol
VCE(sat)
Parameter
Collector-Emitter
Min.
Max.
2.2
2.3
3.7
2.4
0.4
1.0
3.5
1.1
1
—
—
—
0.5
—
—
—
—
—
—
VD = 15V, IC = 600A
VCIN = 0V
Tj = 25°C
V
V
Saturation Voltage
(Fig. 1) Tj = 125°C
–IC = 600A, VD = 15V, VCIN = 15V
(Fig. 2)
VEC
ton
FWDi Forward Voltage
VD = 15V, VCIN = 0V↔15V
VCC = 300V, IC = 600A
Tj = 125°C
trr
µs
tc(on)
toff
Switching Time
Inductive Load
(Fig. 3, 4)
Tj = 25°C
Tj = 125°C
tc(off)
Collector-Emitter
Cutoff Current
ICES
V
CE = VCES, VCIN = 15V
(Fig. 5)
mA
—
10
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Limits
Unit
Symbol
Parameter
Circuit Current
Condition
Min.
—
Typ.
20
Max.
27
V*N1-V*NC
V*P1-V*PC
ID
VD = 15V, VCIN = 15V
mA
—
20
27
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Vth(ON)
Vth(OFF)
SC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN-VUNC, VN-VVNC, WN-VWNC
1.2
1.7
1200
1.5
2.0
—
1.8
2.3
—
V
A
–20 ≤ Tj ≤ 125°C, VD = 15V
(Fig. 3,6)
(Fig. 3,6)
Trip level
VD = 15V
µs
toff(SC)
—
0.2
—
VD = 15V
OT
135
—
145
125
12.0
12.5
—
—
—
°C
V
Over Temperature Protection
Detect Tj of IGBT chip
Reset level
Trip level
OTr
Supply Circuit Under-Voltage
Protection
UV
11.5
—
12.5
—
–20 ≤ Tj ≤ 125°C
VD = 15V, VFO = 15V
VD = 15V
Reset level
UVr
IFO(H)
IFO(L)
—
0.01
15
mA
ms
(Note-2)
(Note-2)
Fault Output Current
—
10
Minimum Fault Output Pulse
Width
tFO
1.0
1.8
—
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Typ.
4.0
Condition
Unit
Parameter
Mounting torque
Symbol
Min.
3.5
2.5
—
Max.
4.5
3.5
—
—
—
—
Main terminal
Mounting part
screw : M6
screw : M5
N • m
3.0
Mounting torque
Weight
N • m
g
1250
—
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter
Supply Voltage
Condition
Recommended value
Unit
V
VCC
Applied across P-N terminals
≤ 400
VWP1-VWPC
VWN1-VWNC
(Note-3)
Applied between : VUP1-VUPC, VVP1-VVPC,
VUN1-VUNC, VVN1-VVNC,
VD
Control Supply Voltage
15 ± 1.5
V
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Blocking Time
VCIN(ON)
VCIN(OFF)
fPWM
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN-VUNC, VN-VVNC, WN-VWNC
≤ 0.8
≥ 9.0
≤ 20
V
kHz
µs
Using Application Circuit of Fig. 8
tdead
For IPM’s each input signals
(Fig. 7)
≥ 3.0
(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
IN
IN
Fo
Fo
Ic
–Ic
V
V
VCIN
(15V)
VCIN
(0V)
VD (all)
VD (all)
Fig. 1 VCE(sat) Test
Fig. 2 VEC Test
a) Lower Arm Switching
Fo
trr
VCE
Signal input
(Upper Arm)
VCIN
(15V)
Irr
Ic
Vcc
CS
90%
Fo
Signal input
(Lower Arm)
90%
VCIN
10%
VD (all)
Fo
Ic
10%
10%
10%
b) Upper Arm Switching
tc(on)
tc(off)
Signal input
VCIN
VCIN
(Upper Arm)
Vcc
CS
td(on)
tr
td(off)
tf
Fo
VCIN
(15V)
Signal input
(Lower Arm)
(ton= td(on) + tr)
(toff= td(off) + tf)
Ic
VD (all)
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN
Short Circuit Current
P, (U,V,W)
A
Constant Current
SC
IN
Fo
Pulse
VCE
VCIN
(15V)
Ic
U,V,W, (N)
Fo
VD (all)
toff(SC)
Fig. 5 ICES Test
Fig. 6 SC test waveform
IPM’ input signal VCIN
(Upper Arm)
0V
1.5V
2V
t
1.5V
t
IPM’ input signal VCIN
(Lower Arm)
0V
2V
1.5V
2V
t
t
dead
dead
t
dead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
≥10µ
20k
VUP1
UPFO
UP
OT
OUT
P
+
–
Vcc
Fo
→
1.5k
1.5k
1.5k
1.5k
1.5k
1.5k
VD
IF
Si
In
VUPC
GND GND
U
≥0.1µ
VUN1
UNFO
OT
OUT
Vcc
Fo
Si
VD
VD
VD
VD
VD
UN
In
N
P
VUNC
GND GND
VVP1
VPFO
OT
OUT
Vcc
Fo
Si
VP
In
VVPC
M
GND GND
V
VVN1
VNFO
OT
OUT
Vcc
Fo
Si
VN
In
N
P
VVNC
GND GND
VWP1
WPFO
OT
OUT
Vcc
Fo
Si
WP
In
VWPC
GND GND
W
N
VWN1
WNFO
OT
OUT
Vcc
Fo
Si
WN
In
VWNC
GND GND
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
•
stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
•
Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
•
Slow switching opto-coupler: CTR > 100%
•
Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
•
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
•
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
•
and improve noise immunity of the system.
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
(TYPICAL)
700
600
500
400
300
200
100
0
2.5
2
VD = 15V
15V
13V
T
j
= 25°C
VD = 17V
1.5
1
0.5
T
T
j
j
= 25°C
= 125°C
0
0
0.5
1
1.5
2
2.5
0
100 200 300 400 500 600 700
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
C
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
D
) CHARACTERISTICS
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
(TYPICAL)
2.5
2
101
7
V
V
CC = 300V
= 15V
D
5
4
3
T
T
j
= 25°C
= 125°C
j
Inductive load
2
1.5
1
100
7
t
c(off)
5
4
3
t
c(on)
0.5
0
IC = 600A
2
T
T
j
= 25°C
= 125°C
j
10–1
12
13
14
15
16
17
18
(V)
101
2
3
4 5
7
102
2
3
4 5
(A)
7
103
CONTROL SUPPLY VOLTAGE V
D
COLLECTOR CURRENT I
C
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
102
101
7
7
5
4
3
E
SW(off)
5
4
3
2
101
2
t
off
7
5
4
3
100
7
t
on
E
SW(on)
2
100
5
4
3
V
V
CC = 300V
= 15V
V
V
CC = 300V
= 15V
E
E
SW(on)
SW(off)
7
5
4
3
D
D
T
T
j
= 25°C
= 125°C
T
T
j
= 25°C
= 125°C
2
j
j
2
Inductive load
Inductive load
10–1
10–1
101
2
3
4 5
7
102
2
3
4 5
7
103
101
2
3
4 5
7
102
2
3
4 5 7
103
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT IC (A)
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
101
103
103
7
V
D
= 15V
V
V
CC = 300V
= 15V
7
5
4
3
7
5
4
3
D
5
4
3
2
2
I
rr
100
102
2
7
5
4
3
7
5
4
3
102
7
2
2
t
rr
10–1
101
5
4
3
7
5
4
3
7
5
4
3
T
T
j
j
= 25°C
= 125°C
Inductive load
2
T
T
j
j
= 25°C
= 125°C
2
2
100
10–2
101
0
0.5
1
1.5
2
2.5
3
101
2
3
4 5
7
102
2
3
4 5
7
103
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR RECOVERY CURRENT –IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
I
D
VS. f
c
CHARACTERISTICS
(TYPICAL)
100
60
50
40
30
20
10
0
7
5
P-side or N-side
= 15V
= 25°C
V
D
3
2
T
j
10–1
7
5
3
2
10–2
7
5
3
2
Single Pulse
Per unit base = Rth(j – c)Q = 0.07°C/W
10–3
10–52 3 5 710–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 57101
0
5
10
15
20
(kHz)
25
CARRIER FREQUENCY f
c
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3
2
Single Pulse
Per unit base = Rth(j – c)F = 0.11°C/W
10–3
10–52 3 5 710–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 57101
TIME (s)
Jul. 2005
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