PM600DV1A060 [MITSUBISHI]
FLAT-BASE TYPE INSULATED PACKAGE; FLAT -BASE型绝缘包装
| 型号： | PM600DV1A060 |
| 厂家： | 
Mitsubishi Group |
| 描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 文件： | 总10页 (文件大小：418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
PM600DV1A060
FEATURE
a) Adopting new 5th generation Full-Gate
TM
CSTBT chip
b) The over-temperature protection which
detects the chip surface temperature of
TM
CSTBT is adopted.
c) Error output signal is possible from all
each protection upper and lower arm of IPM.
d) Compatible V-series package.
• Monolithic gate drive & protection logic
• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage.
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
November. 2011
1
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
C1
TjA
TjK
VCC
VP1
CPI
IN
IGBT
FWDi
AMP
OUT
FPO
Fo
SINK
SC
NC
GND
C2E1
VPC
TjA
TjK
VCC
IN
VN1
CNI
IGBT
FW Di
AMP
OUT
FNO
SINK
Fo
SC
NC
GND
VNC
E2
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
IC
Parameter
Collector-Emitter Voltage
Conditions
Ratings
600
600
Unit
V
VD=15V, VCIN=15V
TC=25°C
Pulse
Collector Current
A
W
A
ICRM
Ptot
1200
Total Power Dissipation
Emitter Current
TC=25°C
TC=25°C
Pulse
1712
IE
600
IERM
Tj
(Free wheeling Diode Forward current)
Junction Temperature
1200
-20 ~ +150
°C
*: Tc measurement point is just under the chip.
CONTROL PART
Symbol
VD
Parameter
Supply Voltage
Conditions
Ratings
20
Unit
V
Applied between : VP1-VPC, VN1-VNC
Applied between : CPI-VPC, CNI-VNC
Applied between : FPO-VPC, FNO-VNC
Sink current at FPO, FNO terminals
VCIN
VFO
IFO
Input Voltage
20
V
Fault Output Supply Voltage
Fault Output Current
20
V
20
mA
November. 2011
2
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol
Parameter
Conditions
Ratings
400
Unit
V
Supply Voltage Protected by
SC
VD =13.5V ~ 16.5V
VCC(PROT)
VCC(surge)
TC
Inverter Part, Tj =+125°C Start
Applied between : C1-E2, Surge value
Supply Voltage (Surge)
500
V
Module case operating
temperature
-20 ~ +100
-40 ~ +125
2500
°C
°C
V
Tstg
Storage Temperature
60Hz, Sinusoidal, Charged part to Base plate,
AC 1min, RMS
Visol
Isolation Voltage
*: TC measurement point is just under the chip.
THERMAL RESISTANCE
Limits
Typ.
-
-
Symbol
Parameter
Conditions
Unit
K/W
Min.
-
-
Max.
0.073
0.109
Rth(j-c)Q
Rth(j-c)D
Thermal Resistance
Junction to case, IGBT (per 1 element)
Junction to case, FWDi (per 1 element)
Case to heat sink, (per 1 module)
Thermal grease applied
(Note.1)
(Note.1)
Rth(c-s)
Contact Thermal Resistance
-
0.018
-
(Note.1)
Note1: If you use this value, Rth(s-a) should be measured just under the chips.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
1.90
1.90
1.7
0.8
0.4
0.4
1.0
0.3
-
Symbol
VCEsat
Parameter
Conditions
Unit
Min.
Max.
2.35
2.35
2.8
2.0
0.8
1.0
2.3
1.0
1
-
Tj=25°C
Tj=125°C
(Fig. 2)
Collector-Emitter Saturation
Voltage
VD=15V, IC=600A
CIN=0V, Pulsed
V
V
V
(Fig. 1)
-
-
VEC
ton
Emitter-Collector Voltage
IE=600A, VD=15V, VCIN= 15V
0.3
VD=15V, VCIN=0V←→15V
-
-
-
-
-
-
trr
V
CC=300V, IC=600A
Switching Time
s
tc(on)
toff
Tj=125°C
Inductive Load
(Fig. 3,4)
tc(off)
Tj=25°C
Tj=125°C
Collector-Emitter Cut-off
Current
ICES
V
CE=VCES, VD=15V , VCIN=15V (Fig. 5)
mA
-
10
November. 2011
3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Limits
Symbol
Parameter
Conditions
Unit
mA
V
Min.
-
Typ.
2
Max.
4
VP1-VPC
N1-VNC
ID
Circuit Current
VD=15V, VCIN=15V
V
-
2
4
Vth(ON)
Vth(OFF)
SC
Input ON Threshold Voltage
Input OFF Threshold Voltage
1.2
1.7
900
1.5
2.0
-
1.8
2.3
-
Applied between : CPI-VPC, CNI-VNC
Short Circuit Trip Level
Short Circuit Current Delay
Time
-20≤Tj≤125°C, VD=15V
(Fig. 3, 6)
(Fig. 3, 6)
A
toff(SC)
VD=15V
-
0.2
-
s
OT
Trip level
Hysteresis
Trip level
Reset level
135
-
-
Over Temperature Protection Detect Temperature of IGBT chip
°C
V
OT(hys)
UVt
-
20
-
12.5
-
11.5
12.0
12.5
-
Supply Circuit Under-Voltage
-20≤Tj≤125°C
Protection
UVr
-
-
IFO(H)
IFO(L)
tFO
0.01
15
-
Fault Output Current
VD=15V, VFO=15V
VD=15V
(Note.2)
mA
ms
-
10
Fault Output Pulse Width
(Note.2)
1.0
1.8
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Symbol
Parameter
Mounting Torque
Weight
Conditions
Unit
Min.
3.92
3.92
-
Typ.
4.90
4.90
510
Max.
5.88
5.88
-
Ms
Mt
m
Mounting part
screw : M6
screw : M6
N・m
Main terminal part
-
g
RECOMMENDED CONDITIONS FOR USE
Symbol
VCC
Parameter
Supply Voltage
Conditions
Applied across C1-E2 terminals
Applied between : VP1-VPC, VN1-VNC
Recommended value
Unit
V
≤ 400
VD
Control Supply Voltage
15.0±1.5
V
V
(Note.3)
(Fig. 7)
VCIN(ON)
VCIN(OFF)
fPWM
Input ON Voltage
≤ 0.8
≥ 4.0
≤ 20
Applied between : CPI-VPC, CNI-VNC
Input OFF Voltage
PWM Input Frequency
Using Application Circuit of Fig. 8
For IPM’s each input signals
kHz
Arm Shoot-through Blocking
Time
tdead
≥ 3.0
s
Note3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak
November. 2011
4
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their
corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be
allowed to rise above VCES rating of the device.
( These test should not be done by using a curve tracer or its equivalent. )
C1(C2)
V
C1(C2)
V
NC
NC
V*1
F*O
V*1
F*O
VD
VD
IE
Ic
C*I
C*I
V
*C
V*C
E1(E2)
E1(E2)
Fig. 1 VCEsat Test
Fig. 2 VEC Test
C1
C1
NC
NC
VP1
FPO
VP1
FPO
VD1
VD1
CPI
VPC
CPI
VPC
E1C2
Vcc
Vcc
NC
VN1
FNO
NC
VN1
FNO
E1C2
VD2
VD2
CNI
VNC
CNI
VNC
E2
E2
Ic
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
C1(C2)
NC
A
V*1
F*O
VD
pulse
VCE
C*I
V
*C
E1(E2)
Fig. 5 ICES Test
Fig. 6 SC test waveform
Fig. 7 Dead time measurement point example
5
November. 2011
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
C1
VP1
20k
≥10µ
Vcc OUT
+
-
Vcc
FPO
CPI
OT
SC
Fo
IN
IF
VD1
VPC
≥0.1µ
20k
GND
E1C2 (U)
VN1
≥10µ
Vcc OUT
FNO
CNI
OT
Fo
IF
SC
VD2
IN
VNC
E2
C1
≥0.1µ
GND
VP1
20k
≥10µ
Vcc
OUT
OT
FPO
CPI
Fo
IN
IF
SC
VD3
VPC
≥0.1µ
GND
M
E1C2 (V)
VN1
≥10µ
20k
Vcc OUT
FNO
OT
Fo
IF
CNI
SC
IN
VD4
VNC
E2
C1
≥0.1µ
GND
VP1
20k
≥10µ
OUT
OT
Vcc
FPO
Fo
IN
IF
CPI
SC
VD5
VPC
≥0.1µ
GND
E1C2 (W)
VN1
20k
≥10µ
Vcc
OUT
OT
FNO
CNI
VNC
Fo
IN
IF
VD6
SC
≥0.1µ
E2
GND
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and
E2 terminal.
November. 2011
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
2.5
2
600
500
400
300
200
100
0
Tj=25°C
VD=13V
VD=15V
1.5
1
VD=17V
0.5
0
VD=15V
Tj=25°C
Tj=125°C
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
600
500
400
300
200
100
0
2.5
2.0
1.5
1.0
Ic=600A
Tj=25°C
Tj=125°C
VD=15V
Tj=25°C
Tj=125°C
0
0.5
1
1.5
2
12
13
14
15
16
17
18
CONTROL VOLTAGE VD (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
November. 2011
7
MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
SWITCHING TIME (ton, toff) CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL)
10
1
tc(off)
toff
1
0.1
tc(on)
Vcc=300V
VD=15V
ton
Vcc=300V
VD=15V
Tj=25°C
Tj=25°C
Tj=125°C
Inductive Load
Tj=125°C
Inductive Load
0.01
0.1
10
100
1000
10
100
1000
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
35
0.6
300
Vcc=300V
VD=15V
Vcc=300V
VD=15V
Eoff
30
25
20
15
10
5
Tj=25°C
0.5
0.4
0.3
0.2
0.1
0
250
200
150
100
50
Irr
Tj=25°C
Tj=125°C
Tj=125°C
Inductive Load
Inductive Load
Eon
trr
0
0
0
200
400
600
800
0
200
400
600
800
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
November. 2011
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
FREE WHEELING DIODE
REVERSE RECOVERY ENERGY CHARACTERISTICS
(TYPICAL)
ID VS. fc CHARACTERISTICS
(TYPICAL)
70
16
Vcc=300V
VD=15V
14
12
10
8
VD=15V
Tj=25°C
60
Tj=25°C
Tj=125°C
Tj=125°C
50
Inductive Load
40
30
20
10
0
6
4
2
0
0
200
400
600
800
0
5
10
15
20
25
EMITTER CURRENT IE (A)
fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
20
2
18
16
14
12
10
8
1.8
1.6
1.4
1.2
1
UVt
UVr
VD=15V
0.8
0.6
0.4
0.2
0
6
4
2
0
-50
0
50
100
150
-50
0
50
100
150
Tj (°C)
Tj (°C)
November. 2011
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM600DV1A060
FLAT-BASE TYPE
INSULATED PACKAGE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
0.1
0.01
Single Pulse
IGBT Part;
Per unit base: Rth(j-c)Q=0.073 KW
FWDi Part;
Per unit base: Rth(j-c)D=0.109 K/W
0.001
0.00001 0.0001 0.001
0.01
0.1
1
10
TIME t (sec)
November. 2011
10
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