MGFS45V2325A_04 [MITSUBISHI]
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET; 2.3 - 2.5GHz的波段32W内部匹配的GaAs FET
| 型号： | MGFS45V2325A_04 |
| 厂家： | 
Mitsubishi Group |
| 描述： | 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| 文件： | 总2页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45V2325A
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFS45V2325A is an internally impedance-matched
GaAs power FET especially designed for use in 2.3 - 2.5
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
176.+0'ꢃ&4#9+0)
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=2.3 - 2.5 GHz
High power gain
GLP = 12 dB (TYP.) @ f=2.3 - 2.5GHz
High power added efficiency
P.A.E. = 45 % (TYP.) @ f=2.3 - 2.5GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 2.3 - 2.5 GHz band power amplifier
item 51 : 2.3 - 2.5 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 6.5 (A)
)(ꢀꢁꢂ
RG=25 (ohm)
< Keep safety first in your circuit designs! >
(Ta=25deg.C)
ABSOLUTE MAXIMUM RATINGS
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
Symbol
Parameter
Ratings
-15
Unit
V
VGDO Gate to drain voltage
VGSO Gate to source voltage
-15
V
ID
Drain current
22
A
IGR
IGF
Reverse gate current
Forward gate current
-61
mA
mA
W
76
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
PT *1 Total power dissipation
100
Tch
Channel temperature
Storage temperature
175
deg.C
deg.C
Tstg
-65 / +175
*1 : Tc=25deg.C
(Ta=25deg.C)
ELECTRICAL CARACTERISTICS
Limits
Typ.
Unit
Symbol
Parameter
Test conditions
Min.
Max.
-5
VGS(off)
P1dB
Saturated drain current
Output power at 1dB gain
compression
VDS = 3V , ID = 60mA
-
-
V
44
45
-
dBm
GLP
ID
Linear power gain
VDS=10V, ID(RF off)=6.5A, f=2.3 - 2.5GHz
11
12
7.5
45
-45
-
-
dB
A
Drain current
-
-
-
-
P.A.E.
IM3 *2
Rth(ch-c) *3
Power added efficiency
3rd order IM distortion
Thermal resistance
%
-42
-
-
dBc
deg.C/W
delta Vf method
1.5
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.3,2.4,2.5GHz,dfelta f=5MHz
*3 : Channel-case
June-'04
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45V2325A
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
June-'04
MITSUBISHI
ELECTRIC
相关型号：
MGFS45V2527-01
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
MITSUBISHI
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