MGFS45V2527 [MITSUBISHI]
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET; 2.5 - 2.7GHz的波段30W INTERNALLY MATCHD的GaAs FET
| 型号： | MGFS45V2527 |
| 厂家： | 
Mitsubishi Group |
| 描述： | 2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45V2527
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
DESCRIPTION
Until : millimeters (inches)
OUTLINE DRAWING
The MGFS45V2527 is an internally impedance matched
GaAs power FET especially designed for use in 2.5~2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
24±0.3 (0.945±0.012)
(0.024±0.006)
0.6±0.15
FEATURES
Class A operation
R1.2
Internally matched to 50 (W) system
High output power
P1dB=30W (TYP.) @f=2.5~2.7GHz
High power gain
GLP=12dB (TYP.) @f=2.5~2.7GHz
High power added efficiency
hadd=45% (TYP.) @f=2.5~2.7GHz
Loe distortion [item -51]
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
20.4±0.2 (0.803±0.008)
16.7 (0.658)
APPLICATION
item 01 : 2.5~2.7GHz band power amplifier
item 51 : 2.5~2.7GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
(1) GATE
(2) Source (FLANGE)
(3) DRAIN
VDS=10V
ID=6.5A
GF-38
RG=25W
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
< Keep safety first in your circuit designs! >
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
-15
Unit
V
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
V
-15
22
A
-61
IGR
IGF
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
mA
mA
W
76
*1
PT
88
Tch
°C
175
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
Tstg
Storage temperature
-65 ~ +175
°C
*1 : Tc=25°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Limits
Test conditions
Unit
Symbol
Parameter
Min.
—
Typ.
—
Max
-5
VGS (off)
P1dB
Saturated drain current
VDS=3V, ID=60mA
V
Output power at 1dB gain
compression
44
45
—
dBm
GLP
ID
Linear power gain
Drain current
VDS=10V, ID(RF off)=6.5A, f=2.5~2.7GHz
11
—
12
7.5
45
—
—
dB
A
hadd
Power added efficiency
3rd order IM distortion
Thermal resistance
—
—
%
IM3
*2
*1
-42
—
-45
—
—
dBc
°C/W
DVf method
1.7
Rth (ch-c)
*1 : Channel to case
*2 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.5, 2.6, 2.7GHz,Df=5MHz
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45V2527
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
TYPICAL CHARACTERISTICS
Po, hadd vs. Pin
P1dB,GLP vs. f
46
45
44
43
42
41
16
15
14
13
12
11
50
45
40
35
30
25
20
15
70
60
50
40
30
20
10
0
VDS=10(V)
P1dB
Pout
IDS=6.5(A)
VDS=10 (V)
IDS=6.5(A)
f=2.6 (GHz)
GLP
h
add
2.45
2.5
2.55
2.6
2.65
2.7
2.75
15
20
25
30
35
FREQUENCY f (GHz)
INPUT POWER Pin (dBm)
Po,IM3 vs. Pin
42
40
38
36
34
32
30
28
26
24
20
VDS=10(V)
IDS=6.5(A)
f1=2.700(GHz)
f2=2.705(GHz)
10
Po
0
-10
-20
-30
-40
-50
-60
-70
IM3
14
16
18
20
22
24
26
28
30
32
34
INPUT POWER Pin (dBm S.C.L.)
S Parameters ( Tc=25˚C, VDS=10V, IDS=6.5A )
S-Parameter (TYP.)
S21 S12
S11
S22
f
(GHz)
Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg)
2.40
2.45
2.50
2.55
2.60
2.65
2.70
2.75
2.80
0.57
0.54
0.52
0.45
0.39
0.30
0.19
0.18
0.30
165
152
138
123
106
82
4.25
4.35
4.40
4.49
4.60
4.68
4.68
4.57
4.29
50
36
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.04
15
0
0.15
0.13
0.12
0.12
0.12
0.13
0.12
0.13
0.10
-24
-37
21
-21
-35
-60
-73
-89
-117
-133
-60
6
-82
-10
-28
-47
-66
-86
-111
-134
-156
176
160
37
-25
-73
MITSUBISHI
ELECTRIC
相关型号：
MGFS45V2527-01
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
MITSUBISHI
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