MGFC39V7785A-51 [MITSUBISHI]
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET;
| 型号： | MGFC39V7785A-51 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET 局域网 放大器 CD 晶体管 |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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