MGFC39V7785A_04 [MITSUBISHI]
7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET; 7.7 〜 8.5GHz波段8W内部匹配的GaAs FET
| 型号： | MGFC39V7785A_04 |
| 厂家： | 
Mitsubishi Group |
| 描述： | 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| 文件： | 总2页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V3436
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC39V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz
band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING Unit : millimeters
FEATURES
Class A operation
0.6 +/-0.15
Internally matched to 50(ohm) system
High output power
(2)
(2)
P1dB = 8W (TYP.) @ f=3.4~3.6GHz
High power gain
R-1.6
GLP = 12.5 dB (TYP.) @ f=3.4~3.6GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=3.4~3.6GHz
Low distortion [ item -51 ]
(3)
IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.
APPLICATION
item 01 : 3.4~3.6 GHz band power amplifier
item 51 : 3.4~3.6 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS= 10 (V)
ID= 2.4 (A)
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-8
RG= 50 (ohm)
(Ta=25 deg.C)
ABSOLUTE MAXIMUM RATINGS
< Keep safety first in your circuit designs! >
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
-15
Unit
V
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety
when making your circuit designs, with appropriate measures
such as (1)placement of substitutive, auxiliary circuits, (2)use of
non-flammable material or (3)prevention against any malfunction
or mishap.
-15
V
7.5
A
IGR
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-20
mA
mA
W
IGF
42
PT
42.8
175
Tch
deg.C
deg.C
Tstg
-65/+175
*1 : Tc=25 deg.C
(Ta=25 deg.C)
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
Typ.
-
Max.
IDSS
gm
Saturated drain current
Transconductance
VDS=3V, VGS=0V
VDS=3V, ID=2.2A
VDS=3V, ID=20mA
-
-
7.5
A
S
2
-
Gate to source cut-off voltage
Output power at 1dB gain compression
Linear power gain
VGS(off)
P1dB
GLP
ID
-
-
-4.5
V
38
10
-
39.5
12.5
-
-
-
dBm
dB
A
VDS=10V, ID(RF off)=2.4A, f=3.4~3.6GHz
Drain current
3
-
P.A.E.
IM3
Power added efficiency
-
32
-45
3
%
3rd order IM distortion
*1
*2
-42
-
-
dBc
Rth(ch-c) Thermal resistance
Delta Vf method
3.5 deg.C/W
*1 : item -51, 2 tone test, Po=28dBm Single Carrier Level, f=3.6GHz, Delta f=5MHz
*2 : Channel to case
June/2004
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V3436
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
June/2004
MITSUBISHI
ELECTRIC
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