MGFC36V7177A_11 [MITSUBISHI]

C band internally matched power GaAs FET; C波段内部匹配功率GaAs FET


型号：	MGFC36V7177A_11
厂家：	Mitsubishi Group
描述：	C band internally matched power GaAs FET C波段内部匹配功率GaAs FET
文件：	总3页 (文件大小：120K)
中文：	中文翻译
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< C band internally matched power GaAs FET >

MGFC36V7177A

7.1 – 7.7 GHz BAND / 4W

DESCRIPTION

OUTLINE DRAWING Unit : millimeters

The MGFC36V7177A is an internally impedance-matched

GaAs power FET especially designed for use in 7.1 – 7.7

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

21.0 +/-0.3

(1)

0.6 +/-0.15

FEATURES

Class A operation

Internally matched to 50(ohm) system

(2)

 High output power

R-1.6

P1dB=4W (TYP.) @f=7.1 – 7.7GHz

 High power gain

GLP=9.0dB (TYP.) @f=7.1 – 7.7GHz

 High power added efficiency

P.A.E.=30% (TYP.) @f=7.1 – 7.7GHz

 Low distortion [ item -51]

IM3=-45dBc (TYP.) @Po=25dBm S.C.L.

(3)

10.7

17.0 +/-0.2

APPLICATION

 item 01 : 7.1 – 7.7 GHz band power amplifier

 item 51 : 7.1 – 7.7 GHz band digital radio communication

QUALITY

 IG

12.0

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=1.2A Refer to Bias Procedure  RG=100ohm

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

GF-8

Absolute maximum ratings (Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Symbol

Parameter

Ratings

Unit

Gate to drain

VGDO

breakdown voltage

-15

VGSO Gate to source breakdown voltage

-15

Drain current

3.75

-10

IGR

IGF

PT *1

Tch

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

175

C

Tstg

-65 to +175

*1 : Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

3.75

IDSS

VDS=3V,ID=1.1A

VDS=3V,ID=10mA

Gate to source cut-off voltage

-4.5

VGS(off)

P1dB

GLP

Output power at 1dB gain compression VDS=10V,ID(RF off)=1.2A

36.5

dBm

f=7.1 – 7.7GHz

Linear Power Gain

Drain current

1.8

P.A.E.

IM3 *2

Rth(ch-c) *3

Power added efficiency

3^rdorder IM distortion

Thermal resistance

-45

-42

dBc

C/W

*2 :Item -51,2 tone test, Po=25dBm Single Carrier Level, f=7.7GHz, Delta f=10MHz

*3 :Channel-case

Publication Date : Apr., 2011

< C band internally matched power GaAs FET >

MGFC36V7177A

7.1 – 7.7 GHz BAND / 4W

MGFC36V7177A TYPICAL CHARACTERISTICS( Ta=25deg.C )

P1dB,GLP vs. f

Po,PAE vs. Pin

Po,IM3 vs. Pin

MGFC36V7177A S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )

S Parameters(Typ.)

S11

S21

S12

S22

(GHz)

Magn.

0.41

0.35

0.29

0.22

0.14

0.10

0.18

Angle(deg.)

172

Magn.

2.85

2.92

2.97

2.98

2.93

2.88

2.79

Angle(deg.)

-109

Magn.

0.077

0.082

0.087

0.091

0.096

0.098

0.099

Angle(deg.)

-157

-171

174

Magn.

0.25

0.24

0.23

0.21

0.20

0.19

0.21

Angle(deg.)

7.1

7.2

7.3

7.4

7.5

7.6

7.7

160

-124

148

-139

-18

-39

-65

-93

-121

134

-154

160

123

-169

144

132

174

129

130

158

113

Publication Date : Apr., 2011

< C band internally matched power GaAs FET >

MGFC36V7177A

7.1 – 7.7 GHz BAND / 4W

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more

reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors

may lead to personal injury, fire or property damage. Remember to give due consideration to safety when

making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi

semiconductor product best suited to the customer’s application; they do not convey any license under any

intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

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circuit application examples contained in these materials.

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Publication Date : Apr., 2011

MGFC36V7177A_11 [MITSUBISHI]

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