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MGFC0904-03 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, DIE-3;

MGFC0904-03


元器件型号：	MGFC0904-03
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, DIE-3 放大器晶体管
PDF文件：	总7页 (文件大小：246K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFC0904-03参数

MGFC1402-T01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8

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0 MITSUBISHI

MGFC1402-T02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8

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0 MITSUBISHI

MGFC1403

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE

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48 MITSUBISHI

MGFC1403-A03

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC1403-A13

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC1403-T01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1403-T01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1403-T02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1403-T02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1403-T03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1412-T01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8

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0 MITSUBISHI

MGFC1412-T02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8

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0 MITSUBISHI

MGFC1412-T03

暂无描述

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0 MITSUBISHI

MGFC1423-T03

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-6

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0 MITSUBISHI

MGFC1801

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE

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35 MITSUBISHI

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