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MGFC1412-T02 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8;

MGFC1412-T02


元器件型号：	MGFC1412-T02
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8 放大器晶体管
PDF文件：	总5页 (文件大小：148K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFC1412-T02参数

MGFC1412-T03

暂无描述

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0 MITSUBISHI

MGFC1423-T03

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-6

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0 MITSUBISHI

MGFC1801

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE

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35 MITSUBISHI

MGFC1801-A11

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI

MGFC1801-T02

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI

MGFC1801-T03

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI

MGFC2407-T02

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-2

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1 MITSUBISHI

MGFC2407-T03

暂无描述

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0 MITSUBISHI

MGFC2415A

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC2430A

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI

MGFC2430-T03

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8

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0 MITSUBISHI

MGFC36V3436

3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

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43 MITSUBISHI

MGFC36V3436

C band internally matched power GaAs FET

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29 MITSUBISHI

MGFC36V3436

3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

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36 MITSUBISHI

MGFC36V3436_04

3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

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18 MITSUBISHI

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