MF365A-LZCATXX [MITSUBISHI]
8/16-bit Data Bus Static RAM Card; 8位/ 16位数据总线静态RAM卡
| 型号： | MF365A-LZCATXX |
| 厂家： | 
Mitsubishi Group |
| 描述： | 8/16-bit Data Bus Static RAM Card |
| 文件： | 总16页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
MF365A-LZCATXX
8/16-bit Data Bus
Static RAM Card
MF3129-LZCATXX
MF3257-LZCATXX
MF3513-LZCATXX
MF31M1-LZCATXX
MF32M1-LZCATXX
MF34M1-LZCATXX
Connector Type
Two- piece 68-pin
1. DESCRIPTION
2. FEATURES
Mitsubishi’s Static RAM cards provide large memory
capacities on a device approximately the size of a
credit card (85.6mm´ 54mm´ 3.3mm).
The cards use a 8/16 bit data-bus. The devices use a
replaceable lithium battery to maintain data.
Available in 64K byte-4M byte capacities,
Mitsubishi’s Static RAM cards are available with a
68-pin, two-piece connector.
nUses TSOP (Thin Small Outline Package) to
achieve very high memory density coupled with
high reliability, without enlarging card size
nElectrostatic discharge protection to 15kV
nBuffered interface
nWrite protect switch
nAttribute memory
n68pin
3. APPLICATIONS
nOffice automation
nComputers
nData Communication
nIndustrial
nTelecommunications nConsumer
4. PRODUCT LIST
Item
Memory
capacity
64KB
Data Bus
width(bits)
Attribute
memory
Auxiliary
battery
Type name
MF365A-LZCATXX
MF3129-LZCATXX
MF3257-LZCATXX
MF3513-LZCATXX
MF31M1-LZCATXX
MF32M1-LZCATXX
MF34M1-LZCATXX
128KB
256KB
512KB
1MB
2MB
4MB
8/16
8KB
NO
E2PROM
MITSUBISHI
ELECTRIC
1/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
5. SUMMARY
MF3XXX-LZCATXX series is the Static RAM cards which has 8/16 bit changeable data-bus width.
The card has a replaceable lithium battery to maintain data in memory. When the card is not use or the supply
voltage drops, the battery will automatically maintain data in memory.
6. FUNCTIONAL DESCRIPTION
The function of the card is determined by the combination of the following five control signals,
REG#, CE1#, CE2#, OE#, WE#; active low signals. (Please refer to section 10 FUNCTION TABLE on page 5)
(1)COMMON MEMORY FUNCTION
When REG# signal is high level, the common memory area is selected.
(a)READ MODE
To read, WE# is set high level and CE1# or CE2# is set low level and the memory address is applied at inputs
A0-A21(4MB). Setting OE# low level executes the reading with output at data-bus. It is available to make the
following functions according to the combination of CE1# and CE2#.
When CE1# is set low level and CE2# is set high level, the card operates as an 8 bit data-bus width card.
The data can be dealt with lower data-bus(D0-D7).
When both CE1# and CE2# are set low level, the card operates as a 16 bit data-bus width card.
At this mode LSB of address-bus (A0) is ignored.
In addition odd byte can be accessed through upper data-bus(D8-D15) when CE1# is set high level and CE2# is
set low level. This mode is useful when handling only odd bytes in the 16 bit data-bus interface system (A0 is
ignored).
When both CE1# and CE2# are set high level, the card becomes a standby mode where the card consumes
low power and the data-bus is placed in high impedance state (above functions of CE1# and CE2# are the same
as in the following modes).
When both OE# and WE# are set high level, the card becomes a output disable mode and the data-bus is
placed in high impedance state.
(b)WRITE MODE
To write, the memory address is first applied at inputs A0-A21(4MB) and the data is applied at output pins.
Setting CE1# or CE2# low level, WE# low level and OE# high level executes the writing.
(2)ATTRIBUTE MEMORY FUNCTION
When REG# is set low level, the attribute memory area is selected. MF3XXX-LZCATXX series accommodates
an attribute memory of 8KB E2PROM on even addresses.
(a)READ MODE
First set CE1# and CE2# low level or high level and select residing address (even address). Data can be read by
setting OE# low level and WE# high level.
(b)WRITE MODE
Writing can be done either by byte-mode or page-mode. The page-mode write is the function to be able to write
data of 32 bytes in a single write cycle. The page address is set by A6 to A13 (Please note that attribute memory
exists in even bytes only). To write, set OE# high level and WE# low level. Data will be latched at the rising
edge of WE#. After the first load unless WE# changes from high level to low level within 30ms, the automatic
erase/program starts and completes in 10ms or before. Page data can be latched if WE# transits from high level
to low level before the 30ms. Page-mode write also executes erase/program operation within 10ms.
The page address must be maintained during the page data loading.
7. WRITE PROTECT MODE
When the write protect switch is switched on, this card goes into a write protect mode that can read but not
write data. In this mode, WP pin becomes “H” level.
At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin
indicates “L” level).
MITSUBISHI
ELECTRIC
2/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
8. PIN ASSIGNMENTS
Pin
No.
1
2
3
4
5
6
Pin
No.
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Symbol
Function
Function
Symbol
GND Ground
D3
D4
D5
D6
D7
CE1# Card enable 1
A10 Address input
OE# Output enable
A11
A9
A8
GND Ground
CD1# Card detect 1
D11
D12
D13
D14
D15
Data I/O
Data I/O
7
8
9
CE2# Card enable 2
NC
NC
NC
A17
A18
A19
A20
A21
VCC
NC
NC
NC
NC
NC
NC
NC
NC
NC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
No connection
Address input
A17 (NC for < 128KB types)
A18 (NC for < 256KB types)
A19 (NC for < 512KB types) Address
A20 (NC for < 1MB type)
A21 (NC for < 2MB type)
Power supply voltage
A13
A14
WE# Write enable
NC No connection
VCC Power supply voltage
input
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
WP
No connection
A16 (NC for 64KB type)
No connection
Address input
REG# Attribute memory select
BVD2 Battery voltage detect 2
BVD1 Battery voltage detect 1
D8
D9
D10
Data I/O
Data I/O
Write protect
CD2# Card detect 2
GND Ground
GND Ground
MITSUBISHI
ELECTRIC
3/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
9 . BLOCK DIAGRAM (4MB) (MF34M1-LZCATXX)
A21
ADDRESS-
DECODER
A20
9
A0
A19
A18
A17
A16
A15
A14
A13
D15
D14
D13
CS#
8
8
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
COMMON
MEMORY
A12
ADDRESS-
BUS
BUFFERS
A11
19
A10
A9
DATA-BUS
BUFFERS
A8
A7
A6
A5
A4
A3
4Mbit SRAM´ 8
OE#
WE#
A2
A1
CS#
ATTRIBUTE
MEMORY
64Kbit
E2PROM´ 1
8
CE1#
CE2#
13
OE#
WE#
MODE
CONTROL
LOGIC
WE#
OE#
2
REG#
WP#
TO INTERNAL
POWER SUPPLY
WRITE PROTECT
OFF
VCC
VOLTAGE DETECTOR
ON
&
BVD2
BVD1
POWER CONTROLLER
CR2025
CD1#
CD2#
GND
MITSUBISHI
ELECTRIC
4/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
10. FUNCTION TABLE
Mode REG# CE1# CE2#
Standby
Read A (16bit)
common
OE#
X
L
WE# A0
I/O (D15~D8)
High-impedance High-impedance
I/O (D7~D0)
Icc
standby
Active
X
H
H
L
H
L
X
H
X
X
Odd Byte
Data out
Odd Byte
Data in
High-impedance Even Byte
Data out
Even Byte
Data out
Even Byte
Data in
Write A (16bit)
common
Read B (8bit)
common
H
H
H
L
L
L
L
H
H
H
L
L
L
H
H
X
L
Active
Active
Active
H
High-impedance Odd Byte
Data out
H
H
H
L
L
H
H
H
L
H
H
L
L
L
H
L
H
X
High-impedance Even Byte Data in Active
High-impedance Odd Byte Data in Active
Write B (8bit)
common
Read C (8bit)
common
Write C (8bit)
common
Odd Byte
Data out
Odd Byte
Data in
High-impedance
Active
H
H
L
H
L
X
High-impedance
Active
Output disable
Read A (16bit)
attribute
X
L
X
L
X
L
H
L
H
H
X
X
High-impedance High-impedance
Active
Active
Data out
Even Byte
Data out
(unknown)
L
L
L
L
L
L
H
L
H
H
L
L
L
L
L
H
H
H
H
L
L
H
X
X
High-impedance Even Byte
Data out
High-impedance Data out
(unknown)
Active
Active
Read B (8bit)
attribute
Read C (8bit)
attribute
Write A (16bit)
attribute
Write B (8bit)
attribute
Write C (8bit)
attribute
Data out
High-impedance
Active
(unknown)
don’t care
Even Byte Data in Active
Even Byte Data in Active
don’t care
don’t care
L
L
L
L
L
H
H
H
L
H
H
H
L
L
L
L
H
X
don’t care
don’t care
don’t care
Active
Active
Note 1 : H=VIH, L=VIL, X=VIH or VIL
11. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
Supply voltage
Conditions
Ratings
-0.3~6.0
-0.3~VCC+0.3
0~VCC
Unit
V
V
Vcc
VI
Input voltage
With respect to GND
VO
Output voltage
V
Topr1
Topr2
Tstg
Operating temperature 1
Operating temperature 2
Storage temperature
Read, Write Operation
Data retention
Excludes data retention
0~60
0~60
-20~70
°C
°C
°C
12. RECOMMENDED OPERATING CONDITIONS (Ta=0~55°C, unless otherwise noted)
Limits
Parameter
Symbol
Unit
Min.
4.75
Typ.
5.0
0
Max.
5.25
Vcc
GND
VIH
VIL
Vcc Supply voltage
System ground
High input voltage
Low input voltage
V
V
V
V
2.4
0
VCC
0.8
MITSUBISHI
ELECTRIC
5/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
13. ELECTRICAL CHARACTERISTICS (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Unit
Min. Typ. Max.
VOH
VOL
IIH
High output voltage
Low output voltage
High input current
Low input current
IOH= -1.0mA
IOL=2mA
VI=Vcc V
VI=0V
2.4
0.4
10
V
V
µA
µA
IIL
CE1#, CE2#, WE#, OE#, REG#
Other inputs
-10
-70
-10
10
IOZH
High output current
in off state
Low output current
in off state
Active supply
current 1
Active supply
current 2
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
VO=Vcc
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
VO=0V
µA
µA
mA
mA
IOZL
-10
Icc 1 • 1
Icc 1 • 2
CE1#=CE2#=VIL, Other inputs 64KB~512KB
170
230
160
=VIH or VIL,Outputs=open
CE1#=CE2# £ 0.2V, Other
inputs £ 0.2V or ³ Vcc-0.2V,
Outputs=open
1MB~4MB
64KB~512KB
1MB~4MB
64KB~4MB
220
10
Icc 2 • 1
Icc 2 • 2
Standby supply
current 1
Standby supply
current 2
CE1#=CE2#=VIH
mA
mA
Other inputs=VIH or VIL
CE1#=CE2# ³ Vcc-0.2V
Other inputs £ 0.2V or
³ Vcc-0.2V
64KB~512KB
1MB~4MB
0.45
0.65
VBDET1
VBDET2
Battery detect
reference voltage 1
Battery detect
Vcc=5V, Ta=25°C
2.27
2.55
2.37 2.47
2.65 2.75
V
V
Vcc=5V, Ta=25°C
reference voltage 2
Note 2 : Currents flowing into the card are taken as positive (unsigned).
3 : Typical values are measured at Vcc=5V, Ta=25°C.
14. CAPACITANCE
Limits
Typ.
Test conditions
Parameter
Symbol
CI
Unit
Min.
Max.
30
Input capacitance
VI=GND, vi=25mVrms
f=1MHZ, Ta=25°C
pF
pF
Output Capacitance
Vo=GND, vo=25mVrms
f=1MHz, Ta=25°C
CO
20
Note 4 : These parameters are not 100% tested.
MITSUBISHI
ELECTRIC
6/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
15. SWITCHING CHARACTERISTICS
Read Cycle (Ta=0~55°C, VCC=5V±5%, unless otherwise noted)
Symbol
Parameter
Limits
Unit
Min.
Max.
tcR
Read cycle time
150
ns
ns
ns
ns
ns
ns
ns
ns
ns
ta(A)
Address access time
150
150
75
ta(CE)
ta(OE)
tdis(CE)
tdis(OE)
ten(CE)
ten(OE)
tV(A)
Card enable access time
Output enable access time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
75
75
5
5
0
Data valid time (after address change)
16. TIMING REQUIREMENTS
Write Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Limits
Unit
Min.
150
80
Max.
tcW
Write cycle time
Write pulse width
Address set up time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tw(WE)
tsu(A)
20
tsu(A-WEH)
Address set up time with respect to WE# high
100
100
50
tsu(CE-WEH) Card enable set up time with respect to WE# high
t(D-WEH)
th(D)
Data set up time with respect to WE# high
Data hold time
20
trec(WE)
tdis(WE)
tdis(OE)
ten(WE)
ten(OE)
Write recovery time
20
Output disable time (from WE#)
Output disable time (from OE#)
Output enable time (from WE#)
Output enable time (from OE#)
OE# set up time with respect to WE# low
OE# hold time with respect to WE# high
75
75
5
5
tsu(OE-WE)
th(OE-WE)
10
10
MITSUBISHI
ELECTRIC
7/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM
Read Cycle
tcR
VIH
An
VIL
VIH
ta(A)
ta(CE)
tV(A)
CE#
VIL
ten(CE)
tdis(CE)
ta(OE)
VIH
OE#
VIL
ten(OE)
tdis(OE)
VOH
Hi-Z
Dm
OUTPUT VALID
(DOUT)
VOL
WE#=“H” level
REG#=“H” level
Write Cycle (WE# control)
tCW
VIH
An
VIL
tSU(CE-WEH)
tSU(A-WEH)
VIH
CE#
VIL
VIH
OE#
tW(WE)
VIL
tSU(A)
trec(WE)
VIH
WE#
VIL
th(OE-WE)
th(D)
tSU(OE-WE)
Hi-Z
t(D-WEH)
VIH
Dm
(DIN)
DATA INPUT STABLE
VIL
tdis(WE)
tdis(OE)
ten(OE)
VOH
VOL
ten(WE)
Hi-Z
Dm
(DOUT)
REG#=“H” level
MITSUBISHI
ELECTRIC
8/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
Write Cycle (CE# control)
tCW
VIH
An
VIL
trec(WE)
tSU(CE-WEH)
tSU(A)
VIH
CE#
VIL
VIH
WE#
VIL
th(D)
t(D-WEH)
VIH
Hi-Z
Dm
DATA INPUT STABLE
(DIN)
VIL
OE#=“H” level
REG#=“H” level
17. SWITCHING CHARACTERISTICS (Attribute)
Read Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol Parameter
Limits
Unit
Min. Max.
tcRR
ta(A)R
ta(CE)R
ta(OE)R
Read cycle time
300
300
300
150
100
100
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
Card enable access time
Output enable access time
tdis(CE)R Output disable time (from CE#)
tdis(OE)R Output disable time (from OE#)
ten(CE)R
ten(OE)R
tV(A)R
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time after address change
5
0
MITSUBISHI
ELECTRIC
9/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
18. TIMING REQUIREMENTS (Attribute)
Write Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Limits
Unit
Min. Max.
Address setup time
CE# setup time
CE# hold time
Data setup time
Data hold time
OE# setup time
OE# hold time
Write pulse width
Data latch time
Byte load cycle time
Write cycle time
Output enable time from OE#
Write recovery time
30
40
30
120
40
30
40
170
120
0.3
10
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ns
ns
tsu(A)R
tsu(CE)R
th(CE)R
t(D-WEH)R
th(D)R
tsu(OE-WE)R
th(OE-WE)R
tw(WE)R
tDLR
tBLCR
tcWR
ten(OE)R
trec(WE)R
30
30
TIMING DIAGRAM (Attribute)
tcRR
Read Cycle
VIH
An
VIL
VIH
ta(A)R
ta(CE)R
tV(A)R
CE#
VIL
ten(CE)R
ta(OE)R
tdis(CE)R
tdis(OE)R
VIH
OE#
VIL
ten(OE)R
VOH
Hi-Z
Dm
OUTPUT VALID
(DOUT)
VOL
WE#=“H” level
REG#=“L” level
MITSUBISHI
ELECTRIC
10/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
BYTE WRITE TIMING CHART
trec(WE)R
th(CE)R
VIH
An
VIL
tsu(CE)R
tsu(A)R
VIH
CE#
VIL
tw(WE)R
VIH
WE#
tcWR
th(OE-WE)R
VIL
tsu(OE-WE)R
VIH
VIL
OE#
t(D-WEH)R
th(D)R
tdis(OE)R
Hi-Z
VIH
VIL
DIN
ten(OE)R
VOH
VOL
Hi-Z
DOUT
REG#=“L” level
MITSUBISHI
ELECTRIC
11/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
PAGE MODE WRITE TIMING CHART
An=(n>5)
An
(A0~A5)
2h
4h
0h
3Ch
3Eh
CE#
th(CE)R
tsu(CE)R
tw(WE)R
WE#
tsu(A)R
th(OE-WE)R
tDLR
tBLCR
trec(WE)R
tsu(OE-WE)R
OE#
tcWR
th(D)R
t(D-WEH)R
Hi-Z
DIN
tdis(OE)R
Hi-Z
DOUT
REG#=“L” level
Note 5 : Test Conditions
Input pulse levels
: VIL=0.4V, VIH=2.8V
Input pulse rise, fall time : tr=tf=10ns
Reference voltage
Input
: VIL=0.8V, VIH=2.4V
: VOL=0.8V, VOH=2.0V
Output
(ten and tdis are measured when output voltage is ± 500mV from steady state. )
Load
: 100pF + 1 TTL gate
5pF + 1 TTL gate (at ten and tdis measuring)
6 :
Indicates the don’t care input
7 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory)
8 : Don’t apply inverted phase signal externally when Dm pin is in output mode.
9 : CE# is indicated as follows:
Read A/Write A : CE#=CE1#=CE2#
Read B/Write B : CE#=CE1#, CE2#=“H” level
Read C/Write C : CE#=CE2#, CE1#=“H” level
MITSUBISHI
ELECTRIC
12/16
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
19. ELECTRICAL CHARACTERISTICS
BATTERY BACKUP (Ta=0~55°C, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Typ.
Unit
Min.
2.6
2.4
Max.
VBATT
Vi(CE)
Back-up enable battery voltage
Card enable voltage
All pins open
2.4V£VCC£5.25V
0V£VCC<2.4V
V
V
Vcc-0.1
Vcc
Vcc+0.1
64KB
128KB
256KB
512KB
1MB
3
3
3
5
3
All pins open,
VBATT=3V,
Ta=25°C
Battery back-up supply current
Battery back-up supply current
mA
2MB
4MB
5
9
Icc
(Bup)
64KB
128KB
256KB
512KB
1MB
30
30
30
50
30
50
90
All pins open,
VBATT=3V
mA
2MB
4MB
20. TIMING REQUIREMENTS (Ta=0~55°C, unless otherwise noted)
Symbol Parameter
Limits
Min. Typ. Max.
Unit
tpr
tpf
tsu(Vcc)
trec(Vcc)
Power supply rise time
Power supply fall time
Setup time at power on
Recovery time at power off
0.1
3
20
300 ms
300 ms
ms
1000
ns
CARD INSERTION/REMOVAL TIMING DIAGRAM
tpf
tpr
VCC
VCC
VCC MIN
VCC MIN
90%
90%
tsu(VCC)
trec(VCC)
VIH
VIH
10%
10%
CE1#,
CE2#
CE1#,
CE2#
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ELECTRIC
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Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
21. BATTERY SPECIFICATIONS
Please use the following coin type lithium battery.
Type of main battery; CR2025 or equivalents
21.1 BATTERY LIFE EXPECTANCY
The calculated main battery’s life expectancies are as follows.
main battery’s life
Card Type
(when the card is
left continuously)
5.9years
MF365A-LZCATXX
MF3129-LZCATXX
MF3257-LZCATXX
MF3513-LZCATXX
MF31M1-LZCATXX
MF32M1-LZCATXX
MF34M1-LZCATXX
5.9years
5.9years
3.6years
5.9years
3.6years
2.0years
Conditions; Temperature : 25°C Humidity : 60%RH
22. CONNECTOR
The number of card insertion and removal are as follows.
Office environment
Harsh environment
10000 times min. at speed of 10 cycles/min.
5000 times min. at speed of 10 cycles/min.
23. CARD WEIGHT
about 30g
24. UL CLASS OF MAIN CARD PARTS
(1)MAIN FRAME
UL94V-0
UL94V-0
UL94V-0
(2)PCB
(3)PLASTIC PART OF CONNECTOR
25. THE BATTERY VOLTAGE DETECT SIGNALS (BVD1,2)
BVD1
BVD2
Comment
H
H
L
H
L
L
Battery operational
Battery operational, but battery should be replaced
Battery and data integrity is not kept
Note10. The battery voltage detect signals indicate the present state of the battery.
They do not guarantee the data retention.
26.CONCERNING THE SECURITY OF DATA
There is always the possibility that a soft-error (this malfunction is not permanent hence it is called soft and
the data can be restored by rewriting) may occur with semiconductor products.
When keeping the important data within an IC card, remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as
(1) Keeping multiple copies of the data.
(2) Addition of ECC or CRC by software or hardware.
MITSUBISHI
ELECTRIC
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Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
! Warning ( if card with battery / card with auxiliary battery )
(1)Do not charge, short, disassemble, deform, heat, or throw the batteries into fire, as they may ignite, overheat,
rupture or explode.
(2)Place the batteries out of the reach of children. If somebody swallows them, they should see a doctor
immediately.
(3)When discarding or storing the batteries, wrap them individually with cellophane tape or other nonconductive
material. If they are positioned in contact with any other metals or batteries, they may explode, rupture or
leak electrolyte solution.
! Caution
This product is not designed or manufactured for use in a device or system that is used under circumstances in
which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for a
special applications, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear,
or undersea repeater use.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making
your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits,(2)use of
non-flammable material or (3)prevention against any malfunction or mishap.
Notes regarding these materials
lThese materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
l Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-
party’s rights, originating in the use of any product data, diagrams, charts or circuit application examples
contained in these materials.
l All information contained in these materials, including product data, diagrams and charts, represent
information on products at the time of publication of these materials, and are subject to change by Mitsubishi
Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor for the latest product information before purchasing a product listed
herein.
l For instruction on proper use of the IC card, thoroughly read the manual attached to the product before use.
After reading please store the manual in s safe place for future reference.
l The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole
or in part these materials.
l If these products or technologies are subject the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than approved
destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or
the country of destination is prohibited.
l Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor for further details on these materials or the products contained therein.
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ELECTRIC
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Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
OUTLINE(68P-012)
MITSUBISHI
ELECTRIC
16/16
Apr.1999 Rev.1.1
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