M57950L [MITSUBISHI]
HYBRID IC FOR DRIVING TRANSISTOR MODULES; 混合IC驱动晶体管模块
| 型号： | M57950L |
| 厂家： | 
Mitsubishi Group |
| 描述： | HYBRID IC FOR DRIVING TRANSISTOR MODULES |
| 文件： | 总5页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI HYBRID ICs
M57950L
HYBRID IC FOR DRIVING TRANSISTOR MODULES
DESCRIPTION
OUTLINE DRAWING
Dimensions in mm
M57950L is a Hybrid Integrated Circuit designed for driving Transis-
tor Modules QM30DY, QM50DY, etc., in an Inverter application. This
device operates as an isolation amplifier for Transistor Modules due
to the electrical isolation between the input and output, and features
a small outline of 10-pin SIP.
29MAX.
FEATURES
● Electrical isolation between input and output with integrated opto-
coupler.
Viso=2500Vrms
Large load and sink current driving capability
2.54±0.1
0.35±0.2
..................................................................IOL=–1A (MAX)
................................................................ IOLP=–3A (MAX)
2.5MAX.
1.8MAX.
8.5MAX.
10.0MAX.
2.54✕9=22.86±0.3
10
1
● Applicable with TTL input
● Small outline, 10-pin SIP package
APPLICATION
To drive Transistor Modules for Inverter applications
BLOCK DIAGRAM
10
390Ω
9
8
1
Tr1
INTERFACE
CIRCUIT
7
2
Tr2
6
OPTO-COUPLER
5
CIRCUIT DIAGRAM
10
9
Tr1
Tr2
1
PC
8
7
2
6
5
Feb.1999
MITSUBISHI HYBRID ICs
M57950L
HYBRID IC FOR DRIVING TRANSISTOR MODULES
ABSOLUTE MAXIMUM RATINGS (Ta=–20 ~ +70°C, unless otherwise noted)
Symbol
VCC
VEE
VI
Parameter
Supply voltage
Conditions
Ratings
14
Unit
V
DC
DC
Supply voltage
Input voltage
–5
V
Between terminals ➀ and ➁
–1 ~ 7
–1
V
IOH
A
Output current
IOLP
Viso
Tj
Pulse width 10µs, Freq. 2kHz, peak value
Sinewave voltage 60Hz/min.Ta=25°C
3
A
Isolation voltage
2500
100
Vrms
°C
°C
°C
Junction temperature
Operating temperature
Storage temperature
Topg
Tstg
–20 ~ +70
–25 ~ +100
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=8V, unless otherwise noted)
Limits
Symbol
Parameter
Test conditions
Unit
Min.
Typ.
10
–
Max.
–
–
–0.8
–
IIH
“H” input current
VI=5V
mA
A
–
IOH
IOLP
Pd
“H” output current
Rext=9Ω, V=1.6V
Cext=10µF, R2=2Ω
2
–
“L” output peak current
Internal power dissipation
“L-H” propagation delay time
“L-H” rise time
A
–
0.33
5
–
IOH=–0.9A, IOLP=2A, f=2kHz, D.F.=50%
VI=0→4V, Tj=100°C
W
µs
µs
µs
µs
–
10
2
tPLH
tr
–
–
VI=0→4V, Tj=100°C
–
8
15
3
tPHL
tf
“H-L” propagation delay time
“H-L” fall time
VI=5→0V, Tj=100°C
–
–
VI=5→0V, Tj=100°C
Feb.1999
MITSUBISHI HYBRID ICs
M57950L
HYBRID IC FOR DRIVING TRANSISTOR MODULES
PERFORMANCE CURVES
ALLOWABLE POWER DISSIPATION VS.
INTERNAL POWER DISSIPATION VS.
“H” DUTY FACTOR (TYPICAL)
AMBIENT TEMPERATURE
(MAXIMUM RATING)
1000
800
600
400
200
0
1000
CONDITION
V
V
V
CC=10V,VEE=–4V
=5V,f=2kHz
=1.6V
1
800
600
400
200
0
O
I
OH=–0.9A
FOR QM50DY
I
OH=–0.45A
FOR QM30DY
0
20
40
60
80
100
0
20
40
60
80
100
AMBIENT TEMPERATURE Ta (°C)
“H” DUTY FACTOR D. F. (%)
“H” OUTPUT CURRENT VS.
“L” OUTPUT PEAK CURRENT VS.
“H” LIMITING RESISTOR (TYPICAL)
REVERSE SUPPLY VOLTAGE (TYPICAL)
–1000
–800
–600
–400
–200
0
5
4
3
2
1
0
CONDITION
V
CC=10V
f=200Hz, D.F.=1%
=25°C
=10A
T
I
a
C
R
2
=1Ω
Rext=9Ω
FOR QM50DY
CONDITION
V
V
CC=10V,VEE=–4V
R
2
=3.3Ω
IN=5V,V
O
=1.5V
Rext=18Ω
FOR QM30DY
0
4
8
12
16
20
–2.4
–2.8
–3.2
–3.6
–4.0
–4.4
“H” LIMITING RESISTOR Rext (Ω)
REVERSE SUPPLY VOLTAGE VEE (V)
REVERSE SUPPLY VOLTAGE VS.
“L” OUTPUT VOLTAGE (TYPICAL)
PROPAGATION DELAY TIME VS.
AMBIENT TEMPERATURE (TYPICAL)
–3.6
–3.2
–2.8
–2.4
–2.0
–1.6
20
16
12
8
CONDITION
CONDITION
V
R
CC=10V,Rext=9Ω
=1Ω
load:QM50DY
=25°C
V
R
CC=10V,VEE=–3V
2
ext=9Ω,R =1Ω
2
t
t
PLH:VIN=0 4V
PHL:VIN=5 0V
T
a
load:QM50DY
f=200Hz, D.F.=1%
t
t
PHL
PLH
4
0
–2.4
–2.8
–3.2
–3.6
–4.0
–4.4
0
20
40
60
80
100
AMBIENT TEMPERATURE Ta (°C)
“L” OUTPUT VOLTAGE VOL (V)
Feb.1999
MITSUBISHI HYBRID ICs
M57950L
HYBRID IC FOR DRIVING TRANSISTOR MODULES
PROPAGATION DELAY TIME VS.
“H” INPUT VOLTAGE (TYPICAL)
PROPAGATION DELAY TIME VS.
REVERSE SUPPLY VOLTAGE (TYPICAL)
20
16
12
8
20
CONDITION
CONDITION
V
CC=10V,VEE=–3V
V
R
CC=10V,VEE=–3V
ext=9Ω,R =1Ω
Rext=9Ω,R2=1Ω
2
16
12
8
t
t
PLH:VIN=0 4V
PHL:VIN=5 0V
load:QM50DY
f=200Hz, D.F.=1%
Ta=100°C
load:QM50DY
f=200Hz, D.F.=1%
t
PHL
t
PHL
4
4
t
PLH
t
PLH
0
3.6
0
4.0
4.4
4.8
5.2
5.6
–2.4
–2.8
–3.2
–3.6
–4.0
–4.4
“H” INPUT VOLTAGE VIH (V)
REVERSE SUPPLY VOLTAGE VEE (V)
POWER DISSIPATION OF Rext VS.
“H” DUTY FACTOR (TYPICAL)
OUTPUT CHARACTERISTIC OF FULL WAVE
RECTIFYING CIRCUIT WITH CENTER-TAPPED
TRANSFORMER (FOR REFERENCE)
10
8
14
CONDITION
V
CC=10V,VEE=–4V
VO
=1.6V
12
RIPPLE AMPLITUDE
I
OH=–0.9A
6
10
FOR QM50DY
V
O
4
8
6
4
2
I
OH=–0.45A
FOR QM30DY
0
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1.0
“H” DUTY FACTOR D. F. (%)
OUTPUT VOLTAGE VO (V)
I
L
T
C1
V
O
T: 8V, 1A✕2 CENTER-TAPPED TRANSFORMER
: 4700µF, C : 470µF
C1
2
C2
ZD
150Ω
Feb.1999
MITSUBISHI HYBRID ICs
M57950L
HYBRID IC FOR DRIVING TRANSISTOR MODULES
EXPLANATION OF FUNCTION
(cf. Fig. 2, 3, 4, and 5)
(3) With low input level (Vin=0 ~ 1V)
(1) With low input level (Vin=0 ~ 1V)
Tr1 ...... OFF, Tr2 ...... ON
Tr1 ...... OFF, Tr2 ...... ON
The base terminal of transistor module is reverse biased as
stated in (1) after flowing reverse recovery pulse current IOLP.The
steady reverse base current is limited by the internal base-emit-
ter resistor RBE of the transistor module.
The base terminal of transistor module is reverse biased with re-
spect to its emitter by reverse power supply VEE.
(2) With high input level (Vin=4 ~ 5V)
Tr1 ...... ON, Tr2 ...... OFF
The base terminal of transistor module is forward biased and
drived by the current IOH through the resistor Rext.
M57950L Typical application circuit
1/2QM50DY etc.
LOAD
IC
+5V
IO
M57950L
VO
1
2
3
4
5
6
7
8
+
C1
DRIVER
TTL etc.
R2
SINK
10mA
Rext
+
VCC
VIN
Cext
50/60HZ
AC
+
INPUT
VEE
C2
ZD
R1
M57950L Typical operating waveform
VIN
VI
t
t
0
IOH(IB1)
–IO
0
IOLP(IB2)
VOH
VO
0
t
Note: IOH and IOLP correspond to base forward current IB1
and base reverse current IB2 of the transistor module
to be driven respectively.
VOL
Feb.1999
相关型号：
©2020 ICPDF网 联系我们和版权申明