M54532FP [MITSUBISHI]
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE; 带钳位二极管4单元1.5A达林顿晶体管阵列
| 型号： | M54532FP |
| 厂家： | 
Mitsubishi Group |
| 描述： | 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
PIN CONFIGURATION
M54532P and M54532FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
COMMON COM
OUTPUT1
1
2
16 NC
15 →O4 OUTPUT4
14 ←IN4 INPUT4
O1←
INPUT1 IN1→ 3
4
13
GND
GND
5
12
INPUT2 IN2→ 6
11 ←IN3 INPUT3
FEATURES
OUTPUT2
O2← 7
10 →O3 OUTPUT3
Á High breakdown voltage (BVCEO ≥ 50V)
Á High-current driving (Ic(max) = 1.5A)
Á With clamping diodes
COMMON COM
8
9
NC
16P4(P)
Package type 16P2N-A(FP)
Á Wide operating temperature range (Ta = –20 to +75°C)
NC : No connection
CIRCUIT DIAGRAM
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
COM
OUTPUT
340
INPUT
FUNCTION
5.5K
The M54532P and M54532FP each have four circuits con-
sisting of NPN Darlington transistors. They have resistance
of 340Ω between input transistor bases and input pins. A
clamping diode is provided between each output pin (collec-
tor) and COM pin. The output transistor emitters are all con-
nected to the GND pin.
3K
GND
The four circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
The collector current is 1.5A maximum. Collector-emitter
supply voltage is 50V maximum.
The M54532FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Ratings
–0.5 ~ +50
1.5
Symbol
VCEO
IC
Parameter
Collector-emitter voltage
Collector current
Conditions
Unit
V
Output, H
A
Current per circuit output, L
VI
Input voltage
–0.5 ~ +10
50
V
V
VR
Clamping diode reverse voltage
Pulse Width ≤ 10ms, Duty Cycle ≤ 5%
Pulse Width ≤ 100ms, Duty Cycle ≥ 5%
Ta = 25°C, when mounted on board
1.5
IF
Clamping diode forward current
A
1.25
Pd
Power dissipation
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
W
°C
°C
Topr
Tstg
Operating temperature
Storage temperature
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
typ
Symbol
VO
Parameter
Unit
V
min
0
max
50
Output voltage
—
Duty Cycle
Collector current
(Current per 1 cir-
cuit when 4 circuits
are coming on si-
multaneously)
0
0
—
—
1.25
0.7
P : no more than 4%
FP : no more than 2%
IC
A
Duty Cycle
P : no more than 18%
FP : no more than 9%
6
VIH
VIL
“H” input voltage
“L” input voltage
3
0
—
—
V
V
0.4
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol Parameter Test conditions
Limits
typ+
—
Unit
V
min
50
max
—
V
(BR) CEO Collector-emitter breakdown voltage ICEO = 100µA
II = 2mA, IC = 1.25A
II = 2mA, IC = 0.7A
VI = 3V
—
—
1.3
1.1
5
2.2
1.7
8.5
100
2.3
—
VCE (sat)
Collector-emitter saturation voltage
Input current
V
—
mA
µA
V
II
Clamping diode reverse current VR = 50V
Clamping diode forward voltage IF = 1.25A
—
—
IR
VF
hFE
—
1.6
7000
DC amplification factor
VCE = 4V, IC = 1A, Ta = 25°C
800
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Limits
Symbol
Parameter
Test conditions
Unit
min
—
typ
10
max
—
ton
toff
Turn-on time
Turn-off time
ns
ns
CL = 15pF (note 1)
—
500
—
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
VO
50%
50%
Measured device
INPUT
R
L
L
OPEN
OUTPUT
PG
OUTPUT
50%
ton
50%
50Ω
C
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z = 50Ω
= 3VP-P
(2) Input-output conditions : R
(3) Electrostatic capacity C includes floating capacitance at
connections and input capacitance at probes
O
V
P
L
= 8.3Ω, VO = 10V
L
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
2.0
1.5
2.0
I
I = 2mA
M54532P
1.5
M54532FP
1.0
1.0
0.5
0
Ta = 25°C
0.5
0
Ta = –20°C
Ta = 75°C
0
0
0
25
50
75
100
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (°C)
Output saturation voltage VCE (sat) (V)
Duty-Cycle-Collector Characteristics
(M54532P)
Duty-Cycle-Collector Characteristics
(M54532P)
2.0
2.0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
1.5
1.0
0.5
0
1.5
1.0
0.5
0
➀
➀
➁
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
➂
➃
➁
➂
➃
20
40
60
80
100
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M54532FP)
Duty-Cycle-Collector Characteristics
(M54532FP)
2.0
2.0
•The collector current values
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
1.5
1.0
0.5
0
1.5
1.0
0.5
0
➀
➀
➁
➃
➁
➂
➃
➂
20
40
60
80
100
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
Grounded Emitter Transfer Characteristics
5
1.6
1.2
0.8
0.4
0
10
VCE = 4V
7
5
V
CE = 4V
3
2
Ta = 75°C
4
7
5
10
Ta = 25°C
Ta = –20°C
3
2
Ta = 75°C
Ta = 25°C
Ta = –20°C
3
10
7
5
3
2
2
10
1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
0
0.5
1.0
1.5
(V)
2.0
Collector current Ic (mA)
Input voltage V
I
Input Characteristics
Clamping Diode Characteristics
2.0
25
Ta = 25°C
Ta = –20°C
20
1.5
1.0
0.5
0
15
10
Ta = 75°C
Ta = 25°C
5
0
Ta = 75°C
Ta = –20°C
0
0.5
1.0
1.5
(V)
2.0
0
2
4
6
8
10
Input voltage V
I
(V)
Forward bias voltage V
F
Aug. 1999
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