M54534FP [MITSUBISHI]
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE; 带钳位二极管和频闪6 -UNIT 320毫安晶体管阵列
| 型号： | M54534FP |
| 厂家： | 
Mitsubishi Group |
| 描述： | 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
| 文件： | 总5页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
DESCRIPTION
PIN CONFIGURATION (TOP VIEW)
M54534P and M54534FP are six-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
STROBE INPUT STB→
1
2
3
4
5
6
7
8
16
VCC
15 →O1
14 →O2
13 →O3
12 →O4
11 →O5
10 →O6
IN1→
IN2→
IN3→
INPUT
OUTPUT
IN4→
FEATURES
IN5→
IN6→
GND
●
Medium breakdown voltage (BVCEO ≥ 20V)
● High-current driving (Ic(max) =320mA)
● With clamping diodes
9
COM COMMON
● Wide input voltage range (VI = –25 to +20V)
● Wide operating temperature range (Ta = –20 to +75°C)
16P4(P)
Outline 16P2N-A(FP)
●
With strobe input
CIRCUIT SCHEMATIC (EACH CIRCUIT)
APPLICATION
380
V
CC
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps).
COM
1.6k
INPUT
OUTPUT
20k
2k
FUNCTION
GND
The M54534P and M54534FP each have six circuits consist-
ing of NPN transistors. Each input has a diode and 1.6kΩ
esistor in series. Each input is connected, and each output
is connected spike-killer clamping diode, emitters of each
transistor is connected to GND (pin 8), strobe input is con-
nected to (pin 1), clamping diode is connected COM pin (pin
9) and VCC is connected to the pin 16 in common.
The collector current is 320mA maximum. Collector-emitter
supply voltage is 20V maximum.
STB
STROBE INPUT
The six circuits share the STB, COM, VCC, GND.
The diodes shown by broken line are parasite diodes and must not
be use.
Unit : Ω
M54534FP is enclosed in a molded small flat package, en-
abling space-saving design.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
VCEO
IC
Parameter
Conditions
Ratings
10
Unit
V
Supply voltage
Collector-emitter voltage
Collector current
Output, H
–0.5 ~ +20
320
V
Current per circuit output, L
mA
V
VI
–25 ~ +20
–0.5~ +20
320
Input voltage
V(STB)
IF
Strobe input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
V
mA
V
VR
20
Pd
1.47/1.00
–20 ~ +75
–55 ~ +125
Ta = 25°C, when mounted on board
W
°C
°C
Topr
Tstg
Operating temperature
Storage temperature
Aug.1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
FUNCTIONAL TABLE
IN
L
STB
L
OUT
H
H
L
L
H
H
H
H
H
L
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
Symbol
Parameter
Unit
min
3
typ
—
max
8
Supply voltage
Output voltage
VCC
VO
V
V
0
—
20
VCC = 6.5V, Duty Cycle
P : no more than 25%
FP : no more than 15%
VCC = 6.5V, Duty Cycle
P : no more than 65%
FP : no more than 35%
—
—
0
0
300
Collector current
Per channel
mA
IC
150
“H” Input voltage
“L” Input voltage
18
0.7
18
VIH
3.2
0
—
—
—
—
V
V
V
V
VIL
“H” Input voltage (strobe input)
“L” Input voltage (strobe input)
2.4
0
VIH(STB)
VIL(STB)
0.2
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol Parameter Test conditions
Collector-emitter breakdown voltage VCC = 8V, VI = 3.2V, VI(STB) = 0.2V, ICEO = 100µA
Limits
typ+
—
Unit
V
min
20
max
—
V
(BR) CEO
VI = 3.2V
VI(STB) = 2.4V
VCC = 6.5V, IC = 250mA
VCC = 3V, IC = 120mA
—
—
—
—
—
—
—
—
—
0.3
0.15
0.5
—
0.85
0.5
VCE (sat)
Collector-emitter saturation voltage
V
1.4
II
Input current
VCC = 8V, VI = 3.2V, VI(STB) = 2.4V
VCC = 8V, VI = –25V
mA
µA
mA
µA
V
IIR
Input reverse current
Strobe input current
Strobe input reverse current
–20
–20
20
II(STB)
–7.9
—
VCC = 8V, VI = 3.2V (all input), VI(STB) = 0.2V
VCC = 8V, VI = 0V, VI(STB) = 20V
IR(STB)
VF
1.4
—
2.4
Clamping diode forward voltage IF = 320mA
IR
Clamping diode reverse current
Supply current
100
200
µA
mA
VR = 20V
ICC
120
VCC = 8V, VI = 3.2V (all input), VI(STB) = 2.4V
VCE = 4V, VCC = 6.5V, IC = 300mA, Ta = 25°C,
VI(STB) = 2.4V
hFE
DC amplification factor
1000
3000
—
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Limits
Symbol
Parameter
Test conditions
Unit
min
—
typ
22
1200
max
—
ton
toff
Turn-on time
Turn-off time
ns
ns
CL = 15pF (note 1)
—
—
Aug.1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
VCC
VO
50%
50%
Measured device
OPEN
INPUT
R
L
L
OUTPUT
PG
STB
50Ω
OUTPUT
C
50%
ton
50%
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z = 50Ω
= 3.2VP-P
(2) Input-output conditions : R
(3) Electrostatic capacity C includes floating capacitance at
connections and input capacitance at probes
O
V
P
L
= 40Ω, VO = 10V, VCC = VSTB = 6.5V
L
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
2.0
400
M54534P
M54534FP
1.5
1.0
0.5
0
300
200
100
0
V
V
V
I = 3.2V
CC = 3V
STB = 2.4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
0
25
50
75
100
0
0.1
0.2
0.3
0.4
0.5
Ambient temperature Ta (°C)
Output saturation voltage VCE (sat) (V)
Duty-Cycle-Collector Characteristics
(M54534P)
Duty-Cycle-Collector Characteristics
(M54534P)
400
400
1,2
1~3
300
200
100
0
300
200
100
0
4
5
6
3
4
5
6
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C, VCC = 6.5V
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C, VCC = 6.5V
0
20
40
60
80
100
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Aug.1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
Duty-Cycle-Collector Characteristics
Duty-Cycle-Collector Characteristics
(M54534FP)
(M54534FP)
400
400
1,2
3
1
2
300
200
100
0
300
200
100
0
4
5
6
3
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C, VCC = 6.5V
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C, VCC = 6.5V
4
5
6
100
0
20
40
60
80
100
0
20
40
60
80
Duty cycle (%)
Duty cycle (%)
DC Amplification Factor
Grounded Emitter Transfer Characteristics
Collector Current Characteristics
104
7
400
300
200
100
0
V
V
CC = 6.5V, VI(STB) = 2.4V
CE = 4V
5
Ta = 75°C
Ta = 25°C
Ta = –20°C
3
103
7
5
V
V
CC = 6.5V, VI(STB) = 2.4V
CE = 4V
Ta = 75°C
3
Ta = 25°C
Ta = –20°C
102
101
3
5
7
102
3
5
7
103
0
1
2
3
4
Collector current Ic (mA)
Input voltage VI (V)
Input Characteristics
Supply Current Characteristics (common)
10
200
150
100
50
V
V
CC = 8V
STB = 2.4V
V
STB = 2.4V
= 3.2V
Ta = 75°C
V
I
8
6
4
2
0
Ta = 75°C
Ta = 25°C
Ta = –20°C
Ta = 25°C
Ta = –20°C
0
0
5
10
15
(V)
20
0
2
4
6
8
10
Input voltage V
I
Supply voltage VCC (V)
Aug.1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
Clamping Diode Characteristics
400
300
200
100
0
Ta = 75°C
Ta = 25°C
Ta = –20°C
0
0.5
1.0
1.5
(V)
2.0
Forward bias voltage V
F
Aug.1999
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