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FX70SMJ-03 [MITSUBISHI]

HIGH-SPEED SWITCHING USE; 高速开关使用
FX70SMJ-03
型号： FX70SMJ-03
厂家： Mitsubishi Group    Mitsubishi Group
描述：

HIGH-SPEED SWITCHING USE
高速开关使用

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MITSUBISHI Pch POWER MOSFET  
FX70SMJ-03  
HIGH-SPEED SWITCHING USE  
FX70SMJ-03  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
15.9 max  
1.5  
4
φ 3.2  
2
4.4  
G
1.0  
5.45  
1
2
3
5.45  
0.6  
2.8  
4
3
4V DRIVE  
•
1
2
3
4
GATE  
DRAIN  
SOURCE  
DRAIN  
1
VDSS ............................................................... –30V  
rDS (ON) (MAX) ............................................. 12.3mΩ  
•
•
ID .................................................................... –70A  
Integrated Fast Recovery Diode (TYP.) ...........70ns  
•
2
4
•
TO-3P  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
–30  
±20  
–70  
V
A
IDM  
IDA  
Drain current (Pulsed)  
–280  
–70  
A
Avalanche drain current (Pulsed) L = 10µH  
Source current  
A
IS  
–70  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
–280  
A
PD  
150  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
4.8  
Tstg  
—
Storage temperature  
Weight  
Typical value  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX70SMJ-03  
HIGH-SPEED SWITCHING USE  
ELECTRICAL CHARACTERISTICS (Tch = 25°C)  
Symbol Parameter  
Limits  
Unit  
Test conditions  
Min.  
–30  
—
Typ.  
—
Max.  
—
ID = –1mA, VDS = 0V  
V
(BR) DSS Drain-source breakdown voltage  
V
µA  
mA  
V
VGS = ±20V, VDS = 0V  
VDS = –30V, VGS = 0V  
ID = –1mA, VDS = –10V  
ID = –35A, VGS = –10V  
ID = –26A, VGS = –4V  
ID = –35A, VGS = –10V  
ID = –35A, VDS = –10V  
IGSS  
IDSS  
Gate-source leakage current  
Drain-source leakage current  
Gate-source threshold voltage  
Drain-source on-state resistance  
Drain-source on-state resistance  
Drain-source on-state voltage  
Forward transfer admittance  
Input capacitance  
—
±0.1  
–0.1  
–2.3  
12.3  
25  
—
—
VGS (th)  
rDS (ON)  
rDS (ON)  
VDS (ON)  
yfs  
–1.3  
—
–1.8  
10.0  
19  
mΩ  
mΩ  
V
—
—
–0.35  
55.8  
11140  
2300  
1000  
85  
–0.43  
—
—
S
Ciss  
—
—
pF  
pF  
pF  
ns  
VDS = –10V, VGS = 0V, f = 1MHz  
Coss  
Crss  
Output capacitance  
—
—
Reverse transfer capacitance  
Turn-on delay time  
—
—
td (on)  
tr  
—
—
Rise time  
—
228  
751  
360  
–1.0  
—
—
ns  
VDD = –15V, ID = –35A, VGS = –10V, RGEN = RGS = 50Ω  
td (off)  
tf  
Turn-off delay time  
—
—
ns  
Fall time  
—
—
ns  
IS = –35A, VGS = 0V  
Channel to case  
VSD  
Source-drain voltage  
Thermal resistance  
—
–1.5  
0.83  
—
V
Rth (ch-c)  
trr  
—
°C/W  
ns  
IS = –35A, dis/dt = 50A/µs  
Reverse recovery time  
—
70  
PERFORMANCE CURVES  
POWER DISSIPATION DERATING CURVE  
MAXIMUM SAFE OPERATING AREA  
250  
200  
150  
100  
50  
–3  
–2  
tw = 100µs  
–102  
–7  
–5  
1ms  
–3  
–2  
10ms  
–101  
–7  
–5  
DC  
TC = 25°C  
Single Pulse  
–3  
–2  
–100  
–7  
–5  
0
0
1
2
–2  
–2 –3 –5–7  
–10  
–2 –3 –5–7  
–10  
–2 –3 –5–7  
–10  
0
50  
100  
150  
200  
CASE TEMPERATURE TC (°C)  
DRAIN-SOURCE VOLTAGE VDS (V)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
–100  
–80  
–60  
–40  
–20  
0
–50  
–40  
–30  
–20  
–10  
0
–6V  
–5V  
–8V  
–6V  
VGS = –10V  
–8V  
VGS = –10V  
PD = 150W  
–4V  
–5V  
–4V  
–3V  
Tc = 25°C  
Pulse Test  
Tc = 25°C  
Pulse Test  
–3V  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
0
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
DRAIN-SOURCE VOLTAGE VDS (V)  
DRAIN-SOURCE VOLTAGE VDS (V)  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX70SMJ-03  
HIGH-SPEED SWITCHING USE  
ON-STATE VOLTAGE VS.  
GATE-SOURCE VOLTAGE  
(TYPICAL)  
ON-STATE RESISTANCE VS.  
DRAIN CURRENT  
(TYPICAL)  
–2.0  
–1.6  
–1.2  
–0.8  
–0.4  
0
40  
32  
24  
16  
8
Tc = 25°C  
Pulse Test  
Tc = 25°C  
Pulse Test  
I
D
= –100A  
V
GS = –4V  
–70A  
–35A  
–10V  
0
1
2
3
–100  
–10  
–2 –3 –5 –7  
–10  
–2 –3 –5–7  
–2 –3 –5–7  
–10  
0
–2  
–4  
–6  
–8  
–10  
GATE-SOURCE VOLTAGE  
VGS (V)  
DRAIN CURRENT  
ID  
(A)  
FORWARD TRANSFER ADMITTANCE  
VS.DRAIN CURRENT  
(TYPICAL)  
TRANSFER CHARACTERISTICS  
(TYPICAL)  
–100  
–80  
–60  
–40  
–20  
0
102  
7
Tc = 25°C  
V
DS = –10V  
VDS = –10V  
Pulse Test  
5
4
3
Pulse Test  
2
TC = 125°C  
75°C  
25°C  
101  
7
5
4
3
2
100  
1
2
–100  
–10  
–2 –3 –5 –7  
–2 –3 –5 –7  
–10  
0
–2  
–4  
–6  
–8  
–10  
GATE-SOURCE VOLTAGE  
VGS (V)  
DRAIN CURRENT ID (A)  
CAPACITANCE VS.  
DRAIN-SOURCE VOLTAGE  
(TYPICAL)  
SWITCHING CHARACTERISTICS  
(TYPICAL)  
103  
7
2
t
d(off)  
Tch = 25°C  
105  
7
5
f = 1MH  
Z
5
4
3
t
t
f
V
GS = 0V  
3
2
r
2
Ciss  
104  
7
5
t
d(on)  
102  
7
Coss  
Crss  
3
2
5
4
3
103  
7
5
Tch = 25°C  
GS = –10V  
DD = –15V  
V
V
R
2
3
2
GEN = RGS = 50Ω  
101  
0
1
0
1
2
–2 –3 –5  
–3 –5 –7  
–2 –3 –5 –7  
–2 –3  
DS (V)  
–5–7  
–2 –3 –5–7  
–2 –3 –5–7  
–10  
–10  
–10  
–10  
–10  
DRAIN-SOURCE VOLTAGE  
V
DRAIN CURRENT ID (A)  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX70SMJ-03  
HIGH-SPEED SWITCHING USE  
GATE-SOURCE VOLTAGE  
VS.GATE CHARGE  
(TYPICAL)  
SOURCE-DRAIN DIODE  
FORWARD CHARACTERISTICS  
(TYPICAL)  
–10  
–8  
–6  
–4  
–2  
0
–100  
–80  
–60  
–40  
–20  
0
Tch = 25°C  
V
GS = 0V  
I
D
= –70A  
Pulse Test  
VDS = –10V  
–20V  
–25V  
TC = 25°C  
75°C  
125°C  
0
40  
80  
120  
160  
(nC)  
200  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
GATE CHARGE  
Q
g
SOURCE-DRAIN VOLTAGE VSD (V)  
ON-STATE RESISTANCE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
THRESHOLD VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
101  
7
–4.0  
–3.2  
–2.4  
–1.6  
–0.8  
0
V
GS = –10V  
V
DS = –10V  
= –1mA  
I
D
= 1/2I  
D
I
D
5
4
3
Pulse Test  
2
100  
7
5
4
3
2
10–1  
–50  
0
50  
100  
150  
–50  
0
50  
100  
150  
CHANNEL TEMPERATURE Tch (°C)  
CHANNEL TEMPERATURE Tch (°C)  
BREAKDOWN VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTICS  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
101  
7
V
GS = 0V  
5
I
D = –1mA  
3
2
100  
7
5
D = 1.0  
0.5  
3
2
0.2  
0.1  
P
DM  
10–1  
tw  
7
5
T
0.05  
0.02  
0.01  
Single Pulse  
tw  
D
=
3
2
T
10–2  
–3  
–2  
–1  
0
1
2 3 57  
10 10  
2
10–4  
10  
10  
10  
10  
2 3 57  
2 3 57  
2 3 57  
2 3 57  
2 3 57  
–50  
0
50  
100  
150  
CHANNEL TEMPERATURE Tch (°C)  
PULSE WIDTH tw (s)  
Jan.1999  

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