CR3PM-12AB [MITSUBISHI]
Silicon Controlled Rectifier, 4.7A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element;
| 型号： | CR3PM-12AB |
| 厂家： | 
Mitsubishi Group |
| 描述： | Silicon Controlled Rectifier, 4.7A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element 局域网 栅 栅极 |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Dimensions
CR3PM
OUTLINE DRAWING
in mm
10.5 MAX
2.8
5.2
TYPE
NAME
φ3.2±0.2
1.3 MAX
VOLTAGE
CLASS
0.8
2.54
2.54
0.5
2.6
Measurement point of
case temperature
1 2 3
• IT (AV) ...........................................................................3A
• VDRM ..............................................................400V/600V
• IGT .........................................................................100µA
• Viso........................................................................ 1500V
• UL Recognized: File No. E80276
2
1
CATHODE
ANODE
GATE
1
2
3
3
TO-220F
APPLICATION
TV sets, control of household equipment such as electric blankets, other general purpose control
applications
MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Voltage class
Symbol
Parameter
Unit
8
12
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
400
500
320
400
320
600
720
480
600
480
V
V
V
V
V
VRSM
VR (DC)
VDRM
✽1
✽1
Repetitive peak off-state voltage
DC off-state voltage
VD (DC)
Symbol
Parameter
RMS on-state current
Average on-state current
Surge on-state current
Conditions
Ratings
4.7
Unit
A
IT (RMS)
IT (AV)
ITSM
Commercial frequency, sine half wave, 180° conduction, Tc=103°C
3.0
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive
70
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
24.5
A s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
0.5
W
W
V
0.1
6
6
V
0.3
A
–40 ~ +125
–40 ~ +125
2.0
°C
°C
g
Tstg
—
Typical value
Viso
Isolation voltage
Ta=25°C, AC 1 minute, each terminal to case
1500
V
✽1. With gate to cathode resistance RGK=220Ω.
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
Typ.
—
Max.
2.0
2.0
1.6
0.8
—
mA
mA
V
IRRM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Tj=125°C, VRRM applied, RGK=220Ω
Tj=125°C, VDRM applied, RGK=220Ω
Tc=25°C, ITM=10A, instantaneous value
Tj=25°C, VD=6V, IT=0.1A
IDRM
VTM
VGT
—
—
—
—
—
—
V
Gate trigger voltage
0.1
1
—
VGD
IGT
Gate non-trigger voltage
Gate trigger current
Tj=125°C, VD=1/2VDRM, RGK=220Ω
Tj=25°C, VD=6V, IT=0.1A
V
✽3
—
100
4.1
µA
°C/W
✽2
—
—
Rth (j-c)
Thermal resistance
Junction to case
✽2. The contact thermal resistance Rth (c-f) is 0.5°C/W with greased.
✽3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
A
B
C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 220Ω resistance between the gate and cathode.
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
102
100
90
80
70
60
50
40
30
20
10
0
7
5
Tc = 25°C
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
102
7
TYPICAL EXAMPLE
7
5
5
I
GT (25°C)
# 1 45µA
# 2 18µA
3
2
3
2
# 2
VFGM = 6V
PGM = 0.5W
101
7
102
7
5
# 1
5
3
2
PG(AV) = 0.1W
3
2
V
GT = 0.8V
100
7
101
7
5
3
2
I
GT = 200µA
5
3
2
(Tj = 25°C)
I
FGM = 0.3A
10–1
7
VGD = 0.1V
5
100
10–12 3 57100 2 3 57101 2 3 57102 2 3
–40 –20
0
20 40 60 80 100 120
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
1.0
102
7
5
DISTRIBUTION
TYPICAL EXAMPLE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3
2
101
7
5
3
2
100
7
5
3
2
10–1
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
–40 –20
0
20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
8
160
RESISTIVE,
INDUCTIVE
LOADS
7
140
120
100
80
θ
θ
180°
360°
360°
6
5
4
3
2
1
0
120°
90°
RESISTIVE,
INDUCTIVE
LOADS
60°
θ = 30°
θ = 30°
90° 180°
60° 120°
60
40
20
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
160
8
NATURAL
CONVECTION
WITHOUT FIN
140
7
θ
θ
θ
180°
360°
360°
120
100
80
60
40
20
0
6
5
4
3
2
1
0
120°
RESISTIVE,
INDUCTIVE
LOADS
90°
θ = 180°
120°
90°
60°
30°
RESISTIVE
LOADS
60°
θ = 30°
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
1.0
2.0
3.0
4.0
5.0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
160
NATURAL
CONVECTION
WITHOUT FIN
140
120
100
80
140
θ
θ
360°
120
100
80
60
40
20
0
RESISTIVE
θ = 180°
LOADS
120°
90°
60°
30°
θ = 30° 60° 90° 120° 180°
60
θ
θ
40
360°
20
RESISTIVE
LOADS
0
0
1.0
2.0
3.0
4.0
5.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
160
140
120
100
80
102
7
VD
= 12V
TYPICAL EXAMPLE
5
RGK = 1kΩ
RGK = 220Ω
3
2
DISTRIBUTION
101
7
TYPICAL EXAMPLE
5
3
2
60
100
7
5
40
3
2
20
0
10–1
–40–20 0 20 40 60 80 100120140160
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
TURN-ON TIME VS. GATE CURRENT
400
350
300
250
200
150
100
50
101
TYPICAL EXAMPLE
IGT (25°C)
VD = 100V
Ta = 25°C
TYPICAL
7
5
4
# 1 25µA
# 2 50µA
# 1
EXAMPLE
3
IGT (25°C)
2
# 33µA
# 2
#
100
7
5
4
3
2
0
10–1
100
2
3 4 5 7 101
2
3 4 5 7 102
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
GATE CURRENT (mA)
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
80
160
IT = 2A
VD = 50V, VR = 50V
dv/dt = 5V/µs
TYPICAL EXAMPLE
70
60
50
40
30
20
10
0
140
120
100
80
60
TYPICAL
EXAMPLE
40
DISTRIBUTION
20
0
0
20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7
5
tw
TYPICAL EXAMPLE
3
2
0.1s
103
7
5
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
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