CR3PM-12D-A8 [RENESAS]
SILICON CONTROLLED RECTIFIER,600V V(DRM),3A I(T),TO-220AB(FP);
| 型号： | CR3PM-12D-A8 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | SILICON CONTROLLED RECTIFIER,600V V(DRM),3A I(T),TO-220AB(FP) 栅 栅极 |
| 文件： | 总10页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
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April 1st, 2010
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CR3PM-12
Thyristor
Low Power Use
REJ03G0357-0200
Rev.2.00
Mar.01.2005
Features
•
•
•
•
IT (AV) : 3 A
•
•
•
Insulated Type
Glass Passivation Type
UL Recognized : Yellow Card No. E223904
File No. E80271
VDRM : 600 V
IGT : 100 µA
Viso : 1500 V
Outline
PRSS0003AA-A
(Package name: TO-220F)
2
1. Cathode
2. Anode
3. Gate
3
1
1
2
3
Applications
TV sets, control of household equipment such as electric blanket, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
VRRM
VRSM
600
720
480
600
480
V
V
V
V
V
VR (DC)
VDRM
VD (DC)
Rev.2.00, Mar.01.2005, page 1 of 7
CR3PM-12
Parameter
Symbol
IT (RMS)
IT (AV)
Ratings
4.7
Unit
A
Conditions
RMS on-state current
Average on-state current
3.0
A
Commercial frequency, sine half wave
180° conduction, Tc = 103°C
Surge on-state current
I2t for fusing
ITSM
I2t
70
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
24.5
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
0.5
W
W
V
0.1
6
6
0.3
V
A
– 40 to +125
– 40 to +125
2.0
°C
°C
g
Tstg
—
Typical value
Isolation voltage
Viso
1500
V
Ta = 25°C, AC 1 minute,
each terminal to case
Notes: 1. With gate to cathode resistance RGK = 220 Ω.
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
—
—
2.0
mA
Tj = 125°C, VRRM applied,
RGK = 220 Ω
Repetitive peak off-state current
On-state voltage
IDRM
VTM
—
—
—
—
2.0
1.6
mA
V
Tj = 125°C, VDRM applied,
RGK = 220 Ω
Tc = 25°C, ITM = 10 A,
instantaneous value
Gate trigger voltage
VGT
VGD
—
—
—
0.8
—
V
V
Tj = 25°C, VD = 6 V, IT = 0.1 A
Gate non-trigger voltage
0.1
Tj = 125°C, VD = 1/2 VDRM
RGK = 220 Ω
Gate trigger current
Thermal resistance
IGT
1
—
—
100Note3
4.1
µA
Tj = 25°C, VD = 6 V, IT = 0.1 A
Junction to caseNote2
Rth (j-c)
—
°C/W
Notes: 2. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
3. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 220 Ω resistance between the gate and
cathode.
Rev.2.00, Mar.01.2005, page 2 of 7
CR3PM-12
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
100
90
80
70
60
50
40
30
20
10
0
Tc = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3 4 5 7 101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
102
103
7
7
5
Typical Example
5
I
(25°C)
GT
3
2
3
2
# 1 45µA
# 2 18µA
# 2
V
= 6V
P
= 0.5W
GM
FGM
101
7
102
7
5
3
2
# 1
5
3
2
P
= 0.1W
G(AV)
V
GT
= 0.8V
100
7
101
7
5
3
2
I
= 100µA
GT
(Tj = 25°C)
5
3
2
I
= 0.3A
FGM
10–1
7
V
= 0.1V
GD
5
100
5710–123 57100 23 57101 23 57102 23
–40 –20
0
20 40 60 80 100 120
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
102
7
5
3
2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Distribution
Typical Example
101
7
5
3
2
100
7
5
3
2
10–1
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
–40 –20
0
20 40 60 80 100 120
Junction Temperature (°C)
Time (s)
Rev.2.00, Mar.01.2005, page 3 of 7
CR3PM-12
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
8
160
140
120
100
80
7
6
5
4
3
2
1
0
θ
180°
360°
120°
90°
Resistive,
inductive loads
60°
θ = 30°
θ = 30°
90° 180°
60° 120°
60
θ
40
360°
20
Resistive,
inductive loads
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
Maximum Average Power Dissipation
(Single-Phase Full Wave)
(Single-Phase Half Wave)
160
140
120
100
80
8
7
6
5
4
3
2
1
0
Resistive,
inductive loads
Natural convection
θ
180°
120°
360°
90°
60°
θ = 180°
120°
90°
θ = 30°
60°
30°
60
40
θ
θ
360°
20
Resistive loads
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
0
1.0
2.0
3.0
4.0
5.0
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
140
120
100
80
160
140
120
100
80
θ = 180°
120°
90°
θ = 30° 60° 90° 120° 180°
60°
30°
60
60
θ
θ
θ
θ
40
40
360°
360°
20
20
Resistive
loads
Resistive loads
Natural convection
0
0
0
1.0
2.0
3.0
4.0
5.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
Average On-State Current (A)
Rev.2.00, Mar.01.2005, page 4 of 7
CR3PM-12
Breakover Voltage vs.
Junction Temperature
Holding Current vs.
Junction Temperature
160
140
120
100
80
102
7
R
= 220Ω
V
R
= 12V
Typical Example
GK
D
5
= 1kΩ
GK
3
2
Distribution
101
7
5
3
2
Typical Example
60
100
7
5
40
3
2
20
0
10–1
–40–20 0 20 40 60 80 100120140160
–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Turn-On Time vs.
Gate Current
400
101
7
5
4
V
= 100V
D
Typical Example
(25°C)
# 1
# 2
Ta = 25°C
Typical Example
I
GT
25µA
50µA
350
300
250
200
150
100
50
I
(25°C)
GT
# 33µA
# 1
3
2
# 2
#
100
7
5
4
3
2
0
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
100
2
3
4 5 7 101
2 3
4 5 7 102
Gate to Cathode Resistance (kΩ)
Gate Current (mA)
Turn-Off Time vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
80
70
60
50
40
30
20
10
0
160
140
120
100
80
I
V
V
= 2A
T
Typical Example
= 50V
= 50V
D
R
dv/dt = 5V/µs
60
Typical Example
Distribution
40
20
0
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Rev.2.00, Mar.01.2005, page 5 of 7
CR3PM-12
Gate Trigger Current vs.
Gate Current Pulse Width
104
7
5
tw
Typical Example
3
2
0.1s
103
7
5
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Current Pulse Width (µs)
Rev.2.00, Mar.01.2005, page 6 of 7
CR3PM-12
Package Dimensions
JEITA Package Code
SC-67
RENESAS Code
Package Name
TO-220F
MASS[Typ.]
2.0g
Unit: mm
PRSS0003AA-A
10.5Max
5.2
10.5Max
5.2
2.8
2.8
φ3.2 ± 0.2
1.3Max
φ3.2 ± 0.2
1.3Max
0.8
0.8
2.54
2.54
0.5
2.6
2.54
2.54
0.5
2.6
Note: It applies to BCR2PM-12
Order Code
Standard order
code example
Lead form
Standard packing
Quantity
Standard order code
Straight type
Lead form
Vinyl sack
Tube
100 Type name
50 Type name – Lead forming code
CR3PM-12
CR3PM-12-A8
Note : Please confirm the specification about the shipping in detail.
Rev.2.00, Mar.01.2005, page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0
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