61090-002 [MII]
SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR; 表面贴装（ NPN ）通用晶体管
| 型号： | 61090-002 |
| 厂家： | 
Micropac Industries |
| 描述： | SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR |
| 文件： | 总2页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
61090
SURFACE MOUNT (NPN)
GENERAL PURPOSE TRANSISTOR
(2N2222AUB)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Applications:
•
•
•
•
Hermetically sealed
Miniature package to minimize circuit board area
Ceramic surface mount package
Footprint and pin-out matches SOT-23 packaged
transistors
•
•
•
•
Analog Switches
Signal Conditioning
Small Signal Amplifiers
High Density Packaging
•
MIL-PRF-19500 screening available
DESCRIPTION
The 61090 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic
package is ideal for designs where board space and device weight are important requirements. This device is available
custom binned to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage...............................................................................................................................................................75V
Collector-Emitter Voltage............................................................................................................................................................50V
Emitter-Collector Voltage..............................................................................................................................................................6V
Continuous Collector Current ............................................................................................................................................... 800mA
Power Dissipation (Derate at the rate of 3.33 mW/°C above 25°C) .................................................................................. 500mW
Maximum Junction Temperature..........................................................................................................................................+200°C
Operating Temperature (See part selection guide for actual operating temperature) ......................................... -65°C to +200°C
Storage Temperature............................................................................................................................................. -65°C to +200°C
Lead Soldering Temperature (vapor phase reflow for 30 seconds) .....................................................................................215°C
Package Dimensions
Schematic Diagram
ORIENTATION KEY
0.054 [1.37]
0.046 [1.17]
C
3
3
0.105 [2.67]
0.085 [2.16]
E
B
0.036 [0.91]
0.024 [0.61]
3 PLACES
2
1
2
1
0.024 [0.61]
0.016 [0.41]
0.125 [3.18]
0.115 [2.92]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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61090
SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUB)
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER
SYMBOL
MIN
MAX
UNITS
TEST CONDITIONS
NOTE
Collector-Base Breakdown Voltage
75
V
BV
I
= 10µA, I = 0
CBO
C E
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
50
6
V
V
nA
BV
BV
I
C
I
= 10mA, I = 0µA
CEO
EBO
B
= 0, I = 10µA
E
C
10
10
I
V = 60V, I = 0
CB E
CBO
µA
V
= 60V, I = 0, T = 150°C
CB
E
A
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
50
10
nA
nA
I
V
= 50V
CES
CE
I
V
= 4.0V, I =0
EB C
EBO
50
75
-
-
-
-
-
-
h
fe1
h
fe2
h
fe3
h
fe4
h
fe5
h
fe6
V
= 10V, I = 0.1mA
C
CE
325
300
V
= 10V, I =1mA
C
CE
Forward-Current Transfer Ratio
100
100
30
V
= 10V, I =10mA
C
CE
1
1
V
CE
V
CE
= 10V, I = 150mA
C
= 10V, I = 500mA
C
35
V
CE
= 10V, I = 10mA @ -55°C
C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.30
V
1
I
= 150mA, I = 15mA
B
V
V
C
CE (SAT)
1.0
V
V
1
1
I
C
= 500mA, I = 50mA
B
0.6
1.20
I
C
= 150mA, I = 15mA
B
BE (SAT)
2.0
V
1
I
C
= 500mA I = 50mA
B
SMALL-SIGNAL CHARACTERISTICS
Small Signal Forward Current Transfer Ratio
50
2.5
-
-
h
h
V
= 10V, I = 1mA, f = 1kHz
fe
fe
CE C
Small Signal Forward Current Transfer Ratio
V
CE
= 20V, I = 20mA,
C
f = 100kHz
Open Circuit Output Capacitance
Input Capacitance (Output Open Capacitance)
Turn-On Time
8
25
35
pf
pf
ns
C
OBO
V
CB
= 10V, 100kHz, < f < 1 MHz
= 0.5 V, 100kHz, < f < 1 MHz
= 30V, I = 150mA,
CC C
C
IBO
V
EB
t
on
V
I
= 15mA
B1
Turn-Off Time
300
ns
t
off
V
CC
I
= 30V, I = 150mA,
C
= I = 15mA
B2
B1
NOTES:
1.
Pulse width < 300µs, duty cycle < 2.0%.
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
10
5
MAX
150
20
UNITS
mA
V
Bias Voltage-Collector/Emitter
Collector-Emitter Voltage
I
V
C
SELECTCIOE N GUIDE
PART NUMBER
PART DESCRIPTION
61090-001
61090-002
61090-101
61090-102
61090-300
2N2222AUB PNP transistor, commercial version
2N2222AUB PNP transistor, JAN level screening
2N2222AUB PNP transistor, JANTX level screening
2N2222AUB PNP transistor, JANTXV level screening
2N2222AUB PNP transistor, JANS level screening
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
8 - 9
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