61096-001 [ETC]
BJT ; BJT\n
| 型号： | 61096-001 |
| 厂家： | 
ETC |
| 描述： | BJT
|
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
61096
GENERAL PURPOSE (NPN) TRANSISTOR
(2N2222A)
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Applications:
•
•
Hermetically sealed
Rugged package-able to withstand high
acceleration load
TO-18 package
MIL-PRF-19500 screening available
•
•
•
•
Analog Switches
Signal Conditioning
Small Signal Amplifiers
High Density Packaging
•
•
DESCRIPTION
The 61096 is a hermetically sealed general purpose switching transistor in a TO-18 package. This rugged package is able to
withstand high acceleration loads and is ideal for designs where durability and device weight are important requirements. This
device is available custom binned to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage .............................................................................................................................................................. 75V
Collector-Emitter Voltage ........................................................................................................................................................... 50V
Emitter-Collector Voltage ............................................................................................................................................................. 6V
Continuous Collector Current................................................................................................................................................800mA
Power Dissipation (Derate at the rate of 3.33 mW/°C above 25°C) ..................................................................................500mW
Maximum Junction Temperature ......................................................................................................................................... +200°C
Operating Temperature (See part selection guide for actual operating temperature) .........................................-65°C to +200°C
Storage Temperature.............................................................................................................................................-65°C to +200°C
Lead Soldering Temperature (vapor phase reflow for 30 seconds) ..................................................................................... 215°C
Package Dimensions
Schematic Diagram
COLLECTOR
Ø0.100 [Ø2.54]
BASE
3
3
C
2
[1.22]
[0.71]
0.048
0.028
1
45°
EMITTER
[1.17]
[0.91]
0.046
0.036
1
2
E
B
3 LEADS
0.230Ø (5.84)
0.209Ø (5.31)
0.195Ø (4.95)
0.178Ø (4.52)
0.021Ø [0.53]
0.016Ø [0.41]
0.030 [0.76)] MAX
0.210 [5.33]
[4.32]
0.500Ø ([12.70] MAX
0.750Ø [19.05] MIN
0.170
DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
61096
SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222A)
OPTICAL/ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER
Collector-Base Breakdown Voltage
SYMBOL
MIN
75
MAX
UNITS
TEST CONDITIONS
NOTE
V
BV
I = 10µA, I = 0
C E
CBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
50
6
V
V
BV
I
= 10mA, I = 0µA
CEO
EBO
C
B
BV
I = 0, I = 10µA
C E
10
10
50
10
nA
I
V = 60V, I = 0
CB E
CBO
µA
nA
nA
V
CB
= 60V, I = 0, T = 150°C
E
A
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
I
V
CE
= 50V
CES
I
V = 4.0V, I = 0
EB C
EBO
50
-
h
fe1
V = 10V, I = 0.1mA
CE C
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
75
100
100
30
325
300
-
-
-
-
-
V
= 10V, I = 1mA
C
CE
V
CE
= 10V, I = 10mA
C
1
1
V
= 10V, I = 150mA
C
CE
CE
V
= 10V, I = 500mA
C
35
V
CE
= 10V, I = 1mA @ -55°C
C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.30
V
1
V
I
= 150mA, I = 15mA
B
CE (SAT)
C
1.0
V
V
1
1
I
= 500, I = 50mA
B
C
0.6
1.20
V
I
I
= 150mA, I = 15mA
B
BE (SAT)
C
2.0
V
1
= 500mA, I = 50mA
C
E
SMALL-SIGNAL CHARACTERISTICS
Small Signal Forward Current Transfer Ratio
50
-
-
h
h
V = 10V, I = 1mA, f = 1kHz
CE C
fe
Small Signal Forward Current Transfer Ratio
2.5
V
CE
= 20V, I =20mA,
C
fe
f = 100kHz
Open Circuit Output Capacitance
Input Capacitance (Output Open Capacitance)
Turn-On Time
8
pF
pF
ns
C
V
= 10V, 100kHz, < f < 1 MHz
= 0.5 V, 100kHz, < f < 1 MHz
OBO
CB
25
35
C
V
EB
IBO
t
V = 30V, I = 150mA,
CC C
on
I
B1
= 15mA
Turn-Off Time
300
ns
t
off
V
CC
I
= 30V, I = 150mA,
C
= I = 15mA
B2
B1
NOTES:
1.
Pulse width < 300µs, duty cycle < 2.0%.
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
10
5
MAX
150
20
UNITS
mA
Bias Voltage-Collector/Emitter
Collector-Emitter Voltage
I
C
V
CE
V
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
61096-001
61096-002
61096-101
61096-102
61096-103
2N2222A PNP transistor, commercial version
2N2222A PNP transistor, JAN level screening
2N2222A PNP transistor, JANTX level screening
2N2222A PNP transistor, JANTXV level screening
2N2222A PNP transistor, JANS level screening
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
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