WMF128K8-120CLS5A [MICROSEMI]
Flash, 128KX8, 120ns, CQCC32, CERAMIC, LCC-32;
| 型号： | WMF128K8-120CLS5A |
| 厂家： | 
Microsemi |
| 描述： | Flash, 128KX8, 120ns, CQCC32, CERAMIC, LCC-32 |
| 文件： | 总14页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WMF128K8-XXX5
HI-RELIABILITY PRODUCT
128Kx8 MONOLITHIC FLASH, SMD 5962-96690
FEATURES
■ Organized as 128Kx8
■ Access Times of 50*, 60, 70, 90, 120, 150ns
■ Commercial, Industrial and Military Temperature Ranges
■ 5 Volt Programming. 5V ± 10% Supply.
■ Low Power CMOS
■ Packaging
• 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
• 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300)
• 32 lead, Flatpack (Package 220)
• 32 lead, Formed Flatpack (Package 221)
• 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
■ Embedded Erase and Program Algorithms
■ TTL Compatible Inputs and CMOS Outputs
■ Page Program Operation and Internal Program Control Time.
■ 100,000 Erase/Program Cycles Minimum
Note: For programming information refer to Flash Programming 1M5
Application Note.
■ Sector Erase Architecture
• 8 equal size sectors of 16KBytes each
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
* The access time of 50ns is only available in Industrial and Commercial
temperature ranges only.
PIN CONFIGURATION FOR WMF128K8-XCLX5
PIN CONFIGURATION FOR WMF128K8-XXX5
32 DIP
32 CSOJ
32 FLATPACK
32 CLCC
TOP VIEW
TOP VIEW
NC
A16
A15
A12
A7
1
32
VCC
2
31 WE
30 NC
29 A14
28 A13
27 A8
4
3 2 1 32 31 30
3
5
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
A14
A13
A8
4
6
5
7
A6
6
A5
7
26 A9
8
A9
A4
8
25 A11
24 OE
23 A10
22 CS
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
9
A11
OE
A10
CS
A3
9
10
11
12
13
A2
10
11
12
13
14
15
16
A1
A0
I/O
0
I/O7
I/O0
I/O1
I/O2
14 15 16 17 18 19 20
V
SS
PIN DESCRIPTION
A0-16
I/O0-7
CS
Address Inputs
Data Input/Output
Chip Select
OE
Output Enable
Write Enable
+5.0V Power
Ground
WE
VCC
VSS
1
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
June 1999 Rev. 3
WMF128K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VCC
VIH
VIL
Min
4.5
Max
5.5
Unit
V
Parameter
Unit
°C
Supply Voltage
Operating Temperature
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A9 Voltage for Sector Protect
2.0
VCC + 0.3
+0.8
V
Supply Voltage Range (VCC)
V
-0.5
-55
-40
11.5
V
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
V
TA
+125
+85
°C
°C
V
°C
TA
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
°C
VID
12.5
10
years
cycles
V
Endurance (write/erase cycles) Mil Temp
A9 Voltage for sector protect (VID) (3)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is VCC + 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
10,000 min.
-2.0 to +14.0
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
CAD
Conditions
Max Unit
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
V
I/O = 0 V, f = 1.0 MHz 15
pF
pF
pF
pF
pF
COE
V
IN = 0 V, f = 1.0 MHz
IN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
15
15
15
CWE
V
CCS
CI/O
VI/O = 0 V, f = 1.0 MHz 15
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
ILO
VCC = 5.5, VIN = GND to VCC
VCC = 5.5, VIN = GND to VCC
CS = VIL, OE = VIH
10
10
35
50
µA
µA
Output Leakage Current
VCC Active Current for Read (1)
ICC1
ICC2
mA
mA
VCC Active Current for Program
or Erase (2)
CS = VIL, OE = VIH
VCC Standby Current
Output Low Voltage
ICC3
VOL
VCC = 5.5, CS = VIH, f = 5MHz
IOL =12.0 mA, VCC = 4.5
1.6
mA
V
0.45
Output High Voltage
Output High Voltage
Low VCC Lock Out Voltage
VOH1
VOH2
VLKO
IOH = -2.5 mA, VCC = 4.5
0.85 x VCC
VCC - 0.4
3.2
V
V
V
IOH = -100 µA, VCC = 4.5
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
AC TEST CIRCUIT
AC TEST CONDITIONS
IOL
Parameter
Typ
Unit
V
Current Source
Input Pulse Levels
VIL = 0, VIH = 3.0
Input Rise and Fall
5
ns
V
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
D.U.T.
VZ ≈ 1.5V
V
(Bipolar Supply)
Ceff = 50 pf
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOH
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Current Source
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
2
WMF128K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
-50
-60
-70
-90
-120
-150
Unit
Min
50
0
Max Min Max Min Max Min Max Min
Max Min Max
Write Cycle Time
tAVAV tWC
tELWL tCS
tWLWH tWP
tAVWL tAS
tDVWH tDS
tWHDX tDH
tWLAX tAH
tWHEH tCH
tWHWL tWPH
60
0
70
0
90
0
120
0
150
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
µs
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
25
0
30
0
35
0
45
0
50
0
50
0
25
0
30
0
30
0
45
0
50
0
50
0
Data Hold Time
Address Hold Time
40
0
45
0
45
0
45
0
50
0
50
0
Chip Select Hold Time
Write Enable Pulse Width High
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
Duration of Byte Programming Operation (min) tWHWH1
Sector Erase Time
tWHWH2
tGHWL
60
60
60
60
60
2.2
0
60
Read Recovery Time Before Write
VCC Setup Time
tVCS
50
50
50
50
50
50
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (1)
1. For Toggle and Data Polling.
12.5
12.5
12.5
12.5
12.5
12.5 sec
tOES
0
0
0
0
0
0
ns
ns
tOEH
10
10
10
10
10
10
AC CHARACTERISTICS – READ ONLY OPERATIONS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
-50
Min Max Min Max
50 60
-60
-70
Min Max Min Max Min Max Min Max
70 90 120 150
-90
-120
-150
Unit
Read Cycle Time
tAVAV
tRC
tACC
tCE
tOE
tDF
tDF
tOH
ns
ns
ns
ns
ns
ns
ns
Address Access Time
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
50
50
25
20
20
60
60
30
20
20
70
70
35
20
20
90
90
40
25
25
120
120
50
150
150
55
Chip Select Access Time
OE to Output Valid
Chip Select to Output High Z (1)
OE High to Output High Z (1)
30
35
30
35
Output Hold from Address, CS or OE Change,
whichever is first
0
0
0
0
0
0
1. Guaranteed by design, not tested.
3
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMF128K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS CONTROLLED
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
-50
Min Max
50
-60
-70
-90
-120
-150
Unit
Min Max Min Max Min Max
Min Max Min Max
Write Cycle Time
tAVAV
tWC
tWS
tCP
60
0
70
0
90
0
120
0
150
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
sec
WE Setup Time
tWLEL
tELEH
0
25
0
CS Pulse Width
30
0
35
0
45
0
50
0
50
0
Address Setup Time
Data Setup Time
tAVEL
tAS
tDVEH
tEHDX
tELAX
tDS
25
0
30
0
30
0
45
0
50
0
50
0
Data Hold Time
tDH
tAH
tWH
tCPH
Address Hold Time
40
0
45
0
45
0
45
0
50
0
50
0
WE Hold from WE High
CS Pulse Width High
Duration of Programming Operation
Duration of Erase Operation
Read Recovery before Write
Chip Programming Time
tEHWH
tEHEL
20
14
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
tWHWH1
tWHWH2
tGHEL
2.2
0
60
60
60
60
60
60
12.5
12.5
12.5
12.5
12.5
12.5
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
4
WMF128K8-XXX5
AC WAVEFORMS FOR READ OPERATIONS
5
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMF128K8-XXX5
WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED
NOTES:
1. PA is the address of the memory location
to be programmed.
2. PD is the data to be programmed at byte address.
3. I/O7 is the output of the complement of the
data written to the device.
4. I/OOUT is the output of the data written to
the device.
5. Figure indicates last two bus cycles of four bus
cycle sequence.
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
6
WMF128K8-XXX5
AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
NOTES:
1. SA is the sector address
for Sector Erase.
7
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMF128K8-XXX5
AC WAVEFORMS FOR DATA POLLING DURING
EMBEDDED ALGORITHM OPERATIONS
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
8
WMF128K8-XXX5
WRITE/ERASE/PROGRAM OPERATION, CS CONTROLLED
NOTES:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. I/O7 is the output of the complement of the data written to the device.
4. I/OOUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
9
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMF128K8-XXX5
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) ± 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
± 0.05 (0.002)
11.3 (0.446)
± 0.2 (0.009)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 220: 32 LEAD, CERAMIC FLATPACK
20.83 (0.820)
± 0.25 (0.010)
PIN 1
IDENTIFIER
2.60 (0.102) MAX
10.41 (0.410)
± 0.13 (0.005)
10.16 (0.400)
± 0.51 (0.020)
0.43 (0.017)
± 0.05 (0.002)
1.27 (0.050) TYP
19.05 (0.750) TYP
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
10
WMF128K8-XXX5
PACKAGE 221: 32 LEAD, FORMED CERAMIC FLATPACK
3.35 (0.132)
MAX
20.83 (0.820)
± 0.25 (0.010)
0.15 (0.006)
1.27 (0.050) TYP
TYP
10.41 (0.410)
± 0.13 (0.005)
13.47 (0.530)
± 0.13 (0.005)
+
+
0.43 (0.017)
± 0.05 (0.002)
1.27 (0.050) TYP
19.05 (0.750) TYP
0.63 (0.025) TYP
0° / -4°
1.52 (0.060) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) ± 0.4 (0.016)
15.04 (0.592)
± 0.3 (0.012)
4.34 (0.171) ± 0.79 (0.031)
3.2 (0.125) MIN
PIN 1 IDENTIFIER
0.25 (0.010)
± 0.05 (0.002)
0.84 (0.033)
± 0.4 (0.014)
15.25 (0.600)
2.5 (0.100)
TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
± 0.25 (0.010)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
11
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMF128K8-XXX5
PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER
7.62 (0.300) TYP
3.81
(0.150) TYP
5.08
(0.200)
TYP
0.56 (0.022)
0.71 (0.028)
10.16
(0.400)
TYP
PIN 1
0.38 (0.015) x 45°
PIN 1 IDENTIFIER
11.25 (0.443)
14.15 (0.457)
1.63 (0.064)
2.54 (0.100)
13.79 (0.543)
14.15 (0.557)
1.02 (0.040) x 45°
3 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
12
WMF128K8-XXX5
ORDERING INFORMATION
W M F 128K8 X - XXX X X 5 X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
VPP PROGRAMMING VOLTAGE
5 = 5V
DEVICE GRADE:
S = SMD
M = Military Screened
= Industrial
-55°C to +125°C
I
-40°C to +85°C
0°C to +70°C
C = Commercial
PACKAGE TYPE:
DE = 32 Lead Ceramic SOJ (Package 101)
C = 32 Pin Ceramic DIP (Package 300)
FE = 32 Lead Ceramic Flatpack (Package 220)
FF = 32 Lead Formed Ceramic Flatpack (Package 221)
CL = 32 Pin rectangular Ceramic Leadless Chip Carrier (Package 601)
ACCESS TIME (ns)
IMPROVEMENT MARK
ORGANIZATION, 128K x 8
Flash PROM
MONOLITHIC
WHITE MICROELECTRONICS
13
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMF128K8-XXX5
DEVICE TYPE
SECTOR SIZE
SPEED
PACKAGE
SMD NO.
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
16KByte
16KByte
16KByte
16KByte
16KByte
150ns
120ns
90ns
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
5962-96690 01HYX
5962-96690 02HYX
5962-96690 03HYX
5962-96690 04HYX
5962-96690 05HYX
70ns
60ns
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
16KByte
16KByte
16KByte
16KByte
16KByte
150ns
120ns
90ns
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
5962-96690 01HXX
5962-96690 02HXX
5962-96690 03HXX
5962-96690 04HXX
5962-96690 05HXX
70ns
60ns
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
16KByte
16KByte
16KByte
16KByte
16KByte
150ns
120ns
90ns
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
5962-96690 01HTX
5962-96690 02HTX
5962-96690 03HTX
5962-96690 04HTX
5962-96690 05HTX
70ns
60ns
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
16KByte
16KByte
16KByte
16KByte
16KByte
150ns
120ns
90ns
32 lead Formed Flatpack (FF)
32 lead Formed Flatpack (FF)
32 lead Formed Flatpack (FF)
32 lead Formed Flatpack (FF)
32 lead Formed Flatpack (FF)
5962-96690 01HUX
5962-96690 02HUX
5962-96690 03HUX
5962-96690 04HUX
5962-96690 05HUX
70ns
60ns
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
14
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