WMF128K8-120DEC5A [MERCURY]
Flash,;
| 型号： | WMF128K8-120DEC5A |
| 厂家： | 
MERCURY UNITED ELECTRONICS INC |
| 描述： | Flash, CD 内存集成电路 |
| 文件： | 总9页 (文件大小：606K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
128Kx8 MONOLITHIC NOR FLASH
SMD 5962-96690**
WMF128K8-XXX5
FEATURES
Access Times of 50*, 60, 70, 90, 120, 150ns
Commercial, Industrial and Military Temperature Ranges
5 Volt Programming
Packaging
• 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
• 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300)
• 32 lead, Flatpack (Package 220)
Low Power CMOS
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
• 32 lead, Formed Flatpack (Package 221)
Page Program Operation and Internal Program Control
• 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
Time.
This product is subject to change without notice.
100,000 Erase/Program Cycles Minimum
Sector Erase Architecture
Note: For programming information and waveforms refer to Flash Programming 1M5 Application
Note AN0036.
• 8 equal size sectors of 16KBytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
* The access time of 50ns is available in Industrial and Commercial temperature ranges only.
** For reference only. See table page 8.
Organized as 128Kx8
PIN CONFIGURATION FOR WMF128K8-XXX5
PIN CONFIGURATION FOR WMF128K8-XCLX5
32 DIP
32 CSOJ
32 Flatpack
32 CLCC
Top View
Top View
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
1
2
3
4
5
6
7
8
32
VCC
31 WE#
30 NC
29 A14
28 A13
27 A8
4 3 2 1 32 31 30
5
6
7
8
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
26 A9
A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
9
A11
OE#
A10
CS#
I/O7
9
10
11
12
13
10
11
12
13
14
15
16
14 15 16 17 18 19 20
V
SS
PIN DESCRIPTION
A0-16
I/O0-7
CS#
OE#
WE#
VCC
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
VSS
1
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4325.11E-0816-ss-WMF128K8-XXX5
WMF128K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
RECOMMENDED OPERATING CONDITIONS
Parameter
Operating Temperature (Mil, Q)
Supply Voltage (VCC
Unit
°C
Parameter
Symbol
VCC
TA
Min
4.5
-55
-40
0
Max
5.5
Unit
V
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
Supply Voltage
)
V
Operating Temp. (Mil, Q)
Operating Temp. (Ind)
Operating Temp. (Com)
+125
+85
+70
°C
°C
°C
Signal Voltage Range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
V
TA
°C
TA
°C
10
years
cycles
V
Endurance (write/erase cycles)
A9 Voltage for sector protect (VID) (3)
NOTES:
100,000 min
-2.0 to +12.5
CAPACITANCE
TA = +25°C
Parameter
Symbol
CAD
Conditions
Max Unit
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may
overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins
is VCC + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up
to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot
Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may
overshoot to 13.5 V for periods up to 20ns.
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
VI/O = 0 V, f = 1.0 MHz 15
pF
pF
pF
pF
pF
COE
VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
15
15
15
CWE
CCS
CI/O
VI/O = 0 V, f = 1.0 MHz 15
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS — CMOS COMPATIBLE
Parameter
Symbol
ILI
Conditions
Min
Max
10
Unit
Input Leakage Current
Output Leakage Current
VCC = VCC MAX, VIN = GND to VCC
μA
μA
mA
mA
mA
V
ILO
VCC = VCC MAX, VOUT = GND to VCC
CS# = VIL, OE# = VIH, VCC = VCC MAX, f = 5MHz
CS# = VIL, OE# = VIH, VCC = VCC MAX
VCC = VCC MAX, CS# = VCC ± 0.5V, OE# = VIH, f = 5MHz
10
VCC Active Current for Read (1)
VCC Active Current for Program or Erase(2)
VCC Standby Current
ICC1
ICC2
ICC3
VIH
35
50
1.6
Input High Voltage
Input Low Voltage
2.0
-0.5
11.5
VCC + 0.3
+0.8
12.5
0.45
VIL
V
Voltage for Auto Select and Sector Protect
Output Low Voltage
VID
V
VOL
VOH1
VOH2
VLKO
IOL = 8.0 mA, VCC = VCC MIN
IOH = -2.5 mA, VCC = VCC MIN
IOH = -100 μA, VCC = VCC MIN
V
Output High Voltage
Output High Voltage
Low VCC Lock-Out Voltage
NOTES:
0.85 x VCC
VCC - 0.4
3.2
V
V
V
1. The ICC current is typically less than 2mA/MHz, with OE# at VIH
.
2. CC active while Embedded Algorithm (program or erase) is in progress.
I
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
V
Input Pulse Levels
VIL = 0, VIH = 3.0
IOL
Input Rise and Fall
5
ns
V
Current Source
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
V
D.U.T.
Ceff = 50 pf
VZ ≈ 1.5V
(Bipolar Supply)
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
IOH
Current Source
2
4325.11E-0816-ss-WMF128K8-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF128K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE# CONTROLLED
-50
-60
-70
-90
-120
-150
Parameter
Symbol
tAVAV
Unit
Min Max Min Max Min Max Min Max Min Max Min Max
Write Cycle Time
tWC
tCS
tWP
tAS
50
0
60
0
70
0
90
0
120
0
150
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
ns
μs
sec
ns
ns
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
tELWL
tWLWH
tAVWH
tDVWH
tWHDX
tWHAX
tWHEH
tWHWL
tWHWH1
tWHWH2
tGHWL
25
0
30
0
35
0
45
0
50
0
50
0
Data Setup Time
tDS
25
0
30
0
30
0
45
0
50
0
50
0
Data Hold Time
tDH
tAH
tCH
tWPH
Address Hold Time
40
0
45
0
45
0
45
0
50
0
50
0
Chip Select Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (min)
Sector Erase Time
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
60
60
60
60
60
60
Read Recovery Time before Write
VCC Set-up Time
tVCS
50
50
50
50
50
50
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (1)
12.5
12.5
12.5
12.5
12.5
12.5
tOES
tOEH
0
0
0
0
0
0
10
10
10
10
10
10
NOTES:
1. For Toggle and Data# Polling.
AC CHARACTERISTICS – READ ONLY OPERATIONS
-50
Min Max Min Max Min Max Min Max Min Max Min Max
50 60 70 90 120 150
-60
-70
-90
-120
-150
Parameter
Symbol
tAVAV
Unit
Read Cycle Time
tRC
tACC
tCE
tOE
tDF
ns
ns
ns
ns
ns
ns
ns
Address Access Time
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
50
50
25
20
20
60
60
30
20
20
70
70
35
20
20
90
90
40
25
25
120
120
50
150
150
55
Chip Select Access Time
OE# to Output Valid
Chip Select to Output High Z (1)
OE# High to Output High Z (1)
30
35
tDF
30
35
Output Hold from Address, CS# or OE# Change,
whichever is First
tOH
0
0
0
0
0
0
NOTES:
1. Guaranteed by design, but not tested
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
-50
-60
-70
-90
-120
-150
Parameter
Symbol
Unit
Min Max Min Max Min Max Min Max Min Max Min Max
Write Cycle Time
50
0
60
0
70
0
90
0
120
0
150
0
ns
ns
tAVAV
tWLEL
tELEH
tWC
tWS
tCP
WE# Setup Time
CS# Pulse Width
25
0
30
0
35
0
45
0
50
0
50
0
ns
Address Setup Time
Data Setup Time
ns
tAVEL
tAS
25
0
30
0
30
0
45
0
50
0
50
0
ns
tDVEH
tEHDX
tELAX
tDS
Data Hold Time
ns
tDH
tAH
tWH
tCPH
Address Hold Time
40
0
45
0
45
0
45
0
50
0
50
0
ns
WE# Hold from WE# High
CS# Pulse Width High
Duration of Programming Operation
Duration of Erase Operation
Read Recovery before Write
Chip Programming Time
ns
tEHWH
tEHEL
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
20
14
2.2
0
ns
μs
sec
ns
tWHWH1
tWHWH2
tGHEL
60
60
60
60
60
60
12.5
12.5
12.5
12.5
12.5
12.5
sec
3
4325.11E-0816-ss-WMF128K8-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF128K8-XXX5
PACKAGE 101 – 32 LEAD, CERAMIC SOJ
21.1 (0.830) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
10.92 (0.430)
0.13 (0.005)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.05 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 220 – 32 LEAD, CERAMIC FLATPACK
20.83 (0.820)
0.25 (0.010)
PIN 1
IDENTIFIER
2.60 (0.102) MAX
10.41 (0.410)
0.13 (0.005)
10.16 (0.400)
0.51 (0.020)
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
19.05 (0.750) TYP
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
4
4325.11E-0816-ss-WMF128K8-XXX5
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WMF128K8-XXX5
PACKAGE 221 – 32 LEAD, FORMED CERAMIC FLATPACK
ꢀ.ꢀꢁ (0.1ꢀ2)
MAX
20.8ꢀ (0.820)
0.2ꢁ (0.010)
0.127 (0.00ꢁ)
+ 0.0ꢁ (0.002)
- 0.02ꢁ (0.001)
1ꢀ.47 (0.ꢁꢀ0)
0.1ꢀ (0.00ꢁ)
10.41 (0.410)
0.1ꢀ (0.00ꢁ)
+
+
0.4ꢀ (0.017)
1.27 (0.0ꢁ0) TYP
19.0ꢁ (0.7ꢁ0) TYP
0.6ꢀ (0.02ꢁ) TYP
0°/ -4°
0.0ꢁ (0.002)
1.ꢁ2 (0.060) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 300 – 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) 0.4 (0.016)
15.04 (0.592)
0.3 (0.012)
4.34 (0.171)
0.79 (0.031)
PIN 1 IDENTIFIER
3.175 (0.125) MIN
0.25 (0.010)
0.05 (0.002)
0.84 (0.033)
0.4 (0.014)
15.24 (0.600)
0.25 (0.010)
2.54 (0.100)
TYP
1.27 (0.050)
TYP
0.46 (0.018)
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
4325.11E-0816-ss-WMF128K8-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF128K8-XXX5
PACKAGE 601 – 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER
7.62 (0.300) TYP
3.81
(0.150) TYP
1.27 (0.05) TYP
5.08
(0.200)
TYP
0.56 (0.022)
0.71 (0.028)
10.16
(0.400)
TYP
PIN 1
1.14 (0.045)
1.40 (0.055)
0.38 (0.015) x 45°
PIN 1 IDENTIFIER
11.25 (0.443)
11.61 (0.457)
1.63 (0.064)
2.54 (0.100)
13.79 (0.543)
14.15 (0.557)
1.02 (0.040) x 45°
3 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
6
4325.11E-0816-ss-WMF128K8-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF128K8-XXX5
ORDERING INFORMATION
W M F 128K8 - XXX X X 5 X
MERCURY SYSTEMS
MONOLITHIC
NOR FLASH
ORGANIZATION, 128K x 8
ACCESS TIME (ns)
PACKAGE TYPE:
DE = 32 Lead Ceramic SOJ (Package 101)
= 32 Pin Ceramic DIP (Package 300)
C
FE = 32 Lead Ceramic Flatpack (Package 220)
FF = 32 Lead Formed Ceramic Flatpack (Package 221)
CL = 32 Pin rectangular Ceramic Leadless Chip Carrier (Package 601)
DEVICE GRADE:
Q
= Military Grade*
M = Military Screened -55°C to +125°C
I
= Industrial
-40°C to +85°C
0°C to +70°C
C
= Commercial
V
PP PROGRAMMING VOLTAGE
= 5V
5
LEAD FINISH:
Blank = Gold plated leads
A
= Solder dip leads
* This product is processed the same as the 5962-XXXXXHXX product but all test
and mechanical requirements are per the Mercury Systems data sheet.
7
4325.11E-0816-ss-WMF128K8-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF128K8-XXX5
DEVICE TYPE
SECTOR SIZE
SPEED
PACKAGE
SMD NO.
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
16KByte
16KByte
16KByte
16KByte
16KByte
150ns
120ns
90ns
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
5962-96690 01HYX
5962-96690 02HYX
5962-96690 03HYX
5962-96690 04HYX
5962-96690 05HYX
70ns
60ns
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
16KByte
16KByte
16KByte
16KByte
16KByte
150ns
120ns
90ns
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
5962-96690 01HXX
5962-96690 02HXX
5962-96690 03HXX
5962-96690 04HXX
5962-96690 05HXX
70ns
60ns
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
16KByte
16KByte
16KByte
16KByte
16KByte
150ns
120ns
90ns
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
5962-96690 01HTX
5962-96690 02HTX
5962-96690 03HTX
5962-96690 04HTX
5962-96690 05HTX
70ns
60ns
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
128K x 8 Flash Monolithic
16KByte
16KByte
16KByte
16KByte
16KByte
150ns
120ns
90ns
32 lead Formed Flatpack (FF)
32 lead Formed Flatpack (FF)
32 lead Formed Flatpack (FF)
32 lead Formed Flatpack (FF)
32 lead Formed Flatpack (FF)
5962-96690 01HUX
5962-96690 02HUX
5962-96690 03HUX
5962-96690 04HUX
5962-96690 05HUX
70ns
60ns
NOTE: This table is for reference only. For 5962-96690 ordering information and specifications refer to latest SMD document.
8
4325.11E-0816-ss-WMF128K8-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF128K8-XXX5
Document Title
128Kx8 MONOLITHIC NOR FLASH, SMD 5962-96690
Revision History
Rev # History
Release Date Status
Rev 6
Changes (Pg. 1-14)
June 2011
Final
6.1 Change document layout from White Electronic Designs to Microsemi
6.2 Add document Revision History page
Rev 7
Rev 8
Changes (Pg. 1, 14)
August 2011
June 2012
Final
Final
7.1 Add "NOR" to headline
Changes (Pg. 1-14)
8.1 Update features
8.2 Update Absolute Maximum Ratings, Recommended Operating Conditions
and DC Characteristics charts
8.3 Remove subhead line from AC Characteristics charts
8.4 Remove all waveforms diagrams
8.5 Update Package 101 diagram
8.6 Update Package 221 diagram
8.7 Update Package 300 diagram
8.8 Update Package 601 diagram
8.9 Add NOR to Flash option on Ordering Information chart
8.10 Add note to SMD table
Rev 9
Change (Pg. 7)
May 2014
Final
Final
Final
9.1 Changed Device Grade "Q" description from "MIL-STD-883 Compliant" to
"MIL-PRF-38534 Class H Compliant."
Rev 10
Rev 11
Change (Pg. 7)
August 2014
August 2016
10.1 Changed Device Grade "Q" description from "MIL-PRF-38534 Class H
Compliant." to "Military Grade."
Changes (Pg. All) (ECN 10156)
11.1 Change document layout from Microsemi to Mercury Systems
Mercury Systems reserves the right to change products or specifications without notice.
© 2016 Mercury Systems. All rights reserved.
9
4325.11E-0816-ss-WMF128K8-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
相关型号：
WMF128K8-120DES5A
Flash, 128KX8, 120ns, CDSO32, 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-32
MICROSEMI
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