SG1644_1 [MICROSEMI]
DUAL HIGH SPEED DRIVER; 双高速驱动器型号: | SG1644_1 |
厂家: | Microsemi |
描述: | DUAL HIGH SPEED DRIVER |
文件: | 总8页 (文件大小:246K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SG1644/SG2644/SG3644
DUAL HIGH SPEED DRIVER
DESCRIPTION
FEATURES
The SG1644, 2644, 3644 is a dual non-inverting monolithic high
speed driver. This device utilizes high voltage Schottky logic to
convert TTL signals to high speed outputs up to 18V. The totem
poleoutputshave3Apeakcurrentcapability, whichenablesthem
to drive 1000pF loads in typically less than 25ns. These speeds
make it ideal for driving power MOSFETs and other large capaci-
tive loads requiring high speed switching.
• Totem pole outputs with 3.0A peak current
capability.
• Supply voltage to 22V.
• Rise and fall times less than 25ns.
• Propagation delays less than 20ns.
• Non-inverting high-speed high-voltage Schottky
logic.
• Efficient operation at high frequency.
Inadditiontothestandardpackages,SiliconGeneraloffersthe16
pin S.O.I.C. (DW-package) for commercial and industrial applica-
tions, and the Hermetic TO-66 (R-package) for military use.
These packages offer improved thermal performance for applica-
tions requiring high frequencies and/or high peak currents.
• Available in:
8 Pin Plastic and Ceramic DIP
14 Pin Ceramic DIP
16 Pin Plastic S.O.I.C.
20 Pin LCC
TO-99
TO-66
HIGH RELIABILITY FEATURES - SG1644
♦ Available to MIL-STD-883
♦ Radiation data available
♦ LMI level "S" processing available
EQUIVALENT CIRCUIT SCHEMATIC
VCC
6.5V
VREG
3K
3K
2.5K
INV. INPUT
OUTPUT
LOGIC
GND
POWER
GND
(Substrate)
Rev 1.2a 3/18/2005
Microsemi Inc.
Copyright 1997
11861 Western Avenue ∞ Garden Grove, CA 92841
1
(714) 898-8121 ∞ FAX: (714) 893-2570
SG1644/SG2644/SG3644
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage (VCC) ........................................................... 22V
Logic Input Voltage ............................................................... 7V
Source/Sink Output Current (Each Output)
Continuous ................................................................... ±0.5A
Pulse, 500ns ................................................................ ±3.0A
Operating Junction Temperature
Hermetic (J, T, Y, R-Packages) ....................................150°C
150°C
Plastic (M, DW, L-Packages) ......................................
Storage Temperature Range ............................ -65°C to 150°C
300°C
Lead Temperature (Soldering, 10 Seconds) ..................
Note 1. Exceeding these ratings could cause damage to the device. All voltages are with respect to ground. All currents are positive into the
specified terminal.
RoHS Peak Package Solder Reflow Temp. (40 sec. max. exp.).... 260°C (+0, -5)
THERMAL DATA
J Package:
R Package:
Thermal Resistance-Junction to Case, θJC .................. 30°C/W
Thermal Resistance-Junction to Ambient, θJA ............... 80°C/W
Y Package:
Thermal Resistance-Junction to Case, θJC .................. 50°C/W
Thermal Resistance-Junction to Ambient, θJA ............. 130°C/W
M Package:
Thermal Resistance-Junction to Case, θJC ................. 5.0°C/W
Thermal Resistance-Junction to Ambient, θJA .............. 40°C/W
L Package:
Thermal Resistance-Junction to Case, θJC .................. 35°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 120°C/W
Thermal Resistance-Junction to Case, θJC .................. 60°C/W
Thermal Resistance-Junction to Ambient, θJA .............. 95°C/W
DW Package:
Thermal Resistance-Junction to Case, θJC .................. 40°C/W
Thermal Resistance-Junction to Ambient, θJA ............... 95°C/W
T Package:
Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).
Note B. The above numbers forθJC aremaximumsforthelimitingthermal
resistance of the package in a standard mounting configuration.
The θJA numbers are meant to be guidelines for the thermal
performance of the device/pc-board system. All of the above
assume no ambient airflow.
Thermal Resistance-Junction to Case, θJC .................. 25°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 130°C/W
RECOMMENDED OPERATING CONDITIONS (Note 2)
Supply Voltage (VCC) .................................. 4.5V to 20V (Note 3)
Frequency Range ............................................... DC to 1.5MHz
Peak Pulse Current ............................................................ ±3A
Logic Input Voltage ................................................. -0.5 to 5.5V
Operating Ambient Temperature Range (TA)
SG1644 ......................................................... -55°C to 125°C
SG2644 ........................................................... -25°C to 85°C
SG3644 ............................................................... 0°C to 70°C
Note 2. Range over which the device is functional.
Note 3. AC performance has been optimized for VCC = 8V to 20V.
ELECTRICAL CHARACTERISTICS
(Unlessotherwisespecified, thesespecfiicationsapplyovertheoperatingambienttemperaturesforSG1644with-55°C≤ TA ≤ 125°C, SG2644with-25°C
≤ TA ≤ 85°C, SG3644 with 0°C ≤ TA ≤ 70°C, and VCC = 20V. Low duty cycle pulse testing techniques are used which maintains junction and case
temperatures equal to the ambient temperature.)
SG1644/2644/3644
Min. Typ. Max.
Parameter
Static Characteristics
Test Conditions
Units
Logic 1 Input Voltage
Logic 0 Input Voltage
Input High Current
Input High Current
Input Low Current
2.0
V
V
µA
mA
mA
V
V
V
mA
mA
0.7
500
1.0
VIN = 2.4V
VIN = 5.5V
VIN = 0V
-4
Input Clamp Voltage
IIN = -10mA
-1.5
VCC-3
1.0
Output High Voltage (Note 4)
Output Low Voltage (Note 4)
Supply Current Outputs Low
Supply Current Outputs High
IOUT = -200mA
IOUT = 200mA
18
7.5
VIN = 0V (both inputs)
VIN = 2.4V (both inputs)
27
12
Note 4. VCC = 10V to 20V.
Rev 1.2a
Copyright 1997
11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570
2
∞
SG1644/SG2644/SG3644
ELECTRICAL CHARACTERISTICS (continued)
SG1644/2644/3644
SG1644
TA=-55°C to 125°C
TA= 25°C
Parameter
Test Conditions (Figure 1)
Units
Min. Typ. Max. Min. Typ. Max.
Dynamic Characteristics (Note 6)
Propagation Delay High-Low
(TPHL)
Propagation Delay Low-High
(TPLH)
CL = 1000pF (Note 5)
CL = 2500pF
CL = 1000pF (Note 5)
CL = 2500pF
CL = 1000pF (Note 5)
CL = 2500pF
CL = 1000pF (Note 5)
CL = 2500pF
CL = 2500pF, Freq. = 200KHz
Duty Cycle = 50%
30
35
25
30
30
40
25
40
35
40
50
30
40
35
50
30
50
40
ns
ns
ns
ns
ns
ns
ns
ns
mA
26
18
30
Rise Time (TTLH)
Fall Time (TTHL)
30
30
Supply Current (ICC)
(both outputs)
Note 5. These parameters, specified at 1000pF, although guaranteed over recommended operating conditions, are not tested in production.
Note 6. VCC = 15V.
AC TEST CIRCUIT AND SWITCHING TIME WAVEFORMS - FIGURE 1
CHARACTERISTIC CURVES
FIGURE 2.
FIGURE 4.
FIGURE 3.
TRANSITION TIMES VS. SUPPLY VOLTAGE
TRANSITION TIMES VS. AMBIENT TEMPERATURE
PROPAGATION DELAY VS. SUPPLY VOLTAGE
Rev 1.2a
Copyright 1997
11861 Western Avenue ∞ Garden Grove, CA 92841
3
(714) 898-8121 ∞ FAX: (714) 893-2570
SG1644/SG2644/SG3644
CHARACTERISTIC CURVES (continued)
FIGURE 5.
FIGURE 6.
FIGURE 7.
PROPAGATION DELAY VS. AMBIENT TEMPERATURE
TRANSITION TIMES VS. CAPACITIVE LOAD
SUPPLY CURRENT VS. CAPACITANCE LOAD
FIGURE 8.
FIGURE 9.
FIGURE 10.
HIGH SIDE SATURATION VS. OUTPUT CURRENT
LOW SIDE SATURATION VS. OUTPUT CURRENT
SUPPLY CURRENT VS. FREQUENCY
FIGURE 11.
SUPPLY CURRENT VS. FREQUENCY
Rev 1.2a
Copyright 1997
11861 Western Avenue ∞ Garden Grove, CA 92841
4
(714) 898-8121 ∞ FAX: (714) 893-2570
SG1644/SG2644/SG3644
APPLICATION INFORMATION
POWER DISSIPATION
tantalum capacitor for energy storage. In military applications, a
CK05 or CK06 ceramic operator with a CSR-13 tantalum capaci-
tor is an effective combination. For commercial applications, any
low-inductance ceramic disk capacitor teamed with a Sprague
150D or equivalent low ESR capacitor will work well. The
capacitors must be located as close as physically possible to the
VCC pin, with combined lead and pc board trace lengths held to
less than 0.5 inches.
The SG1644, while more energy-efficient than earlier gold-doped
driver IC’s, can still dissipate considerable power because of its
high peak current capability at high frequencies. Total power
dissipation in any specific application will be the sum of the DC or
steady-state power dissipation, and the AC dissipation caused by
driving capacitive loads.
The DC power dissipation is given by:
PDC = +VCC · ICC [1]
GROUNDING CONSIDERATIONS
The ability of the SG1644 to deliver high peak currents into
capacitive loads can cause undesirable negative transients on
the logic and power grounds. To avoid this, a low inductance
ground path should be considered for each output to return the
high peak currents back to it’s own ground point. A ground plane
is recommended for best performance. If space for a ground
plane is not available, make the paths as short and as wide as
possible. The logic ground can be returned to the supply bypass
capacitor and be connected at one point to the power grounds.
where ICC is a function of the driver state, and hence is duty-cycle
dependent.
The AC power dissipation is proportional to the switching fre-
quency, the load capacitance, and the square of the output
voltage. In most applications, the driver is constantly changing
state, and the AC contribution becomes dominant when the
frequency exceeds 100-200KHz.
LOGIC INTERFACE
The SG1644 driver family is available in a variety of packages to
accommodateawiderangeofoperatingtemperaturesandpower
dissipation requirements. The Absolute Maximums section of the
data sheet includes two graphs to aid the designer in choosing an
appropriate package for his design.
The logic input of the 1644 is designed to accept standard DC-
coupled5voltlogicswings, withnospeed-upcapacitorsrequired.
If the input signal voltage exceeds 6 volts, the input pin must be
protected against the excessive voltage in the HIGH state. Either
a high speed blocking diode must be used, or a resistive divider
to attenuate the logic swing is necessary.
The designer should first determine the actual power dissipation
of the driver by referring to the curves in the data sheet relating
operating current to supply voltage, switching frequency, and
capacitiveload. Thesecurvesweregeneratedfromdatatakenon
actual devices. The designer can then refer to the Absolute
Maximum Thermal Dissipation curves to choose a package type,
and to determine if heat-sinking is required.
LAYOUT FOR HIGH SPEED
The SG1644 can generate relatively large voltage excursions
with rise and fall times around 20-30 nanoseconds with light
capacitive loads. A Fourier analysis of these time domain signals
will indicate strong energy components at frequencies much
higher than the basic switching frequency. These high frequen-
cies can induce ringing on an otherwise ideal pulse if sufficient
inductance occurs in the signal path (either the positive signal
trace or the ground return). Overshoot on the rising edge is
DESIGN EXAMPLE
Given:Two2500pFloadsmustbedrivenpush-pullfroma+15volt
supply at 100KHz. The application is a commercial one in which
the maximum ambient temperature is +50°C, and cost is impor-
tant.
undesirable
because the excess drive voltage could rupture
the gate oxide of a power MOSFET. Trailing edge undershoot is
dangerous because the negative voltage excursion can forward-
bias the parasitic PN substrate diode of the driver, potentially
causing erratic operation or outright failure.
1. From Figure 11, the average driver current consumption
under these conditions will be 18mA, and the power dissipation
will be 15volts x 18mA, or 270mW.
Ringing can be reduced or eliminated by minimizing signal path
inductance, and by using a damping resistor between the drive
output and the capacitive load. Inductance can be reduced by
keeping trace lengths short, trace widths wide, and by using 2oz.
copper if possible. The resistor value for critical damping can be
calculated from:
2. From the ambient thermal characteristic curve, it can be seen
that the M package, which is an 8-pin plastic DIP with a copper
lead frame, has more than enough thermal conductance from
junction to ambient to support operation at an ambient tempera-
ture of +50°C. The SG36446M driver would be specified for this
application.
RD = 2√L/CL [2]
SUPPLY BYPASSING
where L is the total signal line inductance, and CL is the load
capacitance. Values between 10 and 100ohms are usually
sufficient. Inexpensive carbon composition resistors are best
because they have excellent high frequency characteristics.
They should be located as close as possible to the gate terminal
of the power MOSFET.
Since the SG1644 can deliver peak currents above 3amps under
some load conditions, adequate supply bypassing is essential for
proper operation. Two capacitors in parallel are recommended to
guarantee low supply impedance over a wide bandwidth: a 0.1µF
ceramic disk capacitor for high frequencies, and a 4.7µF solid
Rev 1.2a
Copyright 1997
11861 Western Avenue ∞ Garden Grove, CA 92841
5
(714) 898-8121 ∞ FAX: (714) 893-2570
SG1644/SG2644/SG3644
TYPICAL APPLICATIONS
FIGURE 12.
In this push pull converter circuit, the control capailities of the SG1524B PWM are combined with the powerful totem-pole drivers
found in the SG1644 (see SG1626 for example). This inexpensive configuration results in very fast charge and discharge of the
power MOSFET gate capacitance for efficient switching.
FIGURE 13.
When the peak current capabilites of PWM's such as 1525A or 1526B are not sufficient to drive high capacitive loads fast enough,
SG1644 is one solution to this problem. This combination is especially suited for full bridge applications where high input
capacitance MOSFETs are being used. Diodes D1 and D2 are necessary if the leakage inductance of the drive transformer will
drive the output pins negative.
Rev 1.2a
Copyright 1997
11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570
6
∞
SG1644/SG2644/SG3644
TYPICAL APPLICATIONS (continued)
FIGURE 14.
A low cost, yet powerful alternative to the single ended converters with parallel MOSFETs is a combination of SG1842 and SG1644
as shown in Figure 16. This combination will also allow a low noise operation by separating the drive and its associated high peak
currents, away from the PWM logic section.
FIGURE 16.
FIGURE 15.
WhentheinputsaredrivenwithaTTLsquarewavedrive, the
high peak current capabilites of SG1644 allow easy implem-
entation of charge pump voltage converters.
Fast turn off of bipolar transistors is possible by the totem
poseoutputstageofSG1644. ThechargeoncapacitorCwill
drive the base negative for faster turn off.
Rev 1.2a
Copyright 1997
11861 Western Avenue ∞ Garden Grove, CA 92841
7
(714) 898-8121 ∞ FAX: (714) 893-2570
SG1644/SG2644/SG3644
CONNECTION DIAGRAMS & ORDERING INFORMATION (See Notes Below)
Ambient
Temperature Range
Package
Part No.
Connection Diagram
14-PIN CERAMIC DIP
J - PACKAGE
SG1644J/883B
SG1644J/DESC
SG1644J
SG2644J
SG3644J
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-25°C to 85°C
0°C to 70°C
N.C.
1
14
13
12
11
10
9
VCC
2
3
N.C.
N.C.
OUT A
OUT B
PWR GND B
IN B
4
5
6
PWR GND A
IN A
N.C.
N.C.
7
8
LOGIC GND
N.C.
8-PIN CERAMIC DIP
Y - PACKAGE
SG1644Y/883B
SG1644Y/DESC
SG1644Y
SG2644Y
SG3644Y
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-25°C to 85°C
0°C to 70°C
8
1
2
3
4
IN A
OUT A
VCC
7
6
5
PWR GND A
PWR GND B
IN B
LOGIC GND
OUT B
8-PIN PLASTIC DIP
M - PACKAGE
SG2644M
SG3644M
-25°C to 85°C
0°C to 70°C
M Package: RoHS Compliant / Pb-free Transition DC: 0503
M Package: RoHS / Pb-free 100% Matte Tin Lead Finish
16-PIN WIDE BODY
PLASTIC S.O.I.C.
DW - PACKAGE
SG2644DW
SG3644DW
-25°C to 85°C
0°C to 70°C
16
PWR GND A
OUT A
1
2
3
N.C.
IN A
15
14
13
12
VCC
N.C.
GROUND
GROUND
N.C.
4
5
6
7
GROUND
GROUND
VCC
11
10
9
IN B
N.C.
OUT B
8
PWR GND B
DW Package: RoHS Compliant / Pb-free Transition DC: 0516
DW Package: RoHS / Pb-free 100% Matte Tin Lead Finish
VCC
8
8-PIN TO-99 METAL CAN
T - PACKAGE
SG1644T/883B
SG1644T/DESC
SG1644T
SG2644T
SG3644T
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-25°C to 85°C
0°C to 70°C
OUT A
2
OUT B
1
7
6
PWR GND B
PWR GND A
3
5
IN B
IN A
4
LOGIC GND
9-PIN TO-66 METAL CAN
R - PACKAGE
SG1644R/883B
SG1644R
SG2644R
-55°C to 125°C
-55°C to 125°C
-25°C to 85°C
0°C to 70°C
VCC
5
N.C.
OUT B
PWR GND B
N.C.
OUT A
PWR GND A
IN A
6
9
4
1
SG3644R
3
2
7
8
IN B
CASE IS LOGIC GROUND
Note: Case and tab are
internally connected to
substrate ground.
(Note 4)
1. N.C.
2. PWR GND A
3. N.C.
4. IN A
5. N.C.
6. LOGIC GND
7. N.C.
8. IN B
3
2
1
20 19
11. N.C.
12. N.C.
13. OUT B
14. N.C.
15. VCC
16. N.C.
17. VCC
18. N.C.
19. OUT A
20. N.C.
20-PIN CERAMIC (LCC)
LEADLESS CHIP CARRIER
L- PACKAGE
SG1644L/883B
SG1644L/DESC
-55°C to 125°C
-55°C to 125°C
4
5
18
17
16
15
14
6
7
8
9. N.C.
10 11 12 13
9
10. PWR GND B
Note 1. Contact factory for JAN and DESC product availablity.
2. All packages are viewed from the top.
Rev 1.2a
Copyright 1997
11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570
8
∞
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